Results 211 to 220 of about 15,576,567 (291)
Advanced Science, EarlyView.In this work, we present a bile‐based memristor hardware framework that enables direct, label‐free identification of cholelithiasis and gallbladder cancer at the device level. The Ag/bile/FTO memristor features stable resistive switching and disease‐specific electrical responses, providing a conceptual foundation for circuits and an integrated ERCP ...
Junming Zhu +17 more
wiley +1 more source
Non-volatile memory devices with redox-active diruthenium molecular compound. [PDF]
J Phys Condens Matter, 2016 Pookpanratana S +7 more
europepmc +1 more source
Functional MXene Inks for Printed Electronics: Chemistry, Rheology, and Devices
Advanced Science, EarlyView.Functional MXene inks are emerging as building blocks for MXetronics, connecting MXene synthesis, surface functionalization, ink formulation, and advanced printing with device‐level applications. This review maps how composition, stability, rheology, and processability govern printed structures and enable high‐performance sensors, energy‐storage ...
Shahzaib Ali +6 more
wiley +1 more source
Non-volatile ferroelectric photonic memory for photonic applications
Non-volatile photonic memory has attracted growing interest for future optical computing and in-memory photonic computing systems, where low-power operation, fast readout and reduced data movement are highly desirable.
Gao, Yuxiang
core
Wearable E‐Textiles for Cardiovascular Monitoring: Materials, Devices, and Integrated Systems
Advanced Science, EarlyView.The graphical abstract highlights the role of conductive materials and textile fabrication techniques in enabling smart textiles for cardiovascular applications. It showcases textile‐based ECG monitoring, pulse sensing, hemodynamic monitoring, and cardiovascular tissue engineering, while emphasizing the challenges and design considerations that govern ...
Bangul Khan +3 more
wiley +1 more source
Advanced Science, EarlyView.GeSbSe selector‐only memory devices are investigated through physical and electrical analyses to reveal opposite trap‐state evolution pathways governing reliability degradation. Endurance cycling drives Se migration, transitioning traps from deep to shallow states.
Byung Jun Lee +3 more
wiley +1 more source
Effect of Bilayer CeO2-x/ZnO and ZnO/CeO2-x Heterostructures and Electroforming Polarity on Switching Properties of Non-volatile Memory. [PDF]
Nanoscale Res Lett, 2018 Ismail M +6 more
europepmc +1 more source
Uniaxial Strain‐Driven Ferroelastic Domain Tuning in LaAlO3${\rm LaAlO}_3$
Advanced Science, EarlyView.The present work demonstrates based on AFM, μ$\umu$‐Raman spectroscopy, XRD, and first‐principles, that uniaxial strain provides a handle for tuning the ferroelastic domain populations in lanthanum aluminate, driving a continuous and controlled phase transition from a four‐variant rhombohedral crystal system to a two‐variant orthorhombic crystal system
Matthias Roeper +17 more
wiley +1 more source
Advanced Science, EarlyView.This work presents trap‐programmable Ruddlesden–Popper perovskite nanocrystals for ultralong‐lived optical memory and photonic synapses. Layer‐controlled octahedral distortion modulates trap depth and carrier‐storage kinetics, enabling persistent luminescence beyond 5000 s at room temperature.
Xuanyu Zhu +12 more
wiley +1 more source
Unraveling the Effects of Depolarization in Ultrathin Barium Titanate
Advanced Science, EarlyView.This article employs synchrotron‐based spectroscopy, time‐resolved electrical measurements, and phase‐field simulations to establish reverse‐domain formation as the mechanism of polarization loss in ultrathin BaTiO3${\rm BaTiO}_3$ films as a critical obstacle to low‐voltage ferroelectric devices.
Thomas Lee +6 more
wiley +1 more source