Results 71 to 80 of about 582 (118)
Novel Ultra-Sensitive Detectors in the 10–50 μm Wavelength Range
Sensors, 2010 We have developed novel single-photon detectors in the 10–50 μm wavelength region. The detectors are charge-sensitive infrared phototransistors (CSIPs) fabricated in GaAs/AlGaAs double quantum well (QW) structures, in which a photo-generated hole (+e) in
Susumu Komiyama, Takeji Ueda
doaj +1 more source
Unveiling the Potential of Reduced Graphene Oxide in Self‐Powered Photodetectors
ChemPhysChem, Volume 27, Issue 7, 14 April 2026.Self‐powered photodetectors have emerged as advanced devices, gathering significant attention in the field of optoelectronics, particularly for their potential in power‐scarce environments. These devices can detect light and generate an electrical current with minimal or no external power supply.
Bitap Raj Thakuria +3 more
wiley +1 more source
Noise Calculation in nano-channel diodes for Terahertz detectors application
, 2017 International audienceAn analytical calculations of the intrinsic noise and Noise Equivalent Power (NEP) in the InGaAs nanochannel diode are proposed.
Varani, L. +2 more
core +2 more sources
High sensitivity of semimetal photodetection via Bose–Einstein condensation
InfoMatThe discovery of semiconductor has witnessed remarkable strides toward high performance of photodetectors attributed to its excellent carrier properties.
Tuntan Wu +8 more
doaj +1 more source
Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics
Advanced Functional Materials, Volume 36, Issue 27, 2 April 2026.Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha +18 more
wiley +1 more source
Advanced Functional Materials, Volume 36, Issue 33, 23 April 2026.Rational halogen mixing strategy was employed to shift the bandgap of Cs2PbBr2I2 from ultraviolet to visible region, enabling first realization of a visible‐light photodetector with this 2D layered Ruddlesden‐Popper perovskite material. Under illumination, light‐induced internal field forms and drives trap‐mediated persistent photoconductivity ...
Md Fahim Al Fattah +11 more
wiley +1 more source
Numerical analysis of the non-cooled infrared sensors based on different thermoelectric materials
Moldavian Journal of the Physical Sciences, 2008 Calculation and optimization of parameters for thermoelectric sensors of infra-red radiation based on CdSb, InSb, Bi2Te3, antimony, and Bi-Sb alloys have been realized.
Cherner, Iacov
doaj
Power dependence of phase noise in microwave kinetic inductance detectors [PDF]
, 2006 Excess phase noise has been observed in microwave kinetic inductance detectors (MKIDs) which prevents the noise-equivalent power (NEP) of current detectors from reaching theoretical limits. One characteristic of this excess noise is its dependence on the
LeDuc, Henry +5 more
core
Antenna coupled graphene-FET as ultra-sensitive room temperature broadband THz detector
AIP Advances, 2018 A high sensitivity, low power (∼1μW to 10 μW), room temperature, antenna coupled, THz (0.8 THz) detector is presented by means field effect transistor (FETs) fabricated on epitaxial-grown graphene on silicon carbide.
Rama Murali G K +3 more
doaj +1 more source
An Accurate Empirical Model Based on Volterra Series for FET Power Detectors
, 2016 An empirical model for field-effect transistor (FET) based power detectors is presented. The electrical model constitutes a Volterra analysis based on a Taylor series expansion of the drain current together with a linear embedding small-signal circuit ...
ANDERSSON, MICHAEL, +3 more
core +1 more source