Results 31 to 40 of about 11,787,803 (205)

Electrical analysis of unbalanced Flash memory array construction effects and their impact on performance and reliability

, 2022
S.72-76In our work we present statistical methods and new memory array analysis approaches for decomposition and assessment of contributors to the Vth distribution widening.
Hoffmann, R., Seidel, K., Müller, T., Löhr, D.-A., Melde, T., Paul, J., Brandt, T., Czernohorsky, M., Beyer, V.   +8 more
core   +1 more source

Recent Progress of Non-Volatile Memory Devices Based on Two-Dimensional Materials

Chips
With the development of artificial intelligence and edge computing, the demand for high-performance non-volatile memory devices has been rapidly increasing.
Jiong Pan, Zeda Wang, Bingchen Zhao, Jiaju Yin, Pengwen Guo, Yi Yang, Tian-Ling Ren   +6 more
doaj   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

ELECTRICAL CHARACTERIZATION, PHYSICS, MODELING AND RELIABILITY OF INNOVATIVE NON-VOLATILE MEMORIES [PDF]

, 2012
Enclosed in this thesis work it can be found the results of a three years long research activity performed during the XXIV-th cycle of the Ph.D. school in Engineering Science of the Università degli Studi di Ferrara. The topic of this work is concerned
Zambelli, Cristian
core  

Toward Sub-1V FRAM: Ultra-low Field Operation and Excellent Retention (10y/85°C) by Stack Engineering

, 2022
1
T. Werner, F. Koushan, A. Kashir, HWANG, HYUNSANG, SEUNYEOL, OH, R. Gautam, T. Schenk, M. Schuster, JANG, HO JUNG, S. Mueller   +9 more
core  

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Design of non-destructive single-sawtooth pulse based readout for STT-RAM by NVM-SPICE

, 2012
Spin-transfer torque random access memory (STTRAM) is one promising candidate for future non-volatile memory based computing, because of its fast access time, high integration density and non-volatility.
Yang Shang, Hao Yu, Yuhao Wang, Wang, Yuhao, Shang, Yang, Yu, Hao   +5 more
core   +1 more source

Non-volatile memory storage in tri-layer structures using the intrinsically ferromagnetic semiconductors GdN and DyN

, 2022
We report on the potential use of the intrinsic ferromagnetic rare earth nitride (REN) semiconductors as ferromagnetic electrodes in tunnelling magnetoresistance and giant magnetoresistance device structures for non-volatile memory storage devices.
Benjamin Ruck (8509461), S Devese (15855797), Simon Granville (8509239), C Pot (15855800), Natalie Plank (8509686), William Holmes-Hewett (8512113), H Joe Trodahl (15855803), Franck Natali (8509641)   +7 more
core   +2 more sources

Bioorganic nanodots for non-volatile memory devices

APL Materials, 2013
In recent years we are witnessing an intensive integration of bio-organic nanomaterials in electronic devices. Here we show that the diphenylalanine bio-molecule can self-assemble into tiny peptide nanodots (PNDs) of ∼2 nm size, and can be embedded into ...
Nadav Amdursky, Gil Shalev, Amir Handelman, Simon Litsyn, Amir Natan, Yakov Roizin, Yossi Rosenwaks, Daniel Szwarcman, Gil Rosenman   +8 more
doaj   +1 more source

Generation of STDP With Non-Volatile Tunnel-FET Memory for Large-Scale and Low-Power Spiking Neural Networks

IEEE Journal of the Electron Devices Society, 2020
Spiking neural networks (SNNs) have attracted considerable attention as next-generation neural networks. As SNNs consist of devices that have spike-timing-dependent plasticity (STDP) characteristics, STDP is one of the critical characteristics we need to
Hisashi Kino, Takafumi Fukushima, Tetsu Tanaka   +2 more
doaj   +1 more source