Results 251 to 260 of about 121,070 (292)
Some of the next articles are maybe not open access.

Aluminium nitride by carbothermal nitridation

Materials Science and Engineering: A, 1989
Abstract The different steps in the preparation of aluminium nitride powder by carbothermal nitridation of alumina are described. The parameters influencing the kinetics of the basic transformation of the oxide are listed and illustrated. The reaction rate depends on the degree of homogeneity of the solid mixture of raw materials or, adversely, is ...
R. Bachelard, P. Joubert
openaire   +1 more source

Niobium nitride/aluminum nitride superlattices

SPIE Proceedings, 1998
ABSTRACT DC reactive magnetron sputtering has been used to prepare niobium nitride/aluminium nitride superconductor/insulatorsuperlattices. Deposition conditions were optimized in order that multilayer fabrication could be achieved by simplecomputer control of the substrate positioning beneath each sputtering target.Transport measurements in the mixed ...
Zoe H. Barber   +4 more
openaire   +1 more source

Reduction‐Nitridation Synthesis of Titanium Nitride Nanocrystals

Journal of the American Ceramic Society, 2003
Titanium nitride (TiN) particles (8 nm) were prepared via a reduction‐nitridation route in an autoclave at 500°C, using TiCl 4 , NH 4 Cl, and metal Na as reactants.
Xiaogang Yang   +4 more
openaire   +1 more source

ELASTIC BEHAVIOUR OF PARTICULATE NITRIDE-NITRIDE OR BORIDE-NITRIDE COMPOSITES

1999
High density refractory AlN-TiN, AlN-TiB2 and TiN-TiB2 composites, as well as the monolithic ceramics : i.e. aluminium nitride AlN, titanium nitride TiN and titanium diboride TiB2 were elabored by Hot Isostatic Pressing.Measurements of the Young's and Shear moduli of these polycrystalline materials were performed at room temperature by an ultrasonic ...
E. Fenard   +4 more
openaire   +1 more source

Boron Nitride Nanomesh

Science, 2004
A highly regular mesh of hexagonal boron nitride with a 3-nanometer periodicity and a 2-nanometer hole size was formed by self-assembly on a Rh(111) single crystalline surface. Two layers of mesh cover the surface uniformly after high-temperature exposure of the clean rhodium surface to borazine (HBNH) 3 .
Martina, Corso   +5 more
openaire   +2 more sources

Boron Nitride Nanotubes

ChemInform, 2007
AbstractChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 200 leading journals. To access a ChemInform Abstract, please click on HTML or PDF.
Golberg, Dmitri   +3 more
openaire   +3 more sources

III-Nitride High Voltage Nitride Electronics

ECS Transactions, 2013
The recent development of low dislocation density Aluminum Nitride (AlN) substrates allows the realization of a new class of majority carrier power devices. Majority carrier devices based on AlxGa1-xN grown on AlN substrates will be able to operate with breakdown voltages in excess of 20KV. A significant challenge to the development of these devices is
Michael Spencer, William Schaff
openaire   +1 more source

Novel Rhenium Nitrides

Physical Review Letters, 2010
We report the synthesis, structure, and properties of novel bulk rhenium nitrides, hexagonal Re2N, and Re3N. Both phases have very high bulk moduli of >400 GPa, similar to the most incompressible binary transition-metal (TM) carbides and nitrides found to date. However, in contrast to other incompressible TM carbides and nitrides, Re3N is better placed
Alexandra, Friedrich   +8 more
openaire   +2 more sources

Boron Nitride Nanotubes

Science, 1995
The successful synthesis of pure boron nitride (BN) nanotubes is reported here. Multi-walled tubes with inner diameters on the order of 1 to 3 nanometers and with lengths up to 200 nanometers were produced in a carbon-free plasma discharge between a BN-packed tungsten rod and a cooled copper electrode.
N G, Chopra   +6 more
openaire   +2 more sources

Titanium nitride-molybdenum metallizing method for aluminium nitride

Proceedings. Japan IEMT Symposium, Sixth IEEE/CHMT International Electronic Manufacturing Technology Symposium, 1990
A paste containing molybdenum (Mo) and titanium nitride (TiN) powders was printed on aluminium nitride (AlN) substrates and fired. The adhesive strength of substrates metallized with Ni/Au plate was about 25 kg/2.5 mm/sup 2/ and was unchanged after a thermal cycle test.
H. Asai   +8 more
openaire   +1 more source

Home - About - Disclaimer - Privacy