Results 31 to 40 of about 15,576,567 (291)

Non-volatile memory storage in tri-layer structures using the intrinsically ferromagnetic semiconductors GdN and DyN

open access: yes, 2022
We report on the potential use of the intrinsic ferromagnetic rare earth nitride (REN) semiconductors as ferromagnetic electrodes in tunnelling magnetoresistance and giant magnetoresistance device structures for non-volatile memory storage devices.
Benjamin Ruck (8509461)   +7 more
core   +2 more sources

Laser‐Assisted Multilevel Non‐Volatile Memory Device Based on 2D van‐der‐Waals Few‐Layer‐ReS2/h‐BN/Graphene Heterostructures [PDF]

open access: yesAdvanced Functional Materials, 2020
Few‐layer rhenium disulfide (ReS2) field‐effect transistors with a local floating gate (FG) of monolayer graphene separated by a thin hexagonal boron nitride tunnel layer for application to a non‐volatile memory (NVM) device are designed and investigated.
Bablu Mukherjee   +5 more
semanticscholar   +1 more source

Transformer: An OS-Supported Reconfigurable Hybrid Memory Architecture

open access: yesApplied Sciences, 2022
Non-volatile memories (NVMs) have aroused vast interest in hybrid memory systems due to their promising features of byte-addressability, high storage density, low cost per byte, and near-zero standby energy consumption.
Ye Chi   +4 more
doaj   +1 more source

Programmable Terahertz Metamaterials with Non‐Volatile Memory

open access: yesLaser & Photonics reviews, 2021
Spatial light modulators (SLMs) exhibit a powerful capability of controlling electromagnetic waves. They are found to have numerous applications at terahertz (THz) frequencies, including wireless communication, digital holography, and compressive imaging.
Ben-Wen Chen   +10 more
semanticscholar   +1 more source

Introduction to the Special Section on the 2018 IEEE S3S Conference

open access: yesIEEE Journal of the Electron Devices Society, 2019
This special section of the IEEE Journal of Electron Devices Society is dedicated to select papers presented at the 2018 IEEE S3S Conference, which was held Oct. 15–18, 2018 in Burlingame, CA, USA.
Ali Khakifirooz, Nobuyuki Sugii
doaj   +1 more source

Non-volatile heterogeneous III-V/Si photonics via optical charge-trap memory

open access: yes, 2023
We demonstrate, for the first time, non-volatile charge-trap flash memory (CTM) co-located with heterogeneous III-V/Si photonics. The wafer-bonded III-V/Si CTM cell facilitates non-volatile optical functionality for a variety of devices such as Mach ...
Geza Kurczveil (10518965)   +6 more
core   +1 more source

Memristor-based Random Access Memory: The delayed switching effect could revolutionize memory design [PDF]

open access: yes, 2015
Memristor’s on/off resistance can naturally store binary bits for non-volatile memories. In this work, we found that memristor’s another peculiar feature that the switching takes place with a time delay (we name it “the delayed switching”) can be used to
Wang, Frank Z.   +6 more
core   +1 more source

Non-filamentary non-volatile memory elements as synapses in neuromorphic systems

open access: yes, 2019
Crossbar arrays of non-volatile memory (NVM) devices represent one possible path for implementing highly energy-efficient neuromorphic computing systems.
Jang, J.   +9 more
core   +2 more sources

Review on resistive switching mechanisms of bio-organic thin film for non-volatile memory application

open access: yes, 2021
Bio-organic, as one of the sustainable and bioresorbable materials, has been used as an active thin film in producing resistive switching random access memory (RRAM) due to its specialized properties.
K. Cheong   +3 more
semanticscholar   +1 more source

Comparative analysis of tolerance to space ionizing radiation for ReRAM and other non-volatile memory types

open access: yesБезопасность информационных технологий, 2022
The aim of the study is to consider the prospects of using resistive memory microcircuits (RRAM, CBRAM) for space applications. Total dose and single event effects in resistive memory test cells and finished CMOS RRAM microcircuits were investigated.
Andrey G. Petrov   +4 more
doaj   +1 more source

Home - About - Disclaimer - Privacy