Anisotropic Memristive Switching in NbOCl2 Enabled by Directional Oxygen Ion Migration
Advanced Science, EarlyView.This study investigates strongly orientation‐dependent memristive switching in anisotropic NbOCl2, observed exclusively along the in‐plane c‐axis. The switching originates from direction‐selective oxygen‐ion migration and vacancy propagation that modulate the Pd/NbOCl2 Schottky barrier, enabling short‐term plasticity.
Caokun Wang +6 more
wiley +1 more source
NON-VOLATILE MEMORY DEVICE AND MOSFET USING GRAPHENE GATE ELECTRODE
, 2014 Disclosed herein is a method of remarkably improving the memory characteristics of a non-volatile memory device and the device reliability of the MOSFET using graphene which is a novel material that has a high work function and does not cause the ...
Park, Jong Kyung, Cho, Byung Jin
core +1 more source
Real‐Time Ferroelectric Domain Wall Dynamics During Electric Poling and Depoling
Advanced Science, EarlyView.Real‐time visualization of domain wall dynamics during alternating‐current poling, direct‐current poling, and electrical depoling in relaxor‐PT ferroelectric single crystals reveals distinct field‐dependent pathways and strong path dependence. Instant polarized light microscopy uncovers reversible domain wall nucleation, motion, and reconfiguration ...
Ziqi Wang +12 more
wiley +1 more source
2B1750 Smart Electronic Materials Non-Volatile Random Access Memory Technologies
, 2008 1 Today’s computer and information technology is strongly connected to the advancements in data storage technology. Presently the information being processed is stored in Dynamic Random Access Memory (DRAM).This RAM is quite fast but a big disadvantage ...
Muhammad Muneeb +3 more
core
Electrical Re-Writable Non-Volatile Memory Device based on PEDOT:PSS Thin Film. [PDF]
Micromachines (Basel), 2020 Salaoru I, Pantelidis CC.
europepmc +1 more source
Advanced Science, EarlyView.An antiferroelectric tunnel junction serves as a reservoir computing node, where field‐induced phase transitions and spontaneous ZrO2 relaxation deliver nonlinear fading memory. An In‐Ga‐Zn oxide interlayer enlarges the memory margin and multibit state richness.
Taegyu Kwon +13 more
wiley +1 more source
Ferroelectric-like Behavior Originating from Oxygen Vacancy Dipoles in Amorphous Film for Non-volatile Memory. [PDF]
Nanoscale Res Lett, 2020 Peng Y +9 more
europepmc +1 more source
Organic Electrochemical Transistors for Neuromorphic Bioelectronics: Materials and Manufacturing Technologies. [PDF]
Adv Sci (Weinh)Organic electrochemical transistors bridge biological ionic signaling and neuromorphic computation through volumetric electrochemical gating. This review connects Organic mixed ionic–electronic conductor materials, device architectures, and manufacturing technologies to show how geometry, ion transport, and fabrication strategies program plasticity ...
Lee H +5 more
europepmc +2 more sources
Integration of Reconfigurable p‐Bit and 1R Crossbar Array for Memristive Probabilistic Computing
Advanced Science, EarlyView.A memristive probabilistic computing system is demonstrated by integrating stochastic p‐bits based on volatile memristors with a 1R crossbar array encoding interaction weights. The system performs weighted‐sum operations across the array and updates p‐bits iteratively.
Keunho Soh +7 more
wiley +1 more source
MRAM: A Versatile Non-Volatile Memory for Next-Generation Computing. [PDF]
Nanomaterials (Basel)Wang Z, Li H, Jiang S.
europepmc +1 more source