Results 11 to 20 of about 11,787,803 (205)
Volatile and Non-Volatile Single Electron Memory [PDF]
Журнал нано- та електронної фізики, 2013 Multi Tunnel Junctions (MTJs) have attracted much attention recently in the fields of Single-Electron Devices (SED) in particular Single-Electron Memory (SEM).
A. Touati , A. Kalboussi
doaj +2 more sources
Non-volatile data storage in HfO2-based ferroelectric FETs
, 2022 S.60-63The ferroelectric behavior of capacitors based on hafnium oxide dielectrics is reported. Thin films of 7-30 nm thickness were found to exhibit ferroelectric polarization-voltage hysteresis loops when integrated into TiN-based metal-insulator-metal
Mikolajick, T. +7 more
core +1 more source
Memristor-based Random Access Memory: The delayed switching effect could revolutionize memory design [PDF]
, 2015 Memristor’s on/off resistance can naturally store binary bits for non-volatile memories. In this work, we found that memristor’s another peculiar feature that the switching takes place with a time delay (we name it “the delayed switching”) can be used to
Wang, Frank Z. +6 more
core +1 more source
Application level evidence from volatile memory
, 2009 This paper details an investigation aimed at identifying the application level evidence that can be extracted from volatile memory. Application level evidence indicates how the user is using an application when a memory image is collected.
Olajide, F., Savage, N.
core +4 more sources
Multi-level Non-Volatile Organic Transistor-based Memory using Lithium ion encapsulated Fullerene as a Charge Trapping Layer [PDF]
, 2017 We report on multi-level non-volatile organic transistor-based memory using pentacene semiconductor and a lithium-ion-encapsulated fullerene (Li^+@C_) as a charge trapping layer.
Murata, Hideyuki +11 more
core +1 more source
Self-rated everyday prospective memory abilities of cigarette smokers and non-smokers: a web based study [PDF]
, 2005 The present study examined self-ratings of two aspects of everyday memory performance: long-term prospective memory—measured by the prospective memory questionnaire (PMQ), and everyday memory—measured by the everyday memory questionnaire (EMQ).
Buchanan, Tom +11 more
core +1 more source
Improving graphene non‐volatile memory using self‐aligned gate
Electronics Letters, 2016 As the scale of graphene‐based non‐volatile memory is reduced, the ratio of access resistance RA to total channel resistance RTOT is increased. To investigate the effect of the RA on I–V characteristics, we fabricated devices with various access lengths ...
K. Lee, O. Kim
doaj +1 more source
Neuromorphic computing using non-volatile memory
Advances in Physics: X, 2017 Dense crossbar arrays of non-volatile memory (NVM) devices represent one possible path for implementing massively-parallel and highly energy-efficient neuromorphic computing systems.
Geoffrey W. Burr +16 more
doaj +1 more source
Micromachines, 2023 In recent years, digital computing in memory (CIM) has been an efficient and high-performance solution in artificial intelligence (AI) edge inference. Nevertheless, digital CIM based on non-volatile memory (NVM) is less discussed for the sophisticated ...
Hongyang Hu +9 more
doaj +1 more source
Excellent Switching Performances of TiON/HZO/MoS2 Ferroelectric Diode
, 2022 1
Yunjeong Hwang +10 more
core