Results 1 to 10 of about 11,787,803 (205)
Novel Molecular Non-Volatile Memory: Application of Redox-Active Molecules
This review briefly describes the development of molecular electronics in the application of non-volatile memory. Molecules, especially redox-active molecules, have become interesting due to their intrinsic redox behavior, which provides an excellent ...
Hao Zhu, Qiliang Li
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Memristor Degradation Analysis Using Auxiliary Volt-Ampere Characteristics
The memristor is one of the modern microelectronics key devices. Due to the nanometer scale and complex processes physic, the development of memristor state study approaches faces limitations of classical methods to observe the processes.
Georgy Teplov +8 more
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Donor–acceptor-type organic semiconductor molecules are of great interest for potential organic field-effect transistor applications with ambipolar characteristics and non-volatile memory applications. Here, we synthesized an organic semiconductor, PDPPT-
Young Jin Choi +6 more
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Introduction to the Special Section on the 2019 IEEE S3S Conference
This special section of the IEEE JOURNAL OF ELECTRON DEVICES SOCIETY is dedicated to select papers presented at the 2019 IEEE S3S Conference, which was held Oct. 14– 17, 2019 in San Jose, CA, USA.
Ali Khakifirooz, Nobuyuki Sugii
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The trend of emerging non-volatile TCAM for parallel search and AI applications
In this paper, we review the recent trends in parallel search and artificial intelligence (AI) applications using emerging non-volatile ternary content addressable memory (TCAM). Firstly, the principle and development of four typical emerging memory used
Ke-Ji Zhou +10 more
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Herein, a robust programmable stochastic weight generation method for a memristive neural network is proposed. There have been few prior algorithm suggestions for crossbar neural network‐based stochastic learning; however, there has not been much ...
Woorham Bae, Kyung Jean Yoon
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Transformer: An OS-Supported Reconfigurable Hybrid Memory Architecture
Non-volatile memories (NVMs) have aroused vast interest in hybrid memory systems due to their promising features of byte-addressability, high storage density, low cost per byte, and near-zero standby energy consumption.
Ye Chi +4 more
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Introduction to the Special Section on the 2018 IEEE S3S Conference
This special section of the IEEE Journal of Electron Devices Society is dedicated to select papers presented at the 2018 IEEE S3S Conference, which was held Oct. 15–18, 2018 in Burlingame, CA, USA.
Ali Khakifirooz, Nobuyuki Sugii
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The aim of the study is to consider the prospects of using resistive memory microcircuits (RRAM, CBRAM) for space applications. Total dose and single event effects in resistive memory test cells and finished CMOS RRAM microcircuits were investigated.
Andrey G. Petrov +4 more
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Intrinsically Secure Non-Volatile Memory Using ReRAM Devices
The paper describes a device-level encryption approach for implementing intrinsically secure non-volatile memory (NVM) using resistive RAM (ReRAM). Data are encoded in the ReRAM filament morphology, making it robust to both electrical and optical probing
Junjun Huan +5 more
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