Results 161 to 170 of about 569,184 (264)
Here, we provide the reader with the current state of the art in the fabrication of high‐T2‐coherence diamond, optimized through the use of double electron–electron resonance (DEER) spectroscopy. We reveal the main as well as yet unidentified spin defects, the reduction of which is essential for reducing the spin bath and fabricating materials for ...
Olga Rubinas +6 more
wiley +1 more source
Reduced Gaussian Kernel Filtered-x LMS Algorithm with Historical Error Correction for Nonlinear Active Noise Control. [PDF]
Ku J, Han H, Zhou W, Wang H, Zhang S.
europepmc +1 more source
Incubator-based Sound Attenuation: Active Noise Control In A Simulated Clinical Environment. [PDF]
Hutchinson G, Du L, Ahmad K.
europepmc +1 more source
In situ Auger Electron Spectroscopy resolves oxidation states with high fidelity during the pulsed laser deposition of multivalent perovskite manganate and vanadate heterostructures. The chemical‐state signature is carried by the valence‐electron population of the transition‐metal cation, read out through the relative intensities of Auger fine ...
Harish Kumarasubramanian +1 more
wiley +1 more source
Enhanced nonlinear active noise control: A novel approach using brain storm optimization algorithm. [PDF]
Xie J, Ma J.
europepmc +1 more source
Post-Transcriptional Noise Control. [PDF]
Hansen MMK, Weinberger LS.
europepmc +1 more source
A three‐dimensional magnetic field sensor is realized in chiral W/CoFeB/MgO multilayers, where spin–orbit torques reversibly reconfigure homochiral stripe domains. The symmetry of the torque enables offset‐free in‐plane sensing, while the reproducible domain reconfiguration extends the linear out‐of‐plane range. An anomalous Hall readout delivers large‐
Sabri Koraltan +16 more
wiley +1 more source
Composite metastructure with tunable ultra-wide low-frequency three-dimensional band gaps for vibration and noise control. [PDF]
Pham DB, Huang SC.
europepmc +1 more source
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand +13 more
wiley +1 more source

