Results 221 to 230 of about 15,576,567 (291)

Hardware Acceleration of Stochastic Neural Networks Enabled by Bit‐Cell Level Co‐Design of Magnetic Tunnel Junctions

open access: yesAdvanced Science, EarlyView.
An MTJ‐based probabilistic processing‐in‐memory architecture unites nonvolatile storage, local entropy generation, and stochastic computation within each memory cell. Stored multi‐bit weights are converted directly into programmable stochastic bitstreams, enabling neural‐network inference, adaptive Ising optimization, and uncertainty‐aware Bayesian ...
Qiuyuan Wang   +6 more
wiley   +1 more source

Re‐Thinking Electronic Circuit Design Through Emerging Reconfigurable Field Effect Transistors

open access: yesAdvanced Science, EarlyView.
Graphical illustration of reconfigurable field effect transistor (RFET) operation modes, including n‐type, p‐type, and ambipolar transport, as well as their areas of application discussed in this review: digital circuit design, analog circuit design, post‐Shannon computing, and sensing. ABSTRACT Reconfigurable field‐effect transistors, short RFETs, are
Jens Trommer   +19 more
wiley   +1 more source

Lattice Disorder in CuI Enables Filament‐Free Transparent Memristors

open access: yesAdvanced Science, EarlyView.
Transparent Cu1‐xAgxI thin‐film memristors rely on internal ion transport to produce reversible resistive‐switching effects. Direct elemental characterizations observe obvious Cu and Ag redistribution driven by applied bias, proving mobile ions drive the device's resistive‐switching responses.
Yuzhao Ouyang   +13 more
wiley   +1 more source

Polarity‐Controlled Coexistence of Electrochemical Metallization and Valence Change Mechanisms in a Unified Metal Halide Perovskite Memristor

open access: yesAdvanced Science, EarlyView.
Electrochemical metallization and valence change mechanisms are shown to coexist within a single metal halide perovskite memristor, selectively activated by simply reversing the electroforming voltage polarity. Ag‐driven switching delivers low operating voltages and high endurance, while intrinsic ion migration yields superior retention and resistance ...
Ismael Fernandez‐Guillen   +4 more
wiley   +1 more source

A Compact and Fast Single‐Spike TTFS Encoder With Ultralow Operating Voltage for Efficient Neuromorphic Fourier Transform

open access: yesAdvanced Science, EarlyView.
A Pt/TaOx/V single‐spike TTFS encoder achieves ultralow‐voltage (∼0.35 V), high‐speed (∼100 ns) operation with simplified circuitry. Integrating bipolar nonuniform temporal encoding with a spiking‐DFT neuron model enables a neuromorphic FFT framework. Device‐calibrated simulations demonstrate high spectral fidelity across multitone, speech, and chirp ...
Yang Wu   +10 more
wiley   +1 more source

Sliding Ferroelectric Metals: An Emerging Frontier

open access: yesAdvanced Science, EarlyView.
This Perspective highlights recent advances in sliding ferroelectric metals, focusing on the coexistence of switchable polarization and metallicity. Representative nonmagnetic and magnetic systems are discussed, together with Berry‐curvature memory, superconducting switching, triply‐coupled switching, magnetoelectric coupling, and electrically ...
Ying Yang   +3 more
wiley   +1 more source

Recent Advances in High‐Entropy Nanozymes: From Fabrication to Applications

open access: yesAdvanced Science, EarlyView.
To highlight key achievements and clarify the current landscape of high‐entropy nanozymes (HEAzymes), this review summarizes state‐of‐the‐art developments ranging from thermodynamically and kinetically controlled synthetic strategies; enzyme‐like catalytic types, catalytic characteristics, and underlying mechanisms; to their antioxidative, therapeutic,
Yongjian Ai   +8 more
wiley   +1 more source

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