Results 51 to 60 of about 15,576,567 (291)
Chip, possess different data access mechanisms, individual merits, and speci fi c application boundaries in next-generation memories or even beyond von Neumann architecture. This paper provides an overview of ferroelectric HfO 2 memory technologies, addresses
Minghao Shao +17 more
semanticscholar +1 more source
Building Emulation Framework for Non-Volatile Memory
IEEE Access, 2017 Emerging non-volatile memory (NVM) requires refactoring of the hardware and software stacks used on current computer systems. Modern researchers typically rely on simulators to test their innovations.
Guoliang Zhu +4 more
doaj +1 more source
Memory and Synaptic Devices Based on Emerging 2D Ferroelectricity
Advanced Electronic Materials, 2023 Memory devices are an essential part of modern electronics. Efforts to move beyond the traditional “read” and “write” of digital information in volatile and non‐volatile memory devices are leading to the rapid growth of neuromorphic technology.
Yanggeun Joo +4 more
doaj +1 more source
Non-Volatile Transistor Memory with a Polypeptide Dielectric
Molecules, 2020 Organic nonvolatile transistor memory with synthetic polypeptide derivatives as dielectric was fabricated by a solution process. When only poly (γ-benzyl-l-glutamate) (PBLG) was used as dielectric, the device did not show obvious hysteresis in ...
Lijuan Liang +9 more
doaj +1 more source
Advanced Functional Materials, EarlyView.In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa +19 more
wiley +1 more source
Advanced Functional Materials, EarlyView.Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner +14 more
wiley +1 more source
Energy-efficient magnetoelastic non-volatile memory [PDF]
, 2014 We propose an improved scheme for low-power writing of binary bits in non-volatile (multiferroic) magnetic memory with electrically generated mechanical stress. Compared to an earlier idea [N. Tiercelin et al., J. Appl. Phys.
Biswas, Ayan K. +2 more
core +1 more source
IEEE Journal of the Electron Devices Society, 2020 Spiking neural networks (SNNs) have attracted considerable attention as next-generation neural networks. As SNNs consist of devices that have spike-timing-dependent plasticity (STDP) characteristics, STDP is one of the critical characteristics we need to
Hisashi Kino +2 more
doaj +1 more source
Advanced Functional Materials, EarlyView.Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand +13 more
wiley +1 more source
Hardware sollution about power fail protective mechanism of non volatile memory
Dianzi Jishu Yingyong, 2019 The principle of data power failure protection for non-volatile memory(NVM) of security chip is analyzed. Considering that the processing speed of software can not meet the performance requirements of security chip for data storage, this paper proposes a
Su Wei +4 more
doaj +1 more source