Results 51 to 60 of about 13,760,510 (244)

Memory and Synaptic Devices Based on Emerging 2D Ferroelectricity

Advanced Electronic Materials, 2023
Memory devices are an essential part of modern electronics. Efforts to move beyond the traditional “read” and “write” of digital information in volatile and non‐volatile memory devices are leading to the rapid growth of neuromorphic technology.
Yanggeun Joo, Eunji Hwang, Heemyoung Hong, Suyeon Cho, Heejun Yang   +4 more
doaj   +1 more source

Intrinsically Secure Non-Volatile Memory Using ReRAM Devices

IEEE Access, 2022
The paper describes a device-level encryption approach for implementing intrinsically secure non-volatile memory (NVM) using resistive RAM (ReRAM). Data are encoded in the ReRAM filament morphology, making it robust to both electrical and optical probing
Junjun Huan, Nicholas Olexa, Brett Hochman, Swarup Bhunia, Rashmi Jha, Soumyajit Mandal   +5 more
doaj   +1 more source

Light‐Induced Field‐Tunneling Synapses in Solution‐Processed Van Der Waals Heterostructures for Scalable, Retina‐Inspired Optical Sensing

Advanced Functional Materials, EarlyView.
A scalable, solution‐processed WSe2/ZrO2‐x van der Waals heterostructure realizes a light‐induced field‐tunneling synapse (LIFTS) that activates exclusively under bright illumination, emulating the photopic adaptation of the human retina at the device level.
Kijeong Nam, Jihyun Kim, Soobeen Ji, In Soo Kim, Sejin Kim, Eungseon Yeon, Do Kyung Hwang, Iva Plutnarová, Zdeněk Sofer, Sang Min Won, Joohoon Kang   +10 more
wiley   +1 more source

Building Emulation Framework for Non-Volatile Memory

IEEE Access, 2017
Emerging non-volatile memory (NVM) requires refactoring of the hardware and software stacks used on current computer systems. Modern researchers typically rely on simulators to test their innovations.
Guoliang Zhu, Kai Lu, Xiaoping Wang, Xu Zhou, Zhan Shi   +4 more
doaj   +1 more source

Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing

Advanced Functional Materials, EarlyView.
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin, Eunjoo Yoo, Ki‐Hoon Son, Hyun‐Sik Kim, Dae‐Hee Han, Jeong Hyeon Son, Seung Hwan Lee, Hong‐Sub Lee   +7 more
wiley   +1 more source

Emerging Post‐CMOS Hardware Neurons for Brain‐Inspired Computing: Devices, Circuits, and System Integration

Advanced Functional Materials, EarlyView.
The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan, Hocheon Yoo, Benoît H. Lessard, Ioannis Kymissis, Chang‐Hyun Kim   +4 more
wiley   +1 more source

Low-power and area-efficient memristor based non-volatile D latch and flip-flop: Design and analysis.

PLoS ONE
In recent years, non-volatile memory elements have become highly appealing for memory applications to implement a new class of storage memory that could replace flash memories in sequential logic applications, with features such as compactness, low power,
Haroon Rasheed S, Rajeev Pankaj Nelapati
doaj   +1 more source

FeFET based Logic-in-Memory: an overview

, 2021
International audienceEmerging non-volatile memories are getting new interest in the system design community. They are used to design logic-in-memory circuits and propose alternatives to von-Neuman architectures.
Thomas Mikolajick, Ian O'Connor, Breyer, Evelyn, T, Cedric Marchand, Marchand, Cédric, Slesazeck, Stefan, O'Connor, Ian, Evelyn T. Breyer, Stefan Slesazeck, Mayeul Cantan, Cantan, Mayeul, Mikolajick, Thomas   +11 more
core   +1 more source

Electrically Induced Phase Transition and Synaptic Functionality in MoTe2/Graphene Memristors

Advanced Functional Materials, EarlyView.
An electrically induced reversible 2H ↔ 1T′ phase transition is demonstrated in a vertical Au/Ti/MoTe2/graphene memristor with a laterally contacted graphene electrode. Resistive switching proceeds through a compositionally invariant amorphous/2H ↔ amorphous/1T′ transformation, in which a self‐formed amorphous MoTe2 interfacial region is proposed to ...
Chien‐Hua Wang, Mu‐Pai Lee, Jhen‐Dong Tsai, Liang‐Ying Hsieh, Jui‐Yuan Chen, Chun‐Wei Huang, Yen‐Fu Lin, Wen‐Wei Wu   +7 more
wiley   +1 more source

NVPE: An FPGA-Based Non-Volatile Processor Emulator for Intermittent Computing

Proceedings
Research on novel memory storage devices that occupy less physical area and are compatible with CMOS processes, such as resistive RAM, has led to the interesting study of non-volatile compute memories and devices.
Idris Somoye, Kevin Yang
doaj   +1 more source