Results 91 to 100 of about 13,760,510 (244)

Application level evidence from volatile memory

open access: yes, 2009
This paper details an investigation aimed at identifying the application level evidence that can be extracted from volatile memory. Application level evidence indicates how the user is using an application when a memory image is collected.
Olajide, F., Savage, N.
core   +2 more sources

The 3D Monolithically Integrated Hardware Based Neural System with Enhanced Memory Window of the Volatile and Non‐Volatile Devices

open access: yesAdvanced Science
3D neuromorphic hardware system is first demonstrated in neuromorphic application as on‐chip level by integrating array devices with CMOS circuits after wafer bonding (WB) and interconnection process.
Yu‐Rim Jeon   +4 more
doaj   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

open access: yesAdvanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj   +8 more
wiley   +1 more source

Toward Sub-1V FRAM: Ultra-low Field Operation and Excellent Retention (10y/85°C) by Stack Engineering

open access: yes, 2022
1
T. Werner   +9 more
core  

Weak In‐Plane Ferromagnetism and Electronic Nematicity in the Distorted Triple‐Q Magnetic Phase of Co1/3TaS2

open access: yesAdvanced Materials, EarlyView.
Co1/3TaS2${\rm Co}_{1/3}{\rm TaS}_{2}$ hosts a triple‐Q noncoplanar antiferromagnetic state with coexisting Z3${\rm Z}_3$ electronic nematicity. We report rotational hysteresis observed in both magnetoresistance and magnetic torque, revealing strongly pinned in‐plane weak ferromagnetic moments in the triple‐Q phase and the magnetism‐driven nature of ...
Joonyoung Choi   +5 more
wiley   +1 more source

Layered Spin‐Crossover Metal‐Organic Frameworks for Light‐Induced Control of Two‐Dimensional Quantum Materials

open access: yesAdvanced Materials, EarlyView.
Spin‐crossover metal‐organic frameworks (SCO‐MOFs) provide a route to control the electronic and magnetic properties of two‐dimensional quantum materials. By integrating a layered SCO‐MOFs with graphene, CrSBr, and NbSe2 nanodevices, thermally and light induced spin transitions induce strain that reversibly modulates charge transport, magnetic memory ...
Carla Boix‐Constant   +4 more
wiley   +1 more source

MoS2/Graphene Floating‐Gate Transistor Toward Non‐Volatile Memory and High‐Precision Synaptic Operations

open access: yesAdvanced Electronic Materials
Molybdenum disulfide (MoS2) and graphene, as two significant members of the two‐dimensional family, have garnered considerable attention for enhanced non‐volatile memory (NVM) applications. Nonetheless, the synaptic behavior of the MoS2/graphene floating‐
Md. Ibrahim Ahmed, Sharnali Islam
doaj   +1 more source

SAP HANA adoption of non-volatile memory

open access: yes, 2017
Non-Volatile RAM (NVRAM) is a novel class of hardware technology which is an interesting blend of two storage paradigms: byte-addressable DRAM and block-addressable storage (e.g. HDD/SSD).
Daniel Booss   +15 more
core   +1 more source

Advances in Bio‐Integrated Edge Computing Systems for Smart and Connected Health

open access: yesAdvanced Materials, EarlyView.
This review explores advances in bio‐integrated edge computing for healthcare, focusing on co‐designing computing, sensing, and energy strategies to overcome integration and power challenges for optimized, decentralized operation. ABSTRACT Recent advances in bio‐integrated healthcare technologies have enabled continuous, high‐resolution monitoring and ...
Gyuwon Kim   +4 more
wiley   +1 more source

Thickness‐Defined Transport Regime Toward Near‐Ideal Area‐Type Switching

open access: yesAdvanced Materials, EarlyView.
By thinning the oxide layer, memristors pass from diode‐like and battery‐effect‐dominated behavior toward eventual short‐circuit failure. Within the intermediate 5–6 nm window, they reach a near‐ideal analog area‐type switching regime, featuring symmetric hysteresis, area‐dependent conductance, and continuous linear programming of HRS and LRS with ...
Cuo Wu   +12 more
wiley   +1 more source

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