Results 141 to 150 of about 178,893 (267)

Artificial Neuron Based on Electrical Anisotropy from WSe2 Field Effect Transistors

Advanced Science, EarlyView.
An artificial neuron was realized based on the anisotropic mobility of WSe2. Dendritic and axon‐multisynaptic performance of a neuron was achieved with optical and voltage pulses. Recognition accuracy of handwritten digits was obtained to 97% based on the synaptic weight of an artificial neuron.
Qi Sun, Ping Chen, Kun Lv, Chuanwen Chen, Jinsheng Zhu, Zhiling Chen, Yaxian Lu, Ni Zhang, Zongqian Tan, Tao Lin, Caofeng Pan   +10 more
wiley   +1 more source

Progress of emerging non-volatile memory technologies in industry. [PDF]

MRS Commun
Hellenbrand M, Teck I, MacManus-Driscoll JL.   +2 more
europepmc   +1 more source

Heterosynaptic Memtransistors Based on Switching Operation Mechanism Using Designed Organic/Inorganic Heterostructures for Neuromorphic Electronics

Advanced Science, EarlyView.
Heteroysynaptic memtransistors are fabricated using a combination of π‐conjugated organic semiconductor TCTA and TMDC MoS2 heterostructure with bottom‐contact architecture. Non‐volatile heterosynaptic and homosynaptic functions such as long‐term plasticity and spike‐timing‐dependent plasticity are emulated by drain and gate pulses based on conduction ...
Taek Joon Kim, Hye Lim Jeong, Sang Wook Song, Dayeong Kwon, Sang‐hun Lee, Jinsoo Joo   +5 more
wiley   +1 more source

GPCRs in CAR‐T Cell Immunotherapy: Expanding the Target Landscape and Enhancing Therapeutic Efficacy

Advanced Science, EarlyView.
Chimeric antigen receptor T cell therapy faces dual challenges of target scarcity and an immunosuppressive microenvironment in solid tumors. This review highlights how G protein‐coupled receptors can serve as both novel targets to expand the therapeutic scope and functional modules to enhance CAR‐T cell efficacy.
Zhuoqun Liu, Yuchen Xiao, Yamin Zhao, Lihe Dai, David J.H. Shih, Shikang Liang, Honglei Tian, Liu Liu, Feng Tian, Bing Liu, Lei Chang, Chao Zhang   +11 more
wiley   +1 more source

In Situ Thermal Decomposition of Potassium Borohydride for Borophene Synthesis and Its Application in a High-Performance Non-Volatile Memory Device. [PDF]

Nanomaterials (Basel)
Tian Q, Liang X, Xu M, Liu Y, Wu Q, Tai G.   +5 more
europepmc   +1 more source

Modification Strategies of Carbon‐Based Electrodes From Structural Regulation to Multifunctional Integration

Advanced Science, EarlyView.
Tracing the evolution from structural regulation to multifunctional integration, this paper systematically analyzes modification strategies for carbon‐based electrodes. It evaluates how element doping, surface functionalization, and composite material design affect the electrode performance, and offers perspectives on future applications and challenges
Yunlei Wang, Shitao Dou, Yifan Wu, Mingguang Wang, Taibin Wu   +4 more
wiley   +1 more source

Interlayer Dzyaloshinskii–Moriya Interaction in Synthetic Ferrimagnets for Spiking Neural Networks

Advanced Science, EarlyView.
This work introduces a groundbreaking integration of asymmetric magnetic structures (synthetic ferrimagnets) and antisymmetric magnetic interaction (interlayer Dzyaloshinskii–Moriya interaction) for the first time. It addresses the critical challenge of IL‐DMI detection and shows the discovery of unprecedented analog‐like spin‐orbit torque switching ...
Shen Li, Xing Chen, Mouad Fattouhi, Tianxun Huang, Chen Lv, Mark C. H. de Jong, Pingzhi Li, Daoqian Zhu, Xiaoyang Lin, Felipe Garcia‐Sanchez, Eduardo Martinez, Stéphane Mangin, Bert Koopmans, Weisheng Zhao, Reinoud Lavrijsen   +14 more
wiley   +1 more source

Noise Fingerprints as a Quantitative Order Parameter for Polarization‐ and Defect‐Mediated Switching in Hafnia Ferroelectrics

Advanced Science, EarlyView.
Low‐frequency noise fingerprints in hafnia ferroelectrics provide a quantitative handle to resolve the long‐standing debate between polarization‐mediated and defect‐mediated switching. By tuning oxygen vacancy density via ALD O3 dose time and applying a physically constrained deconvolution, we extract bias‐resolved current fractions for both mechanisms
Ryun‐Han Koo, Jiseong Im, Joon Hwang, Sung‐Ho Park, Jonghyun Ko, Kangwook Choi, Sangwoo Ryu, Gyuweon Jung, Jong‐Ho Lee   +8 more
wiley   +1 more source

Non-Volatile Memory Based on ZnO Thin-Film Transistor with Self-Assembled Au Nanocrystals. [PDF]

Nanomaterials (Basel)
Xie H, Wu H, Liu C.
europepmc   +1 more source

Low‐Voltage and High‐k Properties of Bilayer HZO Capacitors at the Morphotropic Phase Boundary for Next‐Generation Memory Applications

Advanced Science, EarlyView.
The HfxZr1‐xO2‐based ferroelectric/antiferroelectric bilayer capacitor exhibits morphotropic‐phase‐boundary behavior with a high dielectric constant (∼52) at 2 V. Phase engineering stabilizes o/t‐phase coexistence and suppresses m‐phase formation, enabling capacitance enhancement and self‐optimization under cycling for scalable low‐voltage, high‐κ ...
Junseok Kim, Hyeonjung Park, Changwoo Han, Huiseong Shin, Myeongjae Choi, Changhwan Shin   +5 more
wiley   +1 more source