Results 121 to 130 of about 11,806,743 (291)

MoS2/Graphene Floating‐Gate Transistor Toward Non‐Volatile Memory and High‐Precision Synaptic Operations

Advanced Electronic Materials
Molybdenum disulfide (MoS2) and graphene, as two significant members of the two‐dimensional family, have garnered considerable attention for enhanced non‐volatile memory (NVM) applications. Nonetheless, the synaptic behavior of the MoS2/graphene floating‐
Md. Ibrahim Ahmed, Sharnali Islam
doaj   +1 more source

Non-Volatile Memory and Synaptic Characteristics of TiN/CeO_x/Pt RRAM Devices. [PDF]

Materials (Basel), 2022
Ha H, Pyo J, Lee Y, Kim S.
europepmc   +1 more source

Low temperature rectifying junctions for crossbar non-volatile memory devices

, 2009
ZnO-based Schottky junctions fabricated at low temperature are proposed as selectors for crossbar non-volatile memory devices. Rectifying ratio over 10(7) and forward current density as high as 10(4) A/cm(2) are reported.
PLugli, G Tallarida, B KutrzebaKotowska, A Redaelli, M Arcari, N Huby, R Bez, G Csaba, S Spiga   +8 more
core  

Topological Spin‐Texture Transitions in van der Waals Magnets Revealed by X‐Ray Fourier Transform Holography

Advanced Materials, EarlyView.
Applied here for the first time to a 2D material, high‐resolution synchrotron x‐ray Fourier transform holography directly images topological spin textures in Fe3GeTe2. Combined with atomistic tight‐binding simulations including itinerant electrons and Rashba spin‐orbit coupling, the approach reveals labyrinth, skyrmion, and mixed phases, and uncovers ...
Sourav Chowdhury, Soumyaranjan Dash, Michael Schneider, Christopher Klose, Chithra H. Sharma, Lisa‐Marie Kern, Tim A. Butcher, Josefin Fuchs, Santanu Pakhira, Samik DuttaGupta, Takashi Taniguchi, Kenji Watanabe, Sujit Das, Sanjeev Kumar, Bastian Pfau, Amir‐Abbas Haghighirad, Moritz Hoesch   +16 more
wiley   +1 more source

Sub-10 fJ/bit radiation-hard nanoelectromechanical non-volatile memory. [PDF]

Nat Commun, 2023
Lee YB, Kang MH, Choi PK, Kim SH, Kim TS, Lee SY, Yoon JB.   +6 more
europepmc   +1 more source

Software Support for Atomicity and Persistence in Non-volatile Memory

, 2013
Advances in memory technology are promising the availability of byte-addressable persistent memory as an integral component of future computing platforms.
Varman, Peter, Giles, Ellis, Doshi, Kshitij   +2 more
core  

Descriptors to Dynamics: A Materials and Device Perspective on in‐Materio Physical Reservoir Computing for Neuromorphic Edge Intelligence

Advanced Materials, EarlyView.
Intrinsic material dynamics are harnessed as computational resources for neuromorphic in‐materio physical reservoir computing. Defects, ionic motion, interfaces, percolation, geometry, and biasing shape transient states that provide fading memory, nonlinearity, and high‐dimensional projection for simple readout. A descriptor‐to‐dynamics framework links
Kshitij RB Singh, Alif Syafiq Kamarol Zaman, Muzhen Xu, Yuki Usami, Saptarshi Das, Hirofumi Tanaka   +5 more
wiley   +1 more source

Energy efficient photonic memory based on electrically programmable embedded III-V/Si memristors: switches and filters

Communications Engineering
Over the past few years, extensive work on optical neural networks has been investigated in hopes of achieving orders of magnitude improvement in energy efficiency and compute density via all-optical matrix-vector multiplication. However, these solutions
Stanley Cheung, Bassem Tossoun, Yuan Yuan, Yiwei Peng, Yingtao Hu, Wayne V. Sorin, Geza Kurczveil, Di Liang, Raymond G. Beausoleil   +8 more
doaj   +1 more source

Relieving Compression-Induced Local Wear on Non-Volatile Memory Block via Sliding Writes. [PDF]

Micromachines (Basel), 2023
Jin K, Du Y, Zhang M, Yin Z, Ausavarungnirun R.   +4 more
europepmc   +1 more source

Dual‐State Programmable Oxide Transistor for Time‐Based Cryptography

Advanced Materials, EarlyView.
A DUPOT enables independently tunable Vth and Isat depending on gate bias polarity, producing three‐dimensional dynamical behavior within a transfer characteristic. This behavior originates from charge trapping and oxygen‐ion migration in the HfO2 layer.
Huisu Noh, Min Gu Lee, Hwayoung Kim, Myeongchan Ko, Jungwan Noh, Taewook Go, Jingyao Yu, Sang‐Hee Ko Park, Himchan Cho, Kyung Min Kim   +9 more
wiley   +1 more source