Results 41 to 50 of about 128,528 (304)

Spatially Distributed Ramp Reversal Memory in VO2

Advanced Electronic Materials, 2023
Ramp‐reversal memory has recently been discovered in several insulator‐to‐metal transition materials where a non‐volatile resistance change can be set by repeatedly driving the material partway through the transition.
Sayan Basak, Yuxin Sun, Melissa Alzate Banguero, Pavel Salev, Ivan K. Schuller, Lionel Aigouy, Erica W. Carlson, Alexandre Zimmers   +7 more
doaj   +1 more source

Write-limited sorts and joins for persistent memory [PDF]

, 2014
To mitigate the impact of the widening gap between the memory needs of CPUs and what standard memory technology can deliver, system architects have introduced a new class of memory technology termed persistent memory. Persistent memory is byteaddressable,
Viglas, Stratis
core   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Hardware sollution about power fail protective mechanism of non volatile memory

Dianzi Jishu Yingyong, 2019
The principle of data power failure protection for non-volatile memory(NVM) of security chip is analyzed. Considering that the processing speed of software can not meet the performance requirements of security chip for data storage, this paper proposes a
Su Wei, Feng Xi, Zhou Zhimei, Hu Yi, Tang Xiaoke   +4 more
doaj   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Bioorganic nanodots for non-volatile memory devices

APL Materials, 2013
In recent years we are witnessing an intensive integration of bio-organic nanomaterials in electronic devices. Here we show that the diphenylalanine bio-molecule can self-assemble into tiny peptide nanodots (PNDs) of ∼2 nm size, and can be embedded into ...
Nadav Amdursky, Gil Shalev, Amir Handelman, Simon Litsyn, Amir Natan, Yakov Roizin, Yossi Rosenwaks, Daniel Szwarcman, Gil Rosenman   +8 more
doaj   +1 more source

Extending Non-Volatile Operation to DRAM Cells

IEEE Access, 2013
This paper deals with the design and evaluation of novel dynamic random access memory (DRAM) cells that have an oxide-based resistive element added for non-volatile operation.
Wei Wei, Kazuteru Namba, Fabrizio Lombardi   +2 more
doaj   +1 more source

Self-rated everyday prospective memory abilities of cigarette smokers and non-smokers: a web based study

, 2005
The present study examined self-ratings of two aspects of everyday memory performance: long-term prospective memory—measured by the prospective memory questionnaire (PMQ), and everyday memory—measured by the everyday memory questionnaire (EMQ).
Buchanan, Tom, Scholey, Andrew, Parrott, A.C., Ling, J., Heffernan, Tom, Heffernan, T.M., Parrott, Andrew, Scholey, A.B., Rodgers, J., Ling, Jonathan, Rodgers, Jacqui, Buchanan, T.   +11 more
core   +1 more source

FeFET based Logic-in-Memory: an overview

, 2021
International audienceEmerging non-volatile memories are getting new interest in the system design community. They are used to design logic-in-memory circuits and propose alternatives to von-Neuman architectures.
Thomas Mikolajick, Ian O'Connor, Breyer, Evelyn, T, Cedric Marchand, Marchand, Cédric, Slesazeck, Stefan, O'Connor, Ian, Evelyn T. Breyer, Stefan Slesazeck, Mayeul Cantan, Cantan, Mayeul, Mikolajick, Thomas   +11 more
core   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source