Results 71 to 80 of about 128,528 (304)

Localized Metal Doping Effect on Switching Behaviors of TaOx-based RRAM Device

, 2016
Memory unit, especially the non-volatile memory (NVM), is an indispensable component in a high performance electronic systems which aims at efficient information processing and storage.
Fang, Yichen, Zhizhen Yu, Yu, Zhizhen, Wang, Yangyuan, Yimao Cai, Cai, Yimao, Ru Huang, Yangyuan Wang, Yichen Fang, Zongwei Wang, Jian Kang, Yang, Xue, Wang, Zongwei, Huang, Ru, Kang, Jian, Xue Yang   +15 more
core   +1 more source

Espresso

ACM SIGPLAN Notices, 2018
Fast, byte-addressable non-volatile memory (NVM) embraces both near-DRAM latency and disk-like persistence, which has generated considerable interests to revolutionize system software stack and programming models. However, it is less understood how NVM can be combined with managed runtime like Java virtual machine (JVM) to ease persistence management ...
Mingyu Wu 0001, Ziming Zhao 0003, Haoyu Li, Heting Li, Haibo Chen 0001, Binyu Zang, Haibing Guan   +6 more
openaire   +2 more sources

Chiral Phase Change Nanomaterials

Advanced Functional Materials, EarlyView.
This work demonstrates reversible, non‐volatile phase transitions in chiral Ge2${\rm Ge}_2$Sb2${\rm Sb}_2$Te5${\rm Te}_5$ (GST) nanohelices for high‐speed optical modulation of chirality and dynamic control of the state of polarization (SOP). The chiral nanostructures are fabricated using a highly directional, wafer‐scale physical vapor deposition ...
Joshua A. Burrow, Md Shah Alam, Riad Yahiaoui, Evan M. Smith, Ryan Laing, Jules Gardener, Thomas A. Searles, Piyush J. Shah, Shivashankar Vangala, Joshua R. Hendrickson, Andrew M. Sarangan, Imad Agha   +11 more
wiley   +1 more source

Non‐volatile Sliding Ferroelectric Memory Effect in Ultrathin γ‐InSe

Advanced Electronic Materials
Ferroelectrics exhibit field‐tunable non‐volatile polarization, making them essential for modern electronic devices, including memories and sensors. Conventional ferroelectric transistors typically suffer from limited memory windows and poor fatigue ...
Yue Li, Luoyang Ding, Zhixiong Li, Feng Chen, Xiaoyao Weng, Min Zhu, Siyuan Wan, Yangbo Zhou   +7 more
doaj   +1 more source

Emerging horizons in phase-change materials for non-volatile memory [PDF]

Phase Change Memory (PCM) technology, particularly utilizing GeTe-based materials, has emerged as a compelling alternative to traditional nonvolatile memory systems, offering significant advancements in speed, scalability, and endurance.
Lei Chen, Le, Yuqiao, Liu, Xingpeng, Zhang, Fabi, Chen, Lei, Haiou Li, Fabi Zhang, Min Hong, Chen, Yan, Xingpeng Liu, Hu, XinXin, Hong, Min, Liu, Haisong, Chengyan Liu, Peng, Ying, Yan Chen, Li, Haiou, Ying Peng, Sun, Tangyou, Yuqiao Le, Liu, Chengyan, Tangyou Sun, XinXin Hu, Haisong Liu   +23 more
core   +1 more source

Electro‐Steric Ion Confinement in Polyelectrolyte Networks for Robust Nonvolatile Artificial Synapse

Advanced Functional Materials, EarlyView.
Polyelectrolyte stoichiometry governs ion transport and retention in electrolyte‐gated synaptic transistors. A PSS‐rich network creates electro‐steric ion confinement that suppresses ion back‐diffusion and stabilizes channel doping, enabling robust nonvolatile synaptic memory, linear weight updates, and low‐energy operation.
Donghwa Lee, Jinbo Kim, Myeongjin An, Jisoo Park, Junho Sung, Eunsung Hwang, Suhwan Seok, Seong‐Min Bak, Jeonghun Kim, Eunho Lee   +9 more
wiley   +1 more source

Characterization and physical modeling of endurance in embedded non-volatile memory technology [PDF]

, 2011
Transient and endurance mechanisms in highperformance embedded non-volatile memory flash devices are investigated in detail. An extraction methodology combining measurements on equivalent transistors and flash cells is proposed to discriminate the ...
Jaouen, H., Herve Jaouen, Yusuf Leblebici, Garetto, D., Rideau, D., Denis Rideau, Leblebici, Y., Dornel, E., Manceau, J.-P., Alexandre Schmid, Alban Zaka, Zaka, A., Davide Garetto, Erwan Dornel, William F. Clark, Jean-Philippe Manceau, Schmid, A., Clark, W. F.   +17 more
core   +1 more source

Oxidized MoS2‐Based Multifunctional Memristive Hardware for Energy‐Efficient mmWave Signal Processing and In‐Memory Matrix Multiplication

Advanced Functional Materials, EarlyView.
Thermally oxidized MoS2‐based radio‐frequency switches enable a multifunctional platform that unifies broadband RF switching and in‐memory computation. The device achieves a cutoff frequency of 33.2 THz with high energy efficiency and supports hardware‐aware signal processing.
Juho Son, Changwoo Pyo, Sungmoon Park, Yoongi Cho, Seungchan Lee, Myungsoo Kim   +5 more
wiley   +1 more source

ELECTRICAL CHARACTERIZATION, PHYSICS, MODELING AND RELIABILITY OF INNOVATIVE NON-VOLATILE MEMORIES

, 2012
Enclosed in this thesis work it can be found the results of a three years long research activity performed during the XXIV-th cycle of the Ph.D. school in Engineering Science of the Università degli Studi di Ferrara. The topic of this work is concerned
Zambelli, Cristian
core  

Ferroelectric Quantum Dots for Retinomorphic In‐Sensor Computing

Advanced Materials, EarlyView.
This work has provided a protocol for fabricating retinomorphic phototransistors by integrating ferroelectric ligands with quantum dots. The resulting device combines ferroelectricity, optical responsiveness, and low‐power operation to enable adaptive signal amplification and high recognition accuracy under low‐light conditions, while supporting ...
Tingyu Long, Huanyu Zhou, Jaewan Ko, Hongwei Tan, Jaemin Lim, Yanfei Zhao, Daehan Kang, Eojin Yoon, Gyeong‐Tak Go, Somin Kim, Seung‐Woo Lee, Chan‐Yul Park, Hyojun Choi, Hyeran Kim, Hyung Joong Yun, Sung Hyuk Park, Kwan Sik Park, Jeong Woo Park, Mungeun Kim, Yong Soo Cho, Ho Won Jang, Wenqiang Yang, Min Hyuk Park, Wan Ki Bae, Sebastiaan van Dijken, Joona Bang, Tae‐Woo Lee   +26 more
wiley   +1 more source