Results 1 to 10 of about 20,307 (216)

Light-induced giant random telegraph noise in CuScP2S6/MoS2 heterostructures and their use in noise resilience image inference [PDF]

open access: yesNature Communications
Random telegraph noise (RTN) is usually regarded as a hallmark of nanoscale conduction channels, arising from individual trapping events in semiconductors and oxide dielectrics.
Arpan Ghosh   +7 more
doaj   +2 more sources

Effects of Carrier Trapping and Noise in Triangular-Shaped GaN Nanowire Wrap-Gate Transistor [PDF]

open access: yesNanomaterials
The most widely used nanowire channel architecture for creating state-of-the-art high-performance transistors is the nanowire wrap-gate transistor, which offers low power consumption, high carrier mobility, large electrostatic control, and high-speed ...
Siva Pratap Reddy Mallem   +9 more
doaj   +2 more sources

Low-Frequency Noise Modeling Using EMD with Experimental Results Validation [PDF]

open access: yesهوش محاسباتی در مهندسی برق, 2023
Low-frequency noise modeling and estimation is a critical issue in the design of analog and digital circuits, especially for short-channel CMOS technologies.
Zeinab Shamaee   +2 more
doaj   +1 more source

Improved Low-Frequency Noise in Recessed-Gate E-Mode AlGaN/GaN MOS-HEMTs Under Electrical and Thermal Stress

open access: yesIEEE Journal of the Electron Devices Society, 2021
1/f noise provides essential information on the interface trapping effect as well as the scattering mechanism in transistors. In this work, a systematic 1/f noise study has been carried out on the recessed-gate enhancement-mode (E-mode) GaN MOS-HEMTs ...
Qianlan Hu   +4 more
doaj   +1 more source

Low-temperature enhanced OFF-state telegraph noise in defect engineered ReRAMs

open access: yesAPL Materials, 2023
The OFF-state retention characteristics of Pt/NiOx–(Ar)/NiOx–(Ar + O2)/Pt stacking resistive random access memory structures were measured as a function of temperature between 300 and 190 K.
H. S. Alagoz   +3 more
doaj   +1 more source

Variable-Temperature Noise Characterization of N-MOSFETs Using an In-Situ Broadband Amplifier

open access: yesIEEE Journal of the Electron Devices Society, 2021
Characterization of broadband noise of MOSFETs from room temperature down to 120 K in fine temperature steps is presented. A MOSFET is mounted on a reusable printed circuit board vehicle with a built-in low-noise amplifier, and the vehicle is loaded into
Kenji Ohmori, Shuhei Amakawa
doaj   +1 more source

New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs

open access: yesIEEE Journal of the Electron Devices Society, 2021
We review recent compact modeling solutions for Organic and Amorphous Oxide TFTs (OTFTs and AOS TFTs, respectively), which were developed, under the framework of the EU-funded project DOMINO, to address issues specifically connected to the physics of ...
Benjamin Iniguez   +14 more
doaj   +1 more source

Investigation of 1/f and Lorentzian Noise in TMAH-treated Normally-Off GaN MISFETs

open access: yesCrystals, 2020
A tetramethyl ammonium hydroxide (TMAH)-treated normally-off Gallum nitride (GaN) metal-insulator-semiconductor field-effect transistor (MISFET) was fabricated and characterized using low-frequency noise (LFN) measurements in order to find the conduction
Ki-Sik Im   +5 more
doaj   +1 more source

Trapping instability of an active particle in steering potential fields

open access: yesPhysical Review Research, 2022
A particle driven by active self-propulsion can be subject to inhomogeneous potential fields, steering its orientation and leading to confinement and eventual trapping.
Guangle Du, Fangfu Ye, Rudolf Podgornik
doaj   +1 more source

A minimal optical trapping and imaging microscopy system. [PDF]

open access: yesPLoS ONE, 2013
We report the construction and testing of a simple and versatile optical trapping apparatus, suitable for visualizing individual microtubules (∼25 nm in diameter) and performing single-molecule studies, using a minimal set of components.
Carmen Noemí Hernández Candia   +2 more
doaj   +1 more source

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