Results 61 to 70 of about 13,760,510 (244)

Atomic‐Scale Visualization of Topotactic Resistive Switching in Epitaxial La0.5Sr0.5CoOx Neuromorphic Memristors

Advanced Functional Materials, EarlyView.
Forming‐free epitaxial Pt/La0.5Sr0.5CoOx (LSCO)/La0.5Sr0.5MnO3 (LSMO) memristors exhibit heterogeneous and partially reversible topotactic switching involving brownmillerite (BM)‐, Grenier (GN)‐like‐, and perovskite (PV)‐like configurations. Atomic‐resolution scanning transmission electron microscopy and in situ transmission electron microscopy resolve
Zi‐Qin Hong, Yen‐Jung Chen, Shih‐Chao Chang, Jui‐yuan Chen, Jan‐Chi Yang, Wen‐Wei Wu   +5 more
wiley   +1 more source

Magneto‐Ionic Devices With Polymer‐Based Electrolytes

Advanced Functional Materials, EarlyView.
Polymer electrolytes are introduced for magneto‐ionic devices based on hydroxide and hydrogen ions. The magneto‐ionic effect results in a pronounced voltage‐controlled variation of coercivity in both devices. The switching speed is in the range of 100 ms.
Markus Gößler, Richard Weber, Michael Sommer, Karin Leistner   +3 more
wiley   +1 more source

A non-volatile cryogenic random-access memory based on the quantum anomalous Hall effect

Scientific Reports, 2021
The interplay between ferromagnetism and topological properties of electronic band structures leads to a precise quantization of Hall resistance without any external magnetic field.
Shamiul Alam, Md Shafayat Hossain, Ahmedullah Aziz   +2 more
doaj   +1 more source

Effect of dead layer on ferroelectric HZO films for low thermal budget

, 2022
1
HWANG, HYUNSANG, 오승열
core  

GeS as an Emerging OTS Material: Atomic Structure and Modeling of ON/OFF Switching

Advanced Functional Materials, EarlyView.
The structural puzzle of glassy GeS, an advanced memory‐selector material, has finally been disentangled, revealing a patchwork of mixed tetrahedral and trigonal species. Under a high electric field, over‐ and under‐coordinated Ge and S defects, together with three‐membered rings, form an interconnected network associated with localized and extended ...
Andrey Tverjanovich, Jörg C. Neuefeind, Chris J. Benmore, Daniele Fontanari, Anton Sokolov, Maxim Khomenko, Shinji Kohara, Aleksei Bytchkov, Takeshi Usuki, Maria Bokova, Mohammad Kassem, Pascal Masselin, Mariana Milochova, Eugene Bychkov   +13 more
wiley   +1 more source

All-silicon non-volatile optical memory based on photon avalanche-induced trapping

Communications Physics
Implementing on-chip non-volatile optical memories has long been an actively pursued goal, promising significant enhancements in the capability and energy efficiency of photonic integrated circuits.
Yuan Yuan, Yiwei Peng, Stanley Cheung, Wayne V. Sorin, Sean Hooten, Zhihong Huang, Di Liang, Jiuyi Zhang, Marco Fiorentino, Raymond G. Beausoleil   +9 more
doaj   +1 more source

Hardware sollution about power fail protective mechanism of non volatile memory

Dianzi Jishu Yingyong, 2019
The principle of data power failure protection for non-volatile memory(NVM) of security chip is analyzed. Considering that the processing speed of software can not meet the performance requirements of security chip for data storage, this paper proposes a
Su Wei, Feng Xi, Zhou Zhimei, Hu Yi, Tang Xiaoke   +4 more
doaj   +1 more source

Neuromorphic Devices for Extreme Environments: State‐Variable Reliability and Stabilization Strategies

Advanced Functional Materials, EarlyView.
Neuromorphic devices for extreme environments are interpreted through the physical states that store and process information. Radiation, temperature extremes, and vacuum can perturb vacancies, filaments, trapped charges, polarization, interfaces, and readout signals.
Taehyun Park, Geon Park, Junhyung Cho, Jaechan Song, Wangmyung Choi, Jaehyun Hur, Nicola Gasparini, Hocheon Yoo   +7 more
wiley   +1 more source

Bioorganic nanodots for non-volatile memory devices

APL Materials, 2013
In recent years we are witnessing an intensive integration of bio-organic nanomaterials in electronic devices. Here we show that the diphenylalanine bio-molecule can self-assemble into tiny peptide nanodots (PNDs) of ∼2 nm size, and can be embedded into ...
Nadav Amdursky, Gil Shalev, Amir Handelman, Simon Litsyn, Amir Natan, Yakov Roizin, Yossi Rosenwaks, Daniel Szwarcman, Gil Rosenman   +8 more
doaj   +1 more source

Improving the storage performance of smartphones through journaling in non-volatile memory

, 2017
journaling; lightweight database; non-volatile memory; Smartphone; storage ...
반효경
core   +1 more source