Results 1 to 10 of about 11,787,803 (205)

Novel Molecular Non-Volatile Memory: Application of Redox-Active Molecules

open access: yesApplied Sciences, 2015
This review briefly describes the development of molecular electronics in the application of non-volatile memory. Molecules, especially redox-active molecules, have become interesting due to their intrinsic redox behavior, which provides an excellent ...
Hao Zhu, Qiliang Li
doaj   +2 more sources

Memristor Degradation Analysis Using Auxiliary Volt-Ampere Characteristics

open access: yesMicromachines, 2022
The memristor is one of the modern microelectronics key devices. Due to the nanometer scale and complex processes physic, the development of memristor state study approaches faces limitations of classical methods to observe the processes.
Georgy Teplov   +8 more
doaj   +1 more source

Hysteresis Behavior of the Donor–Acceptor-Type Ambipolar Semiconductor for Non-Volatile Memory Applications

open access: yesMicromachines, 2021
Donor–acceptor-type organic semiconductor molecules are of great interest for potential organic field-effect transistor applications with ambipolar characteristics and non-volatile memory applications. Here, we synthesized an organic semiconductor, PDPPT-
Young Jin Choi   +6 more
doaj   +1 more source

Introduction to the Special Section on the 2019 IEEE S3S Conference

open access: yesIEEE Journal of the Electron Devices Society, 2020
This special section of the IEEE JOURNAL OF ELECTRON DEVICES SOCIETY is dedicated to select papers presented at the 2019 IEEE S3S Conference, which was held Oct. 14– 17, 2019 in San Jose, CA, USA.
Ali Khakifirooz, Nobuyuki Sugii
doaj   +1 more source

The trend of emerging non-volatile TCAM for parallel search and AI applications

open access: yesChip, 2022
In this paper, we review the recent trends in parallel search and artificial intelligence (AI) applications using emerging non-volatile ternary content addressable memory (TCAM). Firstly, the principle and development of four typical emerging memory used
Ke-Ji Zhou   +10 more
doaj   +1 more source

Weight Update Generation Circuit Utilizing Phase Noise of Integrated Complementary Metal–Oxide–Semiconductor Ring Oscillator for Memristor Crossbar Array Neural Network‐Based Stochastic Learning

open access: yesAdvanced Intelligent Systems, 2020
Herein, a robust programmable stochastic weight generation method for a memristive neural network is proposed. There have been few prior algorithm suggestions for crossbar neural network‐based stochastic learning; however, there has not been much ...
Woorham Bae, Kyung Jean Yoon
doaj   +1 more source

Transformer: An OS-Supported Reconfigurable Hybrid Memory Architecture

open access: yesApplied Sciences, 2022
Non-volatile memories (NVMs) have aroused vast interest in hybrid memory systems due to their promising features of byte-addressability, high storage density, low cost per byte, and near-zero standby energy consumption.
Ye Chi   +4 more
doaj   +1 more source

Introduction to the Special Section on the 2018 IEEE S3S Conference

open access: yesIEEE Journal of the Electron Devices Society, 2019
This special section of the IEEE Journal of Electron Devices Society is dedicated to select papers presented at the 2018 IEEE S3S Conference, which was held Oct. 15–18, 2018 in Burlingame, CA, USA.
Ali Khakifirooz, Nobuyuki Sugii
doaj   +1 more source

Comparative analysis of tolerance to space ionizing radiation for ReRAM and other non-volatile memory types

open access: yesБезопасность информационных технологий, 2022
The aim of the study is to consider the prospects of using resistive memory microcircuits (RRAM, CBRAM) for space applications. Total dose and single event effects in resistive memory test cells and finished CMOS RRAM microcircuits were investigated.
Andrey G. Petrov   +4 more
doaj   +1 more source

Intrinsically Secure Non-Volatile Memory Using ReRAM Devices

open access: yesIEEE Access, 2022
The paper describes a device-level encryption approach for implementing intrinsically secure non-volatile memory (NVM) using resistive RAM (ReRAM). Data are encoded in the ReRAM filament morphology, making it robust to both electrical and optical probing
Junjun Huan   +5 more
doaj   +1 more source

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