Results 101 to 110 of about 19,012 (258)

Building storage systems in big data era:challenges,methods and trends

大数据, 2019
The rapid expansion of the Internet has led to an explosive growth in global data.New applications,such as the Internet of things and e-commerce,demand higher requirements for the latency and performance of data storage and processing.Thus,big data is ...
Youmin CHEN, Fei LI, Jiwu SHU
doaj  

The 3D Monolithically Integrated Hardware Based Neural System with Enhanced Memory Window of the Volatile and Non‐Volatile Devices

Advanced Science
3D neuromorphic hardware system is first demonstrated in neuromorphic application as on‐chip level by integrating array devices with CMOS circuits after wafer bonding (WB) and interconnection process.
Yu‐Rim Jeon, Donguk Seo, Yoonmyung Lee, Deji Akinwande, Changhwan Choi   +4 more
doaj   +1 more source

WS2 Optoelectronic Memristive Reservoir Enabling Ultra‐Low‐Power, Multi‐Task, and Environmentally Stable Neuromorphic Computing

Advanced Science, EarlyView.
WS2‐based in‐memory sensing reservoir computing integrates sensing, memory, and computation in one compact device. It achieves ∼94% N‐MNIST, ∼93% eye motion perception, and ∼89% speech recognition with ultra‐low energy (∼25.5 fJ/spike). The system shows stability at 95% humidity, endurance over 1.5M cycles, and supports synaptic plasticity, enabling ...
Dayanand Kumar, Hanrui Li, Divyanshu Divyanshu, Dhananjay D. Kumbhar, Manoj Kumar Rajbhar, Amit Singh, Abdul Momin Syed, Selma Amara, Gianluca Setti, Nazek El‐Atab   +9 more
wiley   +1 more source

Large‐Scale Growth of Self‐Poled Ferroelectric Rashba Semiconductor α‐GeTe(111) Thin Films: A Crucial Step Towards Future CMOS‐Compatible Ferroelectric Spintronic Devices

Advanced Science, EarlyView.
Ferroelectric Rashba semiconductors promise ultralow‐power devices but lack industry‐quality films. This work demonstrates CMOS‐compatible fabrication of high‐quality α‐GeTe(111) films via magnetron sputtering, enabled by a 5 nm Sb2Te3 seed layer. Structural and ferroelectric analyses show robust, switchable polarization comparable to MBE films, paving
Jules Lagrave, Nicolas Bernier, Thomas Jalabert, Yoann Brûlé, Damien Térébénec, Pierre Meilleur, Hervé Roussel, Jean‐Baptiste Dory, Oussama J. Mouawad, Thibault Chommaux, Cristian Mocuta, Dominique Thiaudière, Laurent Vila, Françoise Hippert, Pierre Noé   +14 more
wiley   +1 more source

Supramolecular Assembly of Stepped‐Persistent ROS Nanogenerator for Sustained Tumor Immunotherapy

Advanced Science, EarlyView.
ROS catalytic systems often fail to achieve both effective tumor elimination and persistent immune activation due to their monotonous ROS production profiles. A stepped‐persistent ROS nanogenerator was developed by supramolecularly assembling multiple ROS generation modules within a nanofiber structure to simultaneously extend ROS generation duration ...
Zhenqiang Wang, Ming Qin, Wenjing Lai, Shiwen Chen, Fengling Wang, Dandan Xie, Maohua Chen, Changpeng Hu, Kui Wang, Rong Zhang, Guobing Li   +10 more
wiley   +1 more source

A Dual‐Memory Ferroelectric Transistor Emulating Synaptic Metaplasticity for High‐Speed Reservoir Computing

Advanced Electronic Materials
The exponential growth of edge artificial intelligence demands material‐focused solutions to overcome energy consumption and latency limitations when processing real‐time temporal data.
Yifan Wang, Muhammad Sakib Shahriar, Salma Soliman, Noah Vaillancourt, Lance Fernandes, Andrea Padovani, Asif Islam Khan, Md Sakib Hasan, Raisul Islam   +8 more
doaj   +1 more source

Neuromorphic Near‐Sensor and In‐Sensor Computing Enabled by Next‐Generation Material‐Based Sensors

Advanced Science, EarlyView.
This Review presents a structural framework that classifies neuromorphic sensing into near‐sensor and in‐sensor architectures, clarifying physical coupling between sensing and computation. The framework connects neural and synaptic device functions with recent advances in optical, mechanical, and chemical sensing, compares energy consumption and ...
Su Yeon Jung, Gwang Ya Kim, Sejin Kim, Hyunjong Seo, Se Gi Lee, Sang Min Won, Dongjoon Rhee, Joohoon Kang   +7 more
wiley   +1 more source

Electrical Re-Writable Non-Volatile Memory Device based on PEDOT:PSS Thin Film. [PDF]

Micromachines (Basel), 2020
Salaoru I, Pantelidis CC.
europepmc   +1 more source

Impurity Tolerance in LiFePO4 Cathodes: Contrasting Structural, Electronic, and Electrochemical Roles of Residual Ni and Cr

Advanced Science, EarlyView.
Impurity tolerance in LiFePO4 cathodes varies strongly with impurity type and content. Low Ni levels are accommodated within the lattice with minimal structural disruption, whereas higher Ni contents introduce antisite disorder. In contrast, Cr impurities segregate from the LiFePO4 framework, blocking lithium‐ion pathways and leading to inferior ...
Minjin Kim, Hyerin Jeon, Jinhee Lee, Jinsub Choi   +3 more
wiley   +1 more source

Ferroelectric-like Behavior Originating from Oxygen Vacancy Dipoles in Amorphous Film for Non-volatile Memory. [PDF]

Nanoscale Res Lett, 2020
Peng Y, Han G, Liu F, Xiao W, Liu Y, Zhong N, Duan C, Feng Z, Dong H, Hao Y.   +9 more
europepmc   +1 more source