Results 41 to 50 of about 11,806,743 (291)

Volatile aldehydes in libraries and archives [PDF]

, 2010
Volatile aldehydes are produced during degradation of paper-based materials. This may result in their accumulation in archival and library repositories. However, no systematic study has been performed so far.
Kolar, J., de Bruin, G., Irena Kralj Cigić, Gerrit de Bruin, Fenech, Ann, Levart, A., Fenech, A., Kralj Cigić, I., Levart, Alenka, Jana Kolar, Ntanos, Konstantinos, May Cassar, Cigic, Irena Kralj, Gibson, L.T., Ntanos, K., Kolar, Jana, Matija Strlič, Cassar, M., Konstantinos Ntanos, Gibson, Lorraine T., Lorraine T. Gibson, de Bruin, Gerrit, Cassar, May, Ann Fenech, Alenka Levart, Strlič, M.   +25 more
core   +5 more sources

Building Emulation Framework for Non-Volatile Memory

IEEE Access, 2017
Emerging non-volatile memory (NVM) requires refactoring of the hardware and software stacks used on current computer systems. Modern researchers typically rely on simulators to test their innovations.
Guoliang Zhu, Kai Lu, Xiaoping Wang, Xu Zhou, Zhan Shi   +4 more
doaj   +1 more source

A Thermally Programmable ECRAM for Neuromorphic Computing

, 2022
1
HWANG, HYUNSANG, NIKAM, REVANNATH, LEE, LEEJONGWON   +2 more
core  

Electrical analysis of unbalanced Flash memory array construction effects and their impact on performance and reliability

, 2022
S.72-76In our work we present statistical methods and new memory array analysis approaches for decomposition and assessment of contributors to the Vth distribution widening.
Hoffmann, R., Seidel, K., Müller, T., Löhr, D.-A., Melde, T., Paul, J., Brandt, T., Czernohorsky, M., Beyer, V.   +8 more
core   +1 more source

ELECTRICAL CHARACTERIZATION, PHYSICS, MODELING AND RELIABILITY OF INNOVATIVE NON-VOLATILE MEMORIES [PDF]

, 2012
Enclosed in this thesis work it can be found the results of a three years long research activity performed during the XXIV-th cycle of the Ph.D. school in Engineering Science of the Università degli Studi di Ferrara. The topic of this work is concerned
Zambelli, Cristian
core  

Toward Sub-1V FRAM: Ultra-low Field Operation and Excellent Retention (10y/85°C) by Stack Engineering

, 2022
1
T. Werner, F. Koushan, A. Kashir, HWANG, HYUNSANG, SEUNYEOL, OH, R. Gautam, T. Schenk, M. Schuster, JANG, HO JUNG, S. Mueller   +9 more
core  

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Design of non-destructive single-sawtooth pulse based readout for STT-RAM by NVM-SPICE

, 2012
Spin-transfer torque random access memory (STTRAM) is one promising candidate for future non-volatile memory based computing, because of its fast access time, high integration density and non-volatility.
Yang Shang, Hao Yu, Yuhao Wang, Wang, Yuhao, Shang, Yang, Yu, Hao   +5 more
core   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Non-volatile memory storage in tri-layer structures using the intrinsically ferromagnetic semiconductors GdN and DyN

, 2022
We report on the potential use of the intrinsic ferromagnetic rare earth nitride (REN) semiconductors as ferromagnetic electrodes in tunnelling magnetoresistance and giant magnetoresistance device structures for non-volatile memory storage devices.
Benjamin Ruck (8509461), S Devese (15855797), Simon Granville (8509239), C Pot (15855800), Natalie Plank (8509686), William Holmes-Hewett (8512113), H Joe Trodahl (15855803), Franck Natali (8509641)   +7 more
core   +2 more sources