Results 101 to 110 of about 11,806,743 (291)

Emerging horizons in phase-change materials for non-volatile memory [PDF]

Phase Change Memory (PCM) technology, particularly utilizing GeTe-based materials, has emerged as a compelling alternative to traditional nonvolatile memory systems, offering significant advancements in speed, scalability, and endurance.
Lei Chen, Le, Yuqiao, Liu, Xingpeng, Zhang, Fabi, Chen, Lei, Haiou Li, Fabi Zhang, Min Hong, Chen, Yan, Xingpeng Liu, Hu, XinXin, Hong, Min, Liu, Haisong, Chengyan Liu, Peng, Ying, Yan Chen, Li, Haiou, Ying Peng, Sun, Tangyou, Yuqiao Le, Liu, Chengyan, Tangyou Sun, XinXin Hu, Haisong Liu   +23 more
core   +1 more source

Weak In‐Plane Ferromagnetism and Electronic Nematicity in the Distorted Triple‐Q Magnetic Phase of Co1/3TaS2

Advanced Materials, EarlyView.
Co1/3TaS2${\rm Co}_{1/3}{\rm TaS}_{2}$ hosts a triple‐Q noncoplanar antiferromagnetic state with coexisting Z3${\rm Z}_3$ electronic nematicity. We report rotational hysteresis observed in both magnetoresistance and magnetic torque, revealing strongly pinned in‐plane weak ferromagnetic moments in the triple‐Q phase and the magnetism‐driven nature of ...
Joonyoung Choi, Woonghee Cho, Pyeongjae Park, Woun Kang, Je‐Geun Park, Younjung Jo   +5 more
wiley   +1 more source

Force‐Triggered Non‐Volatile Multilevel Mechano‐Optical Memory System for Logic Computation and Image Recognition

Advanced Science
In the big data era, sensing multi‐modal information in memory is highly demanded for the sake of artificial intelligence applications to overcome the limitations of the von Neumann architecture.
Jiaxing Guo, Feng Guo, Hang Yang, Tianhong Zhou, Xiaona Du, Rui Gao, Haisheng Chen, Minghao Hu, Weiwei Liu, Yang Zhang, Dong Tu, Jianhua Hao   +11 more
doaj   +1 more source

Duty to Delete on Non-Volatile Memory

CoRR, 2017
3 pages, 8 ...
Na-Young Ahn, Dong Hoon Lee 0001
openaire   +3 more sources

Resistive non-volatile memory devices

, 2009
The review provides a survey of non-volatile, highly scalable memory devices which are based on redox phenomena controlling the resistance of nanoscale memory cells. The classification of the memory effects, the understanding of the underlying mechanisms,
Waser, R., Waser, Rainer
core   +1 more source

Soft Skins With Reversible Thickness Morphing: Materials, Mechanisms, and Applications

Advanced Materials, EarlyView.
Evolution of electronic skin (e‐skin) technologies toward adaptive, multifunctional soft skins. Phase I highlights early rigid and discrete sensory interfaces. Phase II shows the transition toward flexible, stretchable, and large‐area e‐skin. Phase III captures the emergence of computational e‐skin.
Oliver Ozioko, Chiamaka Akah, Ravinder Dahiya   +2 more
wiley   +1 more source

Sustainable Poly(Lactic Acid)/Graphene Oxide Bioelectronic Platform for Neurotransmitters Sensing and Tunable Stimulation of Astrocytes

Advanced Materials, EarlyView.
This work introduces sustainable PLA/graphene oxide bioelectronic interfaces featuring electrodes with tunable conductivity and strong electrocatalytic performance. These platforms were used to implement a new method for tuning astrocyte Ca2+ signaling and for the efficient detection of key biomarkers.
Alessandra Scidà, Giulia Cazzador, Roberta Fabbri, Matteo Calosi, Alessandro Silvestri, Andrea Candini, Fabiola Liscio, Franco Corticelli, Aikaterini Konstantoulaki, Andrea D'Iorio, Marco Caprini, Vincenzo Palermo, Monica Bertoldo, Valentina Benfenati, Chiara Zanardi, Emanuele Treossi   +15 more
wiley   +1 more source

TCAD Simulation Studies on Ultra-Low-Power Non-Volatile Memory. [PDF]

Micromachines (Basel), 2023
Xu Z, Bi J, Liu M, Zhang Y, Chen B, Zhang Z.   +5 more
europepmc   +1 more source

Polypyridyl chromium(III) complexes for non-volatile memory application: impact of the coordination sphere on memory device performance

, 2018
Molecular non-volatile memory devices are deemed to offer remarkable features such as low-cost, high retention times and low power consumption that could possibly catapult their implementation over the contemporary silicon-based devices.
Roy, V.A.L., Kandasamy, Balamurugan, Zhou, Li, Li Zhou, Chi-Chiu Ko, Xu, Zongxiang, V. A. L. Roy, Ganesamoorthi Ramar, Su-Ting Han, Shun-Cheung Cheng, Zongxiang Xu, Ramar, Ganesamoorthi, Ko, Chi-Chiu, Han, Su-Ting, Cheng, Shun-Cheung, Balamurugan Kandasamy, Shishir Venkatesh, Venkatesh, Shishir   +17 more
core   +1 more source

Noise‐Tunable Memristor Enabling Programmable Probabilistic Neurons for Frequency‐Selective Time‐Series Signal Encoding

Advanced Materials, EarlyView.
Memristors offer tunable resistance and intrinsic instability, making them promising tunable noise sources. We propose a spiking‐rate‐programmable probabilistic neuron using a Ru/TaOx/Pt memristor, where resistance‐dependent noise enables frequency‐selective encoding.
Do Hoon Kim, Seoeun Jang, Hakseung Rhee, Min Gu Lee, Daehee Kim, Taewook Go, Woon Hyung Cheong, Hanchan Song, Kyung Min Kim   +8 more
wiley   +1 more source