Results 11 to 20 of about 128,528 (304)

Memristor Degradation Analysis Using Auxiliary Volt-Ampere Characteristics

Micromachines, 2022
The memristor is one of the modern microelectronics key devices. Due to the nanometer scale and complex processes physic, the development of memristor state study approaches faces limitations of classical methods to observe the processes.
Georgy Teplov, Dmitry Zhevnenko, Fedor Meshchaninov, Vladislav Kozhevnikov, Pavel Sattarov, Sergey Kuznetsov, Alikhan Magomedrasulov, Oleg Telminov, Evgeny Gornev   +8 more
doaj   +1 more source

Introduction to the Special Section on the 2019 IEEE S3S Conference

IEEE Journal of the Electron Devices Society, 2020
This special section of the IEEE JOURNAL OF ELECTRON DEVICES SOCIETY is dedicated to select papers presented at the 2019 IEEE S3S Conference, which was held Oct. 14– 17, 2019 in San Jose, CA, USA.
Ali Khakifirooz, Nobuyuki Sugii
doaj   +1 more source

The trend of emerging non-volatile TCAM for parallel search and AI applications

Chip, 2022
In this paper, we review the recent trends in parallel search and artificial intelligence (AI) applications using emerging non-volatile ternary content addressable memory (TCAM). Firstly, the principle and development of four typical emerging memory used
Ke-Ji Zhou, Chen Mu, Bo Wen, Xu-Meng Zhang, Guang-Jian Wu, Can Li, Hao Jiang, Xiao-Yong Xue, Shang Tang, Chi-Xiao Chen, Qi Liu   +10 more
doaj   +1 more source

Weight Update Generation Circuit Utilizing Phase Noise of Integrated Complementary Metal–Oxide–Semiconductor Ring Oscillator for Memristor Crossbar Array Neural Network‐Based Stochastic Learning

Advanced Intelligent Systems, 2020
Herein, a robust programmable stochastic weight generation method for a memristive neural network is proposed. There have been few prior algorithm suggestions for crossbar neural network‐based stochastic learning; however, there has not been much ...
Woorham Bae, Kyung Jean Yoon
doaj   +1 more source

Transformer: An OS-Supported Reconfigurable Hybrid Memory Architecture

Applied Sciences, 2022
Non-volatile memories (NVMs) have aroused vast interest in hybrid memory systems due to their promising features of byte-addressability, high storage density, low cost per byte, and near-zero standby energy consumption.
Ye Chi, Haikun Liu, Ganwei Peng, Xiaofei Liao, Hai Jin   +4 more
doaj   +1 more source

Introduction to the Special Section on the 2018 IEEE S3S Conference

IEEE Journal of the Electron Devices Society, 2019
This special section of the IEEE Journal of Electron Devices Society is dedicated to select papers presented at the 2018 IEEE S3S Conference, which was held Oct. 15–18, 2018 in Burlingame, CA, USA.
Ali Khakifirooz, Nobuyuki Sugii
doaj   +1 more source

Comparative analysis of tolerance to space ionizing radiation for ReRAM and other non-volatile memory types

Безопасность информационных технологий, 2022
The aim of the study is to consider the prospects of using resistive memory microcircuits (RRAM, CBRAM) for space applications. Total dose and single event effects in resistive memory test cells and finished CMOS RRAM microcircuits were investigated.
Andrey G. Petrov, Ivan I. Shvetsov-Shilovskiy, Sergey B. Shmakov, Anastasia V. Ulanova, Anna B. Boruzdina   +4 more
doaj   +1 more source

Non-volatile data storage in HfO2-based ferroelectric FETs

, 2022
S.60-63The ferroelectric behavior of capacitors based on hafnium oxide dielectrics is reported. Thin films of 7-30 nm thickness were found to exhibit ferroelectric polarization-voltage hysteresis loops when integrated into TiN-based metal-insulator-metal
Mikolajick, T., Yurchuk, E., Mueller, S., Mueller, J., Slesazeck, S., Schroeder, U., Schloesser, T., Trentzsch, M.   +7 more
core   +1 more source

Memristor-based Random Access Memory: The delayed switching effect could revolutionize memory design [PDF]

, 2015
Memristor’s on/off resistance can naturally store binary bits for non-volatile memories. In this work, we found that memristor’s another peculiar feature that the switching takes place with a time delay (we name it “the delayed switching”) can be used to
Wang, Frank Z., Leon O. Chua, Wang, Frank, Helian, Na, Na Helian, Chua, Leon O., Frank Zhigang Wang   +6 more
core   +1 more source

Multi-level Non-Volatile Organic Transistor-based Memory using Lithium ion encapsulated Fullerene as a Charge Trapping Layer [PDF]

, 2017
We report on multi-level non-volatile organic transistor-based memory using pentacene semiconductor and a lithium-ion-encapsulated fullerene (Li^+@C_) as a charge trapping layer.
Murata, Hideyuki, Kei Ohkubo, Heisuke Sakai, Manh Tran, Cuong, Sakai, Heisuke, Fukuzumi, Shunichi, Yuki Kawashima, Cuong Manh Tran, Hideyuki Murata, Shunichi Fukuzumi, Kawashima, Yuki, Ohkubo, Kei   +11 more
core   +1 more source