Results 81 to 90 of about 582 (118)

Noise considerations for a 64x8 pixel CMOS time of flight range sensor

, 2022
S.68-69Noise analysis for a 64x8 pixel 3-D CMOS image sensor based on the time-of-flight (TOF) principle for car safety applications is presented. Due to low noise equivalent power (NEP) the sensor enables the detection of objects with a resolution of 2 ...
Elkhalili, O., Ulfig, W., Brockherde, W., Hosticka, B.J., Schrey, O.M.   +4 more
core  

Performance engineering of eco-friendly Mg2Si/Si photodetectors: TCAD-validated advantages of PIN over PN structures for visible-NIR detection

AIP Advances
The Mg2Si/Si heterojunction PN and PIN structure models have been established by the Atlas module of Silvaco TCAD software, and the detection properties of PN and PIN photodetectors (PDs), such as energy band, current–voltage, responsivity, external ...
Hong Yu, Qiusong Chen, Chenggui Gao
doaj   +1 more source

Superconducting Transition Edge Bolometer and Noise in Thin Films [PDF]

, 1978
We report the development of the composite superconducting transition edge bolometer. The temperature sensitive element is an aluminum strip evaporated onto the sapphire substrate. A bismuth film evaporated on the reverse side of the substrate is used to
Nan-Hsiung Yeh, Yeh, Nan-Hsiung
core   +1 more source

Graphene self-switching diodes as zero-bias microwave detectors

, 2015
Self-switching diodes (SSDs) were fabricated on as-grown and hydrogen-intercalated epitaxial graphene on SiC. The SSDs were characterized as zero-bias detectors with on-wafer measurements from 1 to 67 GHz.
A. Westlund, Winters, Michael, Grahn, Jan, Janzen, Erik, P.-Å. Nilsson, N. Rorsman, J. Hassan, J. Grahn, Westlund, Andreas, M. Winters, I. G. Ivanov, ul Hassan, J., Nilsson, Per-\uc5ke, Rorsman, Niklas, Ivanov, I. G., E. Janzén   +15 more
core   +2 more sources

Convergence of Thermistor Materials and Focal Plane Arrays in Uncooled Microbolometers: Trends and Perspectives

Nanomaterials
Uncooled microbolometers play a pivotal role in infrared detection owing to their compactness, low power consumption, and cost-effectiveness. This review comprehensively summarizes recent progress in thermistor materials and focal plane arrays (FPAs ...
Bo Wang, Xuewei Zhao, Tianyu Dong, Ben Li, Fan Zhang, Jiale Su, Yuhui Ren, Xiangliang Duan, Hongxiao Lin, Yuanhao Miao, Henry H. Radamson   +10 more
doaj   +1 more source

CALCON: Radiometry & SBIR Test Capability Overview

, 2023
Santa Barbara Infrared will present an infrared radiometer overview with radiometric concepts and figure of merits as related to SBIR’s spectro-radiometric test equipment and software capability.
Matis, Greg
core  

Millimeter and Sub-Millimeter Wave Performance of an ErAS:InAlGaAs Schottky Diode Coupled to a Single-Turn Square Spiral

, 2007
We report the first experimental results for noise-equivalent power (NEP) and noise-equivalent temperature difference (NETD) of single-crystal ErAs:InAlGaAs, zero-bias rectifier diodes coupled to free space quasi-optically in the THz region.
Zimmerman, J. D., Kazemi, H., Young, A. C., Gossard, A. C., Brown, Elliott R., Bjarnason, J. E.   +5 more
core   +2 more sources

Broadband InBiSe3 alloy photoelectric detector from visible to terahertz

AIP Advances
With the demand for communication, imaging, spectroscopy, and other applications, broadband detection has always been a particularly popular direction.
Hang Chen, Tuntan Wu, Shijie Chen, Qiyuan Zhang, Lin Jiang, Wei Zhou, Yanqing Gao, Niangjuan Yao, Zhiming Huang   +8 more
doaj   +1 more source

Ultra‐Sensitive Short‐Wave Infrared Single‐Photon Detection Using a Silicon Single‐Electron Transistor

Advanced Electronic Materials
Ultra‐sensitive short‐wave infrared (SWIR) photon detection is a crucial aspect of ongoing research in quantum technology. However, developing such detectors on a CMOS‐compatible silicon technological platform has been challenging due to the low ...
Pooja Sudha, Shogo Miyagawa, Arup Samanta, Daniel Moraru   +3 more
doaj   +1 more source

Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs [PDF]

, 2020
. Un-cooled AlGaN/GaN-based heterojunction field-effect transistors (HFET) designed on sapphire (0001) substrates were considered as 140 GHz direct detection detectors without any specially attached antennas.
I O Lysiuk, F F Sizov, J V Gumenjuk-Sichevska, A G Golenkov, K S Zhuravlev   +4 more
core