Results 31 to 40 of about 19,012 (258)

Spatially Distributed Ramp Reversal Memory in VO2

Advanced Electronic Materials, 2023
Ramp‐reversal memory has recently been discovered in several insulator‐to‐metal transition materials where a non‐volatile resistance change can be set by repeatedly driving the material partway through the transition.
Sayan Basak, Yuxin Sun, Melissa Alzate Banguero, Pavel Salev, Ivan K. Schuller, Lionel Aigouy, Erica W. Carlson, Alexandre Zimmers   +7 more
doaj   +1 more source

Solution‐Processed Two‐Dimensional Indium Oxide on Sodium‐Embedded Alumina for Reconfigurable Optoelectronic Synaptic Transistors

Advanced Functional Materials, EarlyView.
Wafer‐scale two‐dimensioanl In2Se3 oxidized into InOx on sodium‐embedded beta‐alumina enables multifunctional reconfigurable electronics. Sodium ions accumulate within distinct spatial distribution under drain‐controlle and gate‐controlled operation. Drain‐control operation gives controllability of ultraviolet‐driven optoelectronic synaptic conductance
Jinhong Min, Yonghyun Albert Kwon, Hyunbin Kim, Jihyun Kim, Myeongjin Jung, Jaewon Heo, Gwang Ya Kim, Vlastimil Mazanek, Zdeněk Sofer, In Soo Kim, Jeong Ho Cho, Hyesung Park, Sang Min Won, Joohoon Kang   +13 more
wiley   +1 more source

Electrode and Microstructure Dependence of Oxygen Diffusion in Ferroelectric Hafnium Zirconium Oxide Thin Films

Advanced Functional Materials, EarlyView.
Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg, Thomas W. Pfeifer, Chuanzhen Zhou, Yong Kyu Choi, Duk‐Hyun Choe, Patrick E. Hopkins, Jon F. Ihlefeld   +6 more
wiley   +1 more source

Memristive Ferroelectric FET for 1T-1R Nonvolatile Memory With Non-Destructive Readout

IEEE Open Journal of Nanotechnology
Energy-efficient non-volatile memory that supports non-destructive read capabilities is in high demand for random-access memory applications. This article presents the proposal and demonstration of a 1T-1R non-volatile memory cell, which has distinct ...
Roopesh Singh, Shivam Verma
doaj   +1 more source

A survey of persistent index data structures on non-volatile memory

大数据, 2021
With non-volatile memory becoming commercially available, the design and implementation of traditional storage systems need a fundamental change since they can not fully utilize the performance of non-volatile memory.To build a highthroughput, low ...
Yongfeng WANG, Zhiguang CHEN
doaj  

Historical Foundation and Practical Guideline for Ferroelectric Switching Kinetic Studies

Advanced Functional Materials, EarlyView.
The P and U pulses in the conventional PUND measurements are not identical because of the interplay between switching current and the measurement circuit components. This circuit effect can lead to a shift in polarization transients and misinterpreted physics in the switching kinetics.
Yi Liang, Pat Kezer, John T. Heron
wiley   +1 more source

Germanium Twin-Transistor Nonvolatile Memory With FinFET Structure

IEEE Journal of the Electron Devices Society, 2020
Germanium is a promising alternative material for use in advanced technology nodes because it exhibits symmetrical mobility of holes and electrons.
Siao-Cheng Yan, Chong-Jhe Sun, Meng-Ju Tsai, Lun-Chun Chen, Mu-Shih Yeh, Chien-Chang Li, Yao-Jen Lee, Yung-Chun Wu   +7 more
doaj   +1 more source

Chiral Phase Change Nanomaterials

Advanced Functional Materials, EarlyView.
This work demonstrates reversible, non‐volatile phase transitions in chiral Ge2${\rm Ge}_2$Sb2${\rm Sb}_2$Te5${\rm Te}_5$ (GST) nanohelices for high‐speed optical modulation of chirality and dynamic control of the state of polarization (SOP). The chiral nanostructures are fabricated using a highly directional, wafer‐scale physical vapor deposition ...
Joshua A. Burrow, Md Shah Alam, Riad Yahiaoui, Evan M. Smith, Ryan Laing, Jules Gardener, Thomas A. Searles, Piyush J. Shah, Shivashankar Vangala, Joshua R. Hendrickson, Andrew M. Sarangan, Imad Agha   +11 more
wiley   +1 more source

Two Dimensional Parity Check with Variable Length Error Detection Code for the Non-Volatile Memory of Smart Data

Applied Sciences, 2018
This paper proposes a novel technology of memory protection for the Non-Volatile Memory (NVM), applied to smart sensors and smart data. Based on the asymmetry of failure rate between the statuses of bit-0 and bit-1 in the non-volatile memory, as a result
Cihun-Siyong Alex Gong, Yung-Chang Chang, Li-Ren Huang, Chih-Jen Yang, Kung-Ming Ji, Kuen-Long Lu, Jian-Chiun Liou   +6 more
doaj   +1 more source

Advances in Sustainable and Wearable Textile Based Soft Robotics

Advanced Functional Materials, EarlyView.
This Review examines advances in wearable textile‐based soft robotics, focusing on sustainable materials, integrated sensing, and scalable actuation. It discusses manufacturing and system integration across healthcare, assistive robotics, prosthetics, and human–machine interfaces, and highlights key challenges in circular design, including life‐cycle ...
Zahir Abbas, Marzia Dulal, Sophia K. Novoselov, Victoria K. Novoselov, Kostya S. Novoselov, Shaila Afroj, Nazmul Karim   +6 more
wiley   +1 more source