Results 141 to 150 of about 15,576,567 (291)

An Ultra Low Power Non-volatile Memory in Standard CMOS Process for Passive RFID Tags

, 2009
An ultra low power non-volatile memory is designed in a standard CMOS process for passive RFID tags. The memory can operate in a new low power operating scheme under a wide supply voltage and clock frequency range.
Feng P (Feng Peng), Feng, P, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. E-mail Address: nanjian@red.semi.ac.cn, Li YL (Li Yunlong), Wu NJ (Wu Nanjian)   +3 more
core  

Design of Skiplist Based Key-Value Store on Non-Volatile Memory

, 2018
© 2018 IEEE.Non-volatile Memory is promising to persistent data storage, which has outstanding advantages against traditional storage devices such as HDD and SSD.
Qichen Chen, Heonyoung Yeom, Chen, Qichen, Yeom, Heonyoung   +3 more
core   +1 more source

An Efficient Biological Codon Recognition Reservoir Computing System Based on Low‐Energy Epitaxial Hf0.52Zr0.48O2 Ferroelectric Memristors

Advanced Science, EarlyView.
This work reports on epitaxially grown Hf0.52Zr0.48O2 ferroelectric memristors with high stability (high durability exceeding 108 cycles and a retention time exceeding 104 s for 16 states) and ultra‐low operating energy consumption (∼121 fJ). A memristor array‐based reservoir computing system is constructed and applied for the first time in the field ...
Ying Liu, Jikang Xu, Yongqing Jia, Wenxuan Wang, Weifeng Zhang, Biao Yang, Xiaobing Yan   +6 more
wiley   +1 more source

4 × 4 bit Programmable Optical Memory Array With Digital Addressing Using Micro-Ring Resonators

IEEE Access
The development of photonic integrated circuit (PIC) based computing systems requires efficient optical memory units, which can be challenging to implement due to the need for precise routing of optical signals.
Assylkhan Nurgali, Bikash Nakarmi, Carlo Molardi, Ikechi Augustine Ukaegbu   +3 more
doaj   +1 more source

Advances and Perspectives in Graphene‐Based Quantum Dots Enabled Neuromorphic Devices

Advanced Science, EarlyView.
Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Yulin Zhen, Wei Zeng, Zherui Zhao, JiYu Zhao, Ziyan Huang, Zhuo Chen, Kui Zhou, Guanglong Ding, Su‐Ting Han, Ye Zhou   +9 more
wiley   +1 more source

Skyrmion-mediated nonvolatile ternary memory

Scientific Reports
Multistate memory systems have the ability to store and process more data in the same physical space as binary memory systems, making them a potential alternative to existing binary memory systems.
Md Mahadi Rajib, Namita Bindal, Ravish Kumar Raj, Brajesh Kumar Kaushik, Jayasimha Atulasimha   +4 more
doaj   +1 more source

Understanding and Designing Phase Change Materials: Insights From Atom Probe Tomography

Advanced Science, EarlyView.
Atom probe tomography can distinguish metallic, covalent, and metavalent bonds based upon their bond rupture; in particular, the probability to form more than one ion (PME) in laser‐assisted field evaporation. These findings open new avenues in understanding and designing phase change materials (PCMs) since they allow quantification of bonds in solids ...
Jan Köttgen, Nils von den Driesch, Alexander Pawlis, Matthias Wuttig   +3 more
wiley   +1 more source

Software Support for Atomicity and Persistence in Non-volatile Memory

, 2013
Advances in memory technology are promising the availability of byte-addressable persistent memory as an integral component of future computing platforms.
Varman, Peter, Giles, Ellis, Doshi, Kshitij   +2 more
core  

Polypyridyl chromium(III) complexes for non-volatile memory application: impact of the coordination sphere on memory device performance

, 2018
Molecular non-volatile memory devices are deemed to offer remarkable features such as low-cost, high retention times and low power consumption that could possibly catapult their implementation over the contemporary silicon-based devices.
Roy, V.A.L., Kandasamy, Balamurugan, Zhou, Li, Li Zhou, Chi-Chiu Ko, Xu, Zongxiang, V. A. L. Roy, Ganesamoorthi Ramar, Su-Ting Han, Shun-Cheung Cheng, Zongxiang Xu, Ramar, Ganesamoorthi, Ko, Chi-Chiu, Han, Su-Ting, Cheng, Shun-Cheung, Balamurugan Kandasamy, Shishir Venkatesh, Venkatesh, Shishir   +17 more
core   +1 more source

Interlayer‐Sliding‐Enabled Multiferroicity and Giant Switchable Anomalous Hall Conductivity in RuO2Zn2F2 Bilayer

Advanced Science, EarlyView.
Interlayer sliding in the RuO2Zn2F2 bilayer induces ferroelectricity and enables reversible valley polarization switching. The electric dipole and valley‐resolved band edges are intimately coupled, revealing sliding ferroelectricity as a powerful mechanism for electrical control of valley degrees of freedom in 2D materials.
Djamel Bezzerga, Imran Khan, Ganie Suhail Ahmad, Jisang Hong   +3 more
wiley   +1 more source