Results 141 to 150 of about 178,824 (287)

Reconfigurable, Temperature Resilient Phase‐Change Metasurfaces Fabricated via High Throughput Nanoimprinting Lithography

Advanced Science, EarlyView.
ABSTRACT The combination of metasurfaces with chalcogenide phase‐change materials is a highly promising route toward the development of multifunctional and reconfigurable nanophotonic devices. However, their transition into real‐world devices is hindered by several technological challenges. This includes, amongst others, the lack of large area photonic
Carlota de Ruiz de Galarreta, Yinghao Zhao, Jose Mendoza‐Carreño, José M. Caicedo, José Santiso, C. David Wright, M. Isabel Alonso, Jiafang Li, Agustin Mihi   +8 more
wiley   +1 more source

Progress of emerging non-volatile memory technologies in industry. [PDF]

MRS Commun
Hellenbrand M, Teck I, MacManus-Driscoll JL.   +2 more
europepmc   +1 more source

All‐Optical Control of Bidirectional Polarization Switching in Ferroelectric Heterostructures for Neuromorphic and In‐Memory Computing

Advanced Science, EarlyView.
We propose an optical ferroelectric field‐effect transistor, composed of a MoS2/CIPS heterostructure, demonstrates the feasibility of all‐optical nonvolatile memory, neuromorphic computing, and logic‐in‐memory operations. The device exhibits reversible light‐controlled memory states, retina‐like synaptic plasticity, and wavelength‐selective ...
Jingjie Niu, Jiahui Lyu, Jie Li, Koyal Suman Samantaray, Cheolhwa Jang, Yoonmyung Lee, Ji‐Sang Park, Sungjoo Lee   +7 more
wiley   +1 more source

Orbital Magnetic Moment Controlled Converse Magnetoelectric Effect in bcc‐Co3Mn/Fe/V/PMN‐PT Multiferroic Heterostructures

Advanced Science, EarlyView.
Based on orbital magnetic moment control, a material design strategy is proposed for a giant converse magnetoelectric effect in multiferroic heterostructures. This study will pioneer a promising route toward low‐power spintronic devices with an electric field.
Takamasa Usami, Yuichi Murakami, Ryota Watarai, Yu Shiratsuchi, Yoshihiro Gohda, Kohei Hamaya   +5 more
wiley   +1 more source

In Situ Thermal Decomposition of Potassium Borohydride for Borophene Synthesis and Its Application in a High-Performance Non-Volatile Memory Device. [PDF]

Nanomaterials (Basel)
Tian Q, Liang X, Xu M, Liu Y, Wu Q, Tai G.   +5 more
europepmc   +1 more source

Superradiance and Broadband Emission Driving Fast Electron Dephasing in Open Quantum Systems

Advanced Science, EarlyView.
We uncover the physical origin of ultrafast electron dephasing in solid‐state high‐harmonic generation by simulating the Lindblad equation for the dissipative Hubbard model. Coexistence of Dicke superradiance and broadband emission is revealed, whose destructive interference shortens the effective scattering time and provides a unified picture of ...
Gimin Bae, Youngjae Kim, Jae Dong Lee
wiley   +1 more source

Infrared Machine Vision System Based on Te NWs‐Au NPs Plasmonic Optoelectronic Memristor for Motion Detection

Advanced Science, EarlyView.
A plasmonic optoelectronic memristor based on Te nanowires‐Au nanoparticles/ι‐carrageenan enables IR‐programmed and visiblelight‐erased non‐volatile conductance. The all‐photonic write/erase scheme supports in‐sensor logic and real‐time motion detection in darkness.
Jingyao Bian, Yongxing Zhu, Ye Tao, Zhongqiang Wang, Xiaoning Zhao, Ya Lin, Haiyang Xu, Yichun Liu   +7 more
wiley   +1 more source

Spin‐Selective Interface Engineering in Oxide–Ferromagnetic Junctions via Atomic‐Scale Oxygen Control

Advanced Science, EarlyView.
We show that interfacial oxygen at the MgO/Fe interface can be transformed from an uncontrolled variable into a tunable design parameter for spintronic junctions. Momentum microscopy provides direct access to the momentum‐ and spin‐resolved electronic structure beneath the insulating MgO layers, revealing how oxygen intercalation reshapes buried Fe ...
David Maximilian Janas, Mira Sophie Arndt, Jonah Elias Nitschke, Lasse Sternemann, Valentin Mischke, Vitaliy Feyer, Iulia Cojocariu, Daniel Baranowski, Alessandro Sala, Andreas Windischbacher, Peter Puschnig, Jan Dreiser, Stefano Ponzoni, Giovanni Zamborlini, Mirko Cinchetti   +14 more
wiley   +1 more source

Non-Volatile Memory Based on ZnO Thin-Film Transistor with Self-Assembled Au Nanocrystals. [PDF]

Nanomaterials (Basel)
Xie H, Wu H, Liu C.
europepmc   +1 more source

Threshold‐Voltage Modulation and N2O Plasma Passivation for Enhanced Retention and Memory Window in Capacitorless 2T0C DRAM Oxide Thin‐Film Transistors

Advanced Science, EarlyView.
Al:ITZO‐based capacitorless 2T0C DRAMs are realized by combining N2O plasma‐induced defect modulation with read‐transistor W/L optimization to suppress leakage and stabilize data storage. This device‐level engineering enables zero‐bias hold operation, retention times exceeding 1000 s, and a 13‐fold expansion of the memory window, demonstrating a ...
Chahwan Yang, Mirinae Lee, Junghoon Han, Sooji Nam   +3 more
wiley   +1 more source