Results 51 to 60 of about 12,145,528 (300)

Design and Assessment of Hybrid MTJ/CMOS Circuits for In-Memory-Computation

Journal of Low Power Electronics and Applications
Hybrid magnetic tunnel junction/complementary metal oxide semiconductor (MTJ/CMOS) circuits based on in-memory-computation (IMC) architecture is considered as the next-generation candidate for the digital integrated circuits.
Prashanth Barla, Hemalatha Shivarama, Ganesan Deepa, Ujjwal Ujjwal   +3 more
doaj   +1 more source

Adjusting Nucleation Chemistry for the Atomic Layer Deposition of Antimony Selenide on Metal Oxide Surfaces

Advanced Engineering Materials, EarlyView.
The ALD precursor bis(trimethylsilyl)selenide is simultaneously a substrate surface inhibitor. It allows for the growth of Sb2Se3 in combination with tris(dimethylamido)antimony, but also silylates surface hydroxyl groups on the substrate if such hydroxyls are present.
Pei‐Chun Liao, Klaus Götz, Johannes Will, Mingjan Wu, Martin Dierner, Patrick Duchstein, Dirk Zahn, Tobias Unruh, Erdmann Spiecker, Julien Bachmann   +9 more
wiley   +1 more source

Low-Temperature Formed Quaternary NiZrSiGe Nanocrystal Memory

International Journal of Electrochemical Science, 2015
This study investigated the formation of quaternary NiZrSiGe nanocrystal (NC) flash memory by using the sol-gel spin-coating method. A solution of nickel dichloride, zirconium tetrachloride, silicon tetrachloride, and germanium tetrachloride was used as ...
Chia-Yu Wu, Huei Yu Huang, Chi-Chang Wu
doaj   +1 more source

Influence of Fe Particle Size Distribution on Chemical Homogeneity, Microstructure, and Crack Formation in Fe–SiC Powder Blends Processed by PBF‐LB/M

Advanced Engineering Materials, EarlyView.
The influence of Fe particle size on in situ alloying of Fe–SiC powder blends in PBF‐LB/M is revealed. Contrary to expectations, the coarser Fe fraction provides a broader crack‐free processing window and slightly improved elemental homogeneity while producing higher but more variable hardness. The results highlight a complex trade‐off between particle
Anna Luise Strauch, Anastasiya Toenjes, Matthias Steinbacher   +2 more
wiley   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Chalcogenide phase-change material advances programmable terahertz metamaterials: a non-volatile perspective for reconfigurable intelligent surfaces

Nanophotonics
Terahertz (THz) waves have gained considerable attention in the rising 6G communication due to their large bandwidth. However, the cost and power consumption become the major constraints for the commercialization of 6G THz systems as the frequency ...
Chen Kai, Song Wenju, Li Zhaolin, Wang Zihao, Ma Junqing, Wang Xinjie, Sun Tao, Guo Qinglei, Shi Yanpeng, Qin Wei-Dong, Song Aimin, Chen Hou-Tong, Zhang Yifei   +12 more
doaj   +1 more source

Safety Assessment of Recycled Polyolefins for Food Contact Applications: Non-Target Screening of Volatile and Non-Volatile Substances [PDF]

, 2021
The thesis aims to establish sensitive and reliable sample pre-treatment methods as well as data analysis workflows to identify and quantify migrants from recycled polyolefins.
Su, Qizhi, Nerin De La Puerta, Cristina, Vera Estacho, Paula   +2 more
core  

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Measurements of non-volatile aerosols with a VTDMA and their correlations with carbonaceous aerosols in Guangzhou, China [PDF]

Atmospheric Chemistry and Physics, 2016
Simultaneous measurements of aerosol volatility and carbonaceous matters were conducted at a suburban site in Guangzhou, China, in February and March 2014 using a volatility tandem differential mobility analyzer (VTDMA) and an organic carbon/elemental
H. H. Y. Cheung, H. Tan, H. Xu, F. Li, C. Wu, J. Z. Yu, J. Z. Yu, C. K. Chan, C. K. Chan, C. K. Chan   +9 more
doaj   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source