Results 41 to 50 of about 19,012 (258)

Multi-level characteristics of TiOx transparent non-volatile resistive switching device by embedding SiO2 nanoparticles

Scientific Reports, 2021
TiOx-based resistive switching devices have recently attracted attention as a promising candidate for next-generation non-volatile memory devices. A number of studies have attempted to increase the structural density of resistive switching devices.
Sera Kwon, Min-Jung Kim, Kwun-Bum Chung
doaj   +1 more source

Implantable Ionic Memristors Based on Natural Polymer Heterojunctions

Advanced Functional Materials, EarlyView.
We report an implantable natural polymer‐based ionic memristor composed of hyaluronic acid, chitosan, and PDMS. The device achieved 98.94% accuracy in MNIST classification while reducing training time by 36.8% compared with a conventional artificial neural network (ANN).
Dong‐yup Lee, Byung Ik Park, Gihyeon Yim, Hyunjae Yoo, Sangjun Ma, Jundong Park, Jeong‐Yun Sun   +6 more
wiley   +1 more source

NVPE: An FPGA-Based Non-Volatile Processor Emulator for Intermittent Computing

Proceedings
Research on novel memory storage devices that occupy less physical area and are compatible with CMOS processes, such as resistive RAM, has led to the interesting study of non-volatile compute memories and devices.
Idris Somoye, Kevin Yang
doaj   +1 more source

Effect of Optical Illumination on Bubble Nanodomains

Advanced Functional Materials, EarlyView.
Stable surface‐confined nanoscale bubble domains are created and manipulated in PMN‐PT single crystals. Under above‐bandgap illumination, these bubble nanodomains remain unchanged. However, upon illumination cessation, they rapidly expand to switch the entire crystal surface, due to the accumulation of a large reservoir of electrons at the crystal ...
Haoze Zhang, Anju Ahlawat, Richard F. Webster, Yunlong Sun, Dinesh Shukla, Danyang Wang, Jan Seidel, Alexei Gruverman, Pankaj Sharma   +8 more
wiley   +1 more source

Low-power and area-efficient memristor based non-volatile D latch and flip-flop: Design and analysis.

PLoS ONE
In recent years, non-volatile memory elements have become highly appealing for memory applications to implement a new class of storage memory that could replace flash memories in sequential logic applications, with features such as compactness, low power,
Haroon Rasheed S, Rajeev Pankaj Nelapati
doaj   +1 more source

Multimode Oxide‐Based Optoelectronic Memtransistor for In‐Sensor Vision Processing

Advanced Functional Materials, EarlyView.
A multimode optoelectronic memtransistor (OEMT) is demonstrated for vision explainable artificial intelligence (VXAI) hardware. By integrating optical sensing, electrical masking, and non‐volatile memory, the device enables key operations required for generating saliency information.
Min Gu Lee, Geunyoung Kim, Hwa Young Kim, Do Hoon Kim, Hanchan Song, Huisu Noh, Jungwan Noh, Seungwoo Lee, Sang‐Hee Ko Park, Himchan Cho, Kyung Min Kim   +10 more
wiley   +1 more source

Overview of Phase-Change Materials Based Photonic Devices

IEEE Access, 2020
Non-volatile storage memory is widely considered to be one of the most promising candidates to replace dynamic random access memory and even static random access memory.
Jianmin Wang, Lei Wang, Jun Liu
doaj   +1 more source

Non-volatile optoelectronic memory based on a photosensitive dielectric

Nature Communications, 2023
Recently, the optoelectronic memory is capturing growing attention due to its integrated function of sense and memory as well as multilevel storage ability.
Rui Zhu, Huili Liang, Shangfeng Liu, Ye Yuan, Xinqiang Wang, Francis Chi-Chung Ling, Andrej Kuznetsov, Guangyu Zhang, Zengxia Mei   +8 more
doaj   +1 more source

Chemically Fueled Systems Chemistry Across Length Scales

Advanced Functional Materials, EarlyView.
Chemically fueled reaction cycles regulate processes through single and multiple catalytic sites on the molecular and assembly scale. This gives rise to unique kinetically controlled properties/functions like spatio‐temporal catalysis, oscillations, optical properties, and perform work.
Brigitte A. K. Kriebisch, Job Boekhoven
wiley   +1 more source

Non‐volatile Sliding Ferroelectric Memory Effect in Ultrathin γ‐InSe

Advanced Electronic Materials
Ferroelectrics exhibit field‐tunable non‐volatile polarization, making them essential for modern electronic devices, including memories and sensors. Conventional ferroelectric transistors typically suffer from limited memory windows and poor fatigue ...
Yue Li, Luoyang Ding, Zhixiong Li, Feng Chen, Xiaoyao Weng, Min Zhu, Siyuan Wan, Yangbo Zhou   +7 more
doaj   +1 more source