Results 121 to 130 of about 13,760,510 (244)

High‐Throughput Screening and Interpretable Machine Learning for Rational Design of Bimetallic Catalysts for Methane Activation

Advanced Science, EarlyView.
ABSTRACT Methane's efficient catalytic removal is vital for sustainable development. Bimetallic catalysts, though promising for methane activation, pose a design challenge due to their complex compositional space. This work introduces an integrated framework that combines high‐throughput density functional theory (DFT) and interpretable machine ...
Mingzhang Pan, Tian Zhang, Jiawei Dong, Yubao Xie, Kaifeng Zhong, Wei Guan, Haiqiao Wei, Changcheng Fu, Yaqiong Su   +8 more
wiley   +1 more source

Design of Skiplist Based Key-Value Store on Non-Volatile Memory

, 2018
© 2018 IEEE.Non-volatile Memory is promising to persistent data storage, which has outstanding advantages against traditional storage devices such as HDD and SSD.
Qichen Chen, Heonyoung Yeom, Chen, Qichen, Yeom, Heonyoung   +3 more
core   +1 more source

Ferroelectric Devices for In‐Memory and In‐Sensor Computing

Advanced Science, EarlyView.
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang, Ronghuan Xie, Qiang Cao, Shishen Yan, Xiaolin Wang, Limei Zheng   +5 more
wiley   +1 more source

Off-chip prefetching based on Hidden Markov Model for non-volatile memory architectures. [PDF]

PLoS One, 2021
Lamela A, Ossorio ÓG, Vinuesa G, Sahelices B.   +3 more
europepmc   +1 more source

An Efficient Biological Codon Recognition Reservoir Computing System Based on Low‐Energy Epitaxial Hf0.52Zr0.48O2 Ferroelectric Memristors

Advanced Science, EarlyView.
This work reports on epitaxially grown Hf0.52Zr0.48O2 ferroelectric memristors with high stability (high durability exceeding 108 cycles and a retention time exceeding 104 s for 16 states) and ultra‐low operating energy consumption (∼121 fJ). A memristor array‐based reservoir computing system is constructed and applied for the first time in the field ...
Ying Liu, Jikang Xu, Yongqing Jia, Wenxuan Wang, Weifeng Zhang, Biao Yang, Xiaobing Yan   +6 more
wiley   +1 more source

A reliable non‐volatile in‐memory computing associative memory based on spintronic neurons and synapses

Engineering Reports
This article introduces an innovative non‐volatile associative memory (AM) that leverages spintronic synapses, employing magnetic tunnel junctions (MTJ) in conjunction with neurons constructed using carbon nanotube field‐effect transistors (CNTFETs). Our
Mahan Rezaei, Abdolah Amirany, Mohammad Hossein Moaiyeri, Kian Jafari   +3 more
doaj   +1 more source

An Ultra Low Power Non-volatile Memory in Standard CMOS Process for Passive RFID Tags

, 2009
An ultra low power non-volatile memory is designed in a standard CMOS process for passive RFID tags. The memory can operate in a new low power operating scheme under a wide supply voltage and clock frequency range.
Feng P (Feng Peng), Feng, P, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. E-mail Address: nanjian@red.semi.ac.cn, Li YL (Li Yunlong), Wu NJ (Wu Nanjian)   +3 more
core  

Advances and Perspectives in Graphene‐Based Quantum Dots Enabled Neuromorphic Devices

Advanced Science, EarlyView.
Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Yulin Zhen, Wei Zeng, Zherui Zhao, JiYu Zhao, Ziyan Huang, Zhuo Chen, Kui Zhou, Guanglong Ding, Su‐Ting Han, Ye Zhou   +9 more
wiley   +1 more source

Ultralow-Energy Analog Reservoir Computing via Reconfigurable 2-Transistor Memory. [PDF]

Adv Sci (Weinh)
This work presents a reconfigurable reservoir‐computing platform based on an oxide InSnZnO two‐transistor cell in which a hold bias selects volatile relaxation for the reservoir or quasi‐non‐volatile multilevel storage for the readout. Multi‐level hold‐bias kernel tune relaxation currents to generate diverse time constants, enriching reservoir states ...
Park JM, Kim YI, Yoon JH, Lee S, Ham W, Lee D, Lee J, Shin D, Park KJ, Namgung SD, Song MK, Kwon JY.   +11 more
europepmc   +2 more sources

Understanding and Designing Phase Change Materials: Insights From Atom Probe Tomography

Advanced Science, EarlyView.
Atom probe tomography can distinguish metallic, covalent, and metavalent bonds based upon their bond rupture; in particular, the probability to form more than one ion (PME) in laser‐assisted field evaporation. These findings open new avenues in understanding and designing phase change materials (PCMs) since they allow quantification of bonds in solids ...
Jan Köttgen, Nils von den Driesch, Alexander Pawlis, Matthias Wuttig   +3 more
wiley   +1 more source