Results 21 to 30 of about 138,900 (317)

Microalgae to Contrast the Climate Change: A Novel Food and Feed Ingredient With Technological Applications

open access: yes, 2023
The overpopulation and the negative impact of conventional crops and livestock on the environment are forcing the introduction in the food market of sustainable alternative ingredients.
D'Auria G., Nitride C., Ferranti P.
core   +1 more source

Nitridation-Etch of Silicon Oxide in Fluorocarbon/Nitrogen Plasma: A Computational Study

open access: yesJournal of Microelectronic Manufacturing, 2019
The continually increasing number of silicon oxide (SiO2) and nitride (Si3N4) layers in 3D-NAND offers both motivations and challenges for developing all-in-one plasma etch solutions for etching SiO2 and Si3N4 at a selectivity near unity while ...
Du Zhang   +3 more
doaj   +1 more source

Color Glass by Layered Nitride Films for Building Integrated Photovoltaic (BIPV) System

open access: yesCrystals, 2021
We investigated layered titanium nitride (TiN) and aluminum nitride (AlN) for color glasses in building integrated photovoltaic (BIPV) systems. AlN and TiN are among suitable and cost-effective optical materials to be used as thin multilayer films, owing
Akpeko Gasonoo   +4 more
doaj   +1 more source

Dissolution Behavior of a Titanium Nitride Sponge in Titanium Alloy Melt [PDF]

open access: yesMATEC Web of Conferences, 2020
The dissolution behaviors of titanium nitride titanium sponges in titanium alloy melt were examined. A titanium nitride sponge was produced using nitrogen gas. The titanium nitride sponge featured a porous structure. Porous structures at both the surface
Mizukami Hideo   +2 more
doaj   +1 more source

Silicon Nitride Etch via Oxidation Reaction in Fluorocarbon/Oxygen Plasma: A First-Principle Study

open access: yesJournal of Microelectronic Manufacturing, 2018
Conducting all-in-one etch process for 3D-NAND fabrication requires close etch rate (E/R) for SiO2 and Si3N4; however, to attain comparable and high etch rate for both materials is challenging.
Yu-Hao Tsai, Du Zhang, Mingmei Wang
doaj   +1 more source

Synthesis of Non-Cubic Nitride Phases of Va-Group Metals (V, Nb, and Ta) from Metal Powders in Stream of NH3 Gas under Concentrated Solar Radiation

open access: yesChemEngineering, 2021
Using a high-flux solar furnace, loosely compacted powders of Va-group transition metal (V, Nb, and Ta) were reacted with stream of NH3 gas (uncracked NH3 gas) being heated by concentrated solar beam to a temperature (T) range between 600 and 1000 °C ...
Nobumitsu Shohoji   +6 more
doaj   +1 more source

Shear Transformation of Austenite in Steels Considering Stresses’ Effects

open access: yesУспехи физики металлов, 2022
The currently known main mechanisms of martensitic transformation of austenite in steel during cooling, physical models, and schemes of shear rearrangement of the iron crystal lattice during γ→α transformation under the action of internal stresses are ...
S. V. Bobyr, E. V. Parusov, G. V. Levchenko, A. Yu. Borisenko, and I. M. Chuiko
doaj   +1 more source

High-Speed and High-Power Ferroelectric Switching Current Measurement Instrument for Materials with Large Coercive Voltage and Remanent Polarization

open access: yesSensors, 2022
A high-speed and high-power current measurement instrument is described for measuring rapid switching of ferroelectric samples with large spontaneous polarization and coercive field. Instrument capabilities (±200 V, 200 mA, and 200 ns order response) are
Keisuke Yazawa   +2 more
doaj   +1 more source

The effects of material combination and surface roughness in lubricated silicon nitride/steel rolling contact fatigue

open access: yes, 2003
Four kinds of commercially finished 12.7 min HIPed silicon nitride bearing balls with surface roughness values R-a ranging from 0.002 to 0.016 mum were tested using a four-ball rolling configuration.
Kang, J   +3 more
core   +1 more source

Numerical Study of Growth Rate and Purge Time in the AlN Pulsed MOCVD Process

open access: yesCrystals, 2022
The relationship between the purge time and the overall growth rate in pulsed injection metal–organic chemical vapor deposition with different V/III ratios is studied by numerical analysis. The transport behavior of TMAl and TMAlNH3 during the process is
Wei-Jie Lin, Jyh-Chen Chen
doaj   +1 more source

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