Results 31 to 40 of about 128,528 (304)

Memory and Synaptic Devices Based on Emerging 2D Ferroelectricity

Advanced Electronic Materials, 2023
Memory devices are an essential part of modern electronics. Efforts to move beyond the traditional “read” and “write” of digital information in volatile and non‐volatile memory devices are leading to the rapid growth of neuromorphic technology.
Yanggeun Joo, Eunji Hwang, Heemyoung Hong, Suyeon Cho, Heejun Yang   +4 more
doaj   +1 more source

Excellent Switching Performances of TiON/HZO/MoS2 Ferroelectric Diode

, 2022
1
Yunjeong Hwang, HWANG, HYUNSANG, SEUNYEOL, OH, Yonghun Kim, SEONGJAE, HEO, LAE, YONG JUNG, Seungkwon Hwang, Jung-Dae Kwon, LEE, KYUMIN, JANG, HO JUNG, Byeongjin Park   +10 more
core  

Generation of STDP With Non-Volatile Tunnel-FET Memory for Large-Scale and Low-Power Spiking Neural Networks

IEEE Journal of the Electron Devices Society, 2020
Spiking neural networks (SNNs) have attracted considerable attention as next-generation neural networks. As SNNs consist of devices that have spike-timing-dependent plasticity (STDP) characteristics, STDP is one of the critical characteristics we need to
Hisashi Kino, Takafumi Fukushima, Tetsu Tanaka   +2 more
doaj   +1 more source

A Thermally Programmable ECRAM for Neuromorphic Computing

, 2022
1
HWANG, HYUNSANG, NIKAM, REVANNATH, LEE, LEEJONGWON   +2 more
core  

Data Management on Non-Volatile Memory [PDF]

Proceedings of the 2019 International Conference on Management of Data, 2019
We are at an exciting point in the evolution of memory technology. Device manufacturers have created a new non- volatile memory (NVM) technology that can serve as both system memory and storage. NVM supports fast reads and writes similar to volatile memory, but all writes to it are persistent like a solid-state disk.
openaire   +1 more source

Toward Sub-1V FRAM: Ultra-low Field Operation and Excellent Retention (10y/85°C) by Stack Engineering

, 2022
1
T. Werner, F. Koushan, A. Kashir, HWANG, HYUNSANG, SEUNYEOL, OH, R. Gautam, T. Schenk, M. Schuster, JANG, HO JUNG, S. Mueller   +9 more
core  

Encyclopedia of 2D β′‐In2Se3 Growth Using Chemical Vapor Deposition: The Effects of Synthesis Parameters Onto Material Quality

Advanced Engineering Materials, EarlyView.
A distinct semi‐confined inner‐tube chemical vapor deposition geometry enables reproducible, large‐area growth of phase‐pure 2D β′‐In2Se3 from InI + Se precursors. Engineering local vapor transport and optimizing precursor delivery and temperature–time conditions yield uniform continuous films.
Dasun P. W. Guruge, P. Sanju S. Panawala, Joseph F. S. Fernando, Zhenhuan Chen, Chao Zhang, Dong‐Chen Qi, Liangzhi Kou, Konstantin L. Firestein, Dmitri V. Golberg   +8 more
wiley   +1 more source

Non-Volatile Transistor Memory with a Polypeptide Dielectric

Molecules, 2020
Organic nonvolatile transistor memory with synthetic polypeptide derivatives as dielectric was fabricated by a solution process. When only poly (γ-benzyl-l-glutamate) (PBLG) was used as dielectric, the device did not show obvious hysteresis in ...
Lijuan Liang, Wenjuan He, Rong Cao, Xianfu Wei, Sei Uemura, Toshihide Kamata, Kazuki Nakamura, Changshuai Ding, Xuying Liu, Norihisa Kobayashi   +9 more
doaj   +1 more source

Design of non-destructive single-sawtooth pulse based readout for STT-RAM by NVM-SPICE

, 2012
Spin-transfer torque random access memory (STTRAM) is one promising candidate for future non-volatile memory based computing, because of its fast access time, high integration density and non-volatility.
Yang Shang, Hao Yu, Yuhao Wang, Wang, Yuhao, Shang, Yang, Yu, Hao   +5 more
core   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source