Results 11 to 20 of about 19,012 (258)
Herein, a robust programmable stochastic weight generation method for a memristive neural network is proposed. There have been few prior algorithm suggestions for crossbar neural network‐based stochastic learning; however, there has not been much ...
Woorham Bae, Kyung Jean Yoon
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Transformer: An OS-Supported Reconfigurable Hybrid Memory Architecture
Non-volatile memories (NVMs) have aroused vast interest in hybrid memory systems due to their promising features of byte-addressability, high storage density, low cost per byte, and near-zero standby energy consumption.
Ye Chi +4 more
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Introduction to the Special Section on the 2018 IEEE S3S Conference
This special section of the IEEE Journal of Electron Devices Society is dedicated to select papers presented at the 2018 IEEE S3S Conference, which was held Oct. 15–18, 2018 in Burlingame, CA, USA.
Ali Khakifirooz, Nobuyuki Sugii
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The aim of the study is to consider the prospects of using resistive memory microcircuits (RRAM, CBRAM) for space applications. Total dose and single event effects in resistive memory test cells and finished CMOS RRAM microcircuits were investigated.
Andrey G. Petrov +4 more
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Novel Molecular Non-Volatile Memory: Application of Redox-Active Molecules
This review briefly describes the development of molecular electronics in the application of non-volatile memory. Molecules, especially redox-active molecules, have become interesting due to their intrinsic redox behavior, which provides an excellent ...
Hao Zhu, Qiliang Li
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Intrinsically Secure Non-Volatile Memory Using ReRAM Devices
The paper describes a device-level encryption approach for implementing intrinsically secure non-volatile memory (NVM) using resistive RAM (ReRAM). Data are encoded in the ReRAM filament morphology, making it robust to both electrical and optical probing
Junjun Huan +5 more
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Improving graphene non‐volatile memory using self‐aligned gate
As the scale of graphene‐based non‐volatile memory is reduced, the ratio of access resistance RA to total channel resistance RTOT is increased. To investigate the effect of the RA on I–V characteristics, we fabricated devices with various access lengths ...
K. Lee, O. Kim
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Volatile and Non-Volatile Single Electron Memory [PDF]
Multi Tunnel Junctions (MTJs) have attracted much attention recently in the fields of Single-Electron Devices (SED) in particular Single-Electron Memory (SEM).
A. Touati , A. Kalboussi
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Non-Volatile Memory File Systems: A Survey
For decades, computer architectures have treated memory and storage as separate entities. Nowadays, we watch the emergence of new memory technologies that promise to significantly change the landscape of memory systems.
Gianlucca O. Puglia +4 more
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Memory and Synaptic Devices Based on Emerging 2D Ferroelectricity
Memory devices are an essential part of modern electronics. Efforts to move beyond the traditional “read” and “write” of digital information in volatile and non‐volatile memory devices are leading to the rapid growth of neuromorphic technology.
Yanggeun Joo +4 more
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