Results 71 to 80 of about 11,981 (217)

Effect of annealing on properties of sputtered and nitrogen-implanted ZnO:Ga thin films

open access: yesEPJ Photovoltaics, 2012
Thin films of gallium-doped zinc oxide (ZnO:Ga) were deposited on Corning glass substrates by rf diode sputtering and then implanted with 180 keV nitrogen ions in the dose range of 1 × 1015 ÷ 2 × 1016 cm-2.
Vojs M.   +7 more
doaj   +1 more source

Selective Polarity Control of Metal Oxide Semiconductors for Complementary Logic Gates

open access: yesAdvanced Science, EarlyView.
A scalable electrochemical doping strategy enables in situ p‐to‐n polarity conversion in tin oxide (SnO) thin films using electrolyte gating. Both the pristine p‐type SnO transistor and the electrochemically converted n‐type SnO2 transistor exhibited noticeable and stable electrical performance.
Dong Hyun Park   +6 more
wiley   +1 more source

Effect of combined laser shock peening and nitrogen implantation on the microstructure and tribology of M50 bearing steel

open access: yesJournal of Materials Research and Technology
The M50 bearing steel underwent a combined treatment of laser shock peening (LSP) and nitrogen ion implantation. The microstructure, surface mechanical properties and tribological behaviors were evaluated.
Zhenyang Cao   +7 more
doaj   +1 more source

Interfacial Engineering of Iodine‐Polymer‐Carbon Hybrid Cathodes for High‐Energy Zn//I2 Microbatteries

open access: yesAdvanced Science, EarlyView.
A cathode‐confined iodine strategy employing a synergistic polyaniline/activated‐carbon hybrid enables highly reversible halogen redox chemistry in coplanar Zn//I2 microbatteries. Enhanced iodine utilization, suppressed iodine dissolution, and accelerated charge‐transfer kinetics deliver durable, safe, and integrable microscale energy‐storage devices ...
Yujia Fan   +10 more
wiley   +1 more source

Modification of plasma polymer films by ion implantation

open access: yesMaterials Research, 2004
In this work, thin polymer films were prepared from acetylene and argon radiofrequency (13.56 MHz, 80 W) glow discharges. Post-deposition treatment was performed by plasma immersion ion implantation in nitrogen or helium glow discharges (13.56 MHz, 70 W).
Deborah Cristina Ribeiro dos Santos   +5 more
doaj   +1 more source

A Monolithic Janus Hydrogel Pressure Sensor for Wearable Motion and Physiological Monitoring

open access: yesAdvanced Science, EarlyView.
This work reports a monolithic Janus hydrogel pressure sensor featuring integrated conductive PEDOT and insulating PEGDA layers. The fabricated device achieves a rapid response time, a wide operating range, and good cyclic durability. The sensor demonstrates robust performance in tracking dynamic human joint motions, offering a scalable strategy for ...
Syed Atif Ali   +7 more
wiley   +1 more source

Soft Hypoxia‐Adaptive Bioelectronics Integrating PEDOT:PSS/Polydopamine/Enzyme Biocomposites for Closed‐Loop Therapeutics of Chronic Wounds

open access: yesAdvanced Science, EarlyView.
Hypoxia‐adaptive bioelectronics based on poly(3,4‐ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS)/polydopamine (PDA)/enzyme biocomposites couple O2‐centric biosensing with embedded O2 therapy to address oxygen‐deficient chronic wounds. Local O2 provision restores enzyme‐based metabolite sensing, while catalase‐mediated oxygen generation and
Songrui Liu   +16 more
wiley   +1 more source

Investigation of Implantation-Induced Damage in Indium Phosphide for Layer Transfer Applications [PDF]

open access: yesЖурнал нано- та електронної фізики, 2011
100 keV H+ and He+ ion implantation was performed in 300 µm thick (100) InP substrates at liquid nitrogen temperature with a constant fluence of 1 × 1017 cm–2. The surface morphology of the as-implanted InP samples was studied by optical microscopy.
U. Dadwal   +5 more
doaj  

Photoelectric Imaging of the Optically Inactive Charge State of Silicon‐Vacancy Defects in Diamond

open access: yesAdvanced Science, EarlyView.
Although the doubly negative charge state of the SiV center in diamond is predicted to ionize only in the ultraviolet and is therefore considered optically inaccessible, we demonstrate visible‐range photoelectric imaging enabled by a previously unrecognized regime of laser‐assisted tunneling. ABSTRACT The investigation of optically active point defects
Ilia Chuprina   +8 more
wiley   +1 more source

Toward High‐Resolution Polymeric Neural Interfaces: A Practical Guide for Electron Beam Lithography

open access: yesAdvanced Science, EarlyView.
Electron beam lithography (EBL) enables sub‐micron patterning of polymer‐based neural implants, overcoming the resolution limits of optical lithography. By addressing challenges such as charging, non‐planarity, and substrate heating, it supports higher channel density, improved miniaturization, and better long‐term tissue integration.
Hanna Karlsson‐Fernberg, Maria Asplund
wiley   +1 more source

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