Results 31 to 40 of about 13,760,510 (244)

Design of non-destructive single-sawtooth pulse based readout for STT-RAM by NVM-SPICE

open access: yes, 2012
Spin-transfer torque random access memory (STTRAM) is one promising candidate for future non-volatile memory based computing, because of its fast access time, high integration density and non-volatility.
Yang Shang   +5 more
core   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Non-Volatile Photonic Memory Based on a SAHAS Configuration

open access: yesIEEE Photonics Journal, 2021
The non-volatile memory is a crucial functionality for a wide range of applications in photonic integrated circuits, however, it still poses a challenge in silicon photonic technology.
Irene Olivares   +2 more
doaj   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner   +14 more
wiley   +1 more source

Energy-efficient magnetoelastic non-volatile memory [PDF]

open access: yes, 2014
We propose an improved scheme for low-power writing of binary bits in non-volatile (multiferroic) magnetic memory with electrically generated mechanical stress. Compared to an earlier idea [N. Tiercelin et al., J. Appl. Phys.
Biswas, Ayan K.   +2 more
core   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand   +13 more
wiley   +1 more source

Coexistence of non-volatile and volatile characteristics of the Pt/TaOx/TiN device

open access: yesResults in Physics, 2022
Here, we have identified the volatile and non-volatile traits of Pt/TaOx/TiN device through the various electrical experiments by controlling the compliance current (CC) and determined the availability of this device as a memristor.
Seokyeon Yun   +3 more
doaj   +1 more source

Advances in Sustainable and Wearable Textile Based Soft Robotics

open access: yesAdvanced Functional Materials, EarlyView.
This Review examines advances in wearable textile‐based soft robotics, focusing on sustainable materials, integrated sensing, and scalable actuation. It discusses manufacturing and system integration across healthcare, assistive robotics, prosthetics, and human–machine interfaces, and highlights key challenges in circular design, including life‐cycle ...
Zahir Abbas   +6 more
wiley   +1 more source

Extending Non-Volatile Operation to DRAM Cells

open access: yesIEEE Access, 2013
This paper deals with the design and evaluation of novel dynamic random access memory (DRAM) cells that have an oxide-based resistive element added for non-volatile operation.
Wei Wei   +2 more
doaj   +1 more source

Multi-level characteristics of TiOx transparent non-volatile resistive switching device by embedding SiO2 nanoparticles

open access: yesScientific Reports, 2021
TiOx-based resistive switching devices have recently attracted attention as a promising candidate for next-generation non-volatile memory devices. A number of studies have attempted to increase the structural density of resistive switching devices.
Sera Kwon, Min-Jung Kim, Kwun-Bum Chung
doaj   +1 more source

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