Results 11 to 20 of about 13,760,510 (244)

Overview of radiation effects on emerging non-volatile memory technologies [PDF]

open access: yesNuclear Technology and Radiation Protection, 2017
In this paper we give an overview of radiation effects in emergent, non-volatile memory technologies. Investigations into radiation hardness of resistive random access memory, ferroelectric random access memory, magneto-resistive random access ...
Fetahović Irfan S.   +3 more
doaj   +3 more sources

DNA multi-bit non-volatile memory and bit-shifting operations using addressable electrode arrays and electric field-induced hybridization [PDF]

open access: yesNature Communications, 2018
DNA based technology holds promise for non-volatile memory and computational tasks, yet the relatively slow hybridization kinetics remain a bottleneck. Here, Song et al.
Youngjun Song   +3 more
doaj   +2 more sources

Memristor Degradation Analysis Using Auxiliary Volt-Ampere Characteristics

open access: yesMicromachines, 2022
The memristor is one of the modern microelectronics key devices. Due to the nanometer scale and complex processes physic, the development of memristor state study approaches faces limitations of classical methods to observe the processes.
Georgy Teplov   +8 more
doaj   +1 more source

Prospects for energy-efficient edge computing with integrated HfO₂-based ferroelectric devices [PDF]

open access: yes, 2021
Edge computing requires highly energy efficient microprocessor units with embedded non-volatile memories to process data at IoT sensor nodes. Ferroelectric non-volatile memory devices are fast, low power and high endurance, and could greatly enhance ...
Breyer, Evelyn T.   +11 more
core   +2 more sources

Introduction to the Special Section on the 2019 IEEE S3S Conference

open access: yesIEEE Journal of the Electron Devices Society, 2020
This special section of the IEEE JOURNAL OF ELECTRON DEVICES SOCIETY is dedicated to select papers presented at the 2019 IEEE S3S Conference, which was held Oct. 14– 17, 2019 in San Jose, CA, USA.
Ali Khakifirooz, Nobuyuki Sugii
doaj   +1 more source

Fully Microelectromechanical Non-Volatile Memory Cell [PDF]

open access: yes, 2023
This paper reports the first non-volatile memory cell composed entirely of MEM relays that does not need CMOS circuitry for reading or writing. The cell uses a 7-terminal non-volatile relay for information storage and two 3-terminal relays for read and ...
Worsey, Elliott   +7 more
core   +1 more source

Phase change thin films for non-volatile memory applications. [PDF]

open access: yesNanoscale Adv, 2019
The rapid development of Internet of Things devices requires real time processing of a huge amount of digital data, creating a new demand for computing technology.
Lotnyk A, Behrens M, Rauschenbach B.
europepmc   +2 more sources

Weight Update Generation Circuit Utilizing Phase Noise of Integrated Complementary Metal–Oxide–Semiconductor Ring Oscillator for Memristor Crossbar Array Neural Network‐Based Stochastic Learning

open access: yesAdvanced Intelligent Systems, 2020
Herein, a robust programmable stochastic weight generation method for a memristive neural network is proposed. There have been few prior algorithm suggestions for crossbar neural network‐based stochastic learning; however, there has not been much ...
Woorham Bae, Kyung Jean Yoon
doaj   +1 more source

Non-volatile memory storage in tri-layer structures using the intrinsically ferromagnetic semiconductors GdN and DyN

open access: yes, 2022
We report on the potential use of the intrinsic ferromagnetic rare earth nitride (REN) semiconductors as ferromagnetic electrodes in tunnelling magnetoresistance and giant magnetoresistance device structures for non-volatile memory storage devices.
Benjamin Ruck (8509461)   +7 more
core   +2 more sources

Comparative analysis of tolerance to space ionizing radiation for ReRAM and other non-volatile memory types

open access: yesБезопасность информационных технологий, 2022
The aim of the study is to consider the prospects of using resistive memory microcircuits (RRAM, CBRAM) for space applications. Total dose and single event effects in resistive memory test cells and finished CMOS RRAM microcircuits were investigated.
Andrey G. Petrov   +4 more
doaj   +1 more source

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