Results 61 to 70 of about 19,012 (258)

All-silicon non-volatile optical memory based on photon avalanche-induced trapping

open access: yesCommunications Physics
Implementing on-chip non-volatile optical memories has long been an actively pursued goal, promising significant enhancements in the capability and energy efficiency of photonic integrated circuits.
Yuan Yuan   +9 more
doaj   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

open access: yesAdvanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj   +8 more
wiley   +1 more source

SwapX: An NVM-Based Hierarchical Swapping Framework

open access: yesIEEE Access, 2017
Non-volatile memory (NVM) provides persistence with dynamic random access memory (DRAM)-like performance. This paper presents SwapX, an NVM-based hierarchical swapping framework for guest operating systems (OSs) in virtual machines (VMs).
Guoliang Zhu   +5 more
doaj   +1 more source

Monolithic 3D‐Integrated All‐Solid Ion‐Gated Carbon Nanotube Transistors With Tunable Ionic Conductance for Multi‐Timescale Reservoir Computing

open access: yesAdvanced Materials, EarlyView.
A dual‐timescale reservoir based on monolithically 3D (M3D)‐integrated CNT solid ion‐gated transistors is demonstrated. Tunable ionic dynamics and pulse‐engineered operation enable linear and symmetric synaptic updates. The M3D‐integrated array achieves robust temporal encoding and accurate classification of moving MNIST sequences, highlighting its ...
Haksoon Jung   +9 more
wiley   +1 more source

Weak In‐Plane Ferromagnetism and Electronic Nematicity in the Distorted Triple‐Q Magnetic Phase of Co1/3TaS2

open access: yesAdvanced Materials, EarlyView.
Co1/3TaS2${\rm Co}_{1/3}{\rm TaS}_{2}$ hosts a triple‐Q noncoplanar antiferromagnetic state with coexisting Z3${\rm Z}_3$ electronic nematicity. We report rotational hysteresis observed in both magnetoresistance and magnetic torque, revealing strongly pinned in‐plane weak ferromagnetic moments in the triple‐Q phase and the magnetism‐driven nature of ...
Joonyoung Choi   +5 more
wiley   +1 more source

Force‐Triggered Non‐Volatile Multilevel Mechano‐Optical Memory System for Logic Computation and Image Recognition

open access: yesAdvanced Science
In the big data era, sensing multi‐modal information in memory is highly demanded for the sake of artificial intelligence applications to overcome the limitations of the von Neumann architecture.
Jiaxing Guo   +11 more
doaj   +1 more source

TCAD Simulation Studies on Ultra-Low-Power Non-Volatile Memory. [PDF]

open access: yesMicromachines (Basel), 2023
Xu Z   +5 more
europepmc   +1 more source

Field‐Programmed Anisotropy in Magneto‐Piezoelectric Composites for Material‐Encoded Mechanoperception

open access: yesAdvanced Materials, EarlyView.
Field‐programmed anisotropy imparts material‐level intelligence to soft composites. Magnetic torque dynamics drive magneto‐piezoelectric nanowires from random dispersion into deterministic axial alignment. The resulting hierarchical percolation networks confine electromechanical coupling to specific axes and intrinsically decouple superposed force ...
Yubin Kim   +9 more
wiley   +1 more source

A reliable non‐volatile in‐memory computing associative memory based on spintronic neurons and synapses

open access: yesEngineering Reports
This article introduces an innovative non‐volatile associative memory (AM) that leverages spintronic synapses, employing magnetic tunnel junctions (MTJ) in conjunction with neurons constructed using carbon nanotube field‐effect transistors (CNTFETs). Our
Mahan Rezaei   +3 more
doaj   +1 more source

Reliable Sub-Nanosecond Switching of a Perpendicular SOT-MRAM Cell without External Magnetic Field [PDF]

open access: yesJournal of Systemics, Cybernetics and Informatics, 2018
The steady increase in performance and speed of modern integrated circuits is continuously supported by constant miniaturization of complementary metal-oxide semiconductor (CMOS) devices.
Viktor Sverdlov   +2 more
doaj  

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