Results 61 to 70 of about 11,787,803 (205)

Low-power and area-efficient memristor based non-volatile D latch and flip-flop: Design and analysis.

PLoS ONE
In recent years, non-volatile memory elements have become highly appealing for memory applications to implement a new class of storage memory that could replace flash memories in sequential logic applications, with features such as compactness, low power,
Haroon Rasheed S, Rajeev Pankaj Nelapati
doaj   +1 more source

Light‐Induced Field‐Tunneling Synapses in Solution‐Processed Van Der Waals Heterostructures for Scalable, Retina‐Inspired Optical Sensing

Advanced Functional Materials, EarlyView.
A scalable, solution‐processed WSe2/ZrO2‐x van der Waals heterostructure realizes a light‐induced field‐tunneling synapse (LIFTS) that activates exclusively under bright illumination, emulating the photopic adaptation of the human retina at the device level.
Kijeong Nam, Jihyun Kim, Soobeen Ji, In Soo Kim, Sejin Kim, Eungseon Yeon, Do Kyung Hwang, Iva Plutnarová, Zdeněk Sofer, Sang Min Won, Joohoon Kang   +10 more
wiley   +1 more source

Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing

Advanced Functional Materials, EarlyView.
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin, Eunjoo Yoo, Ki‐Hoon Son, Hyun‐Sik Kim, Dae‐Hee Han, Jeong Hyeon Son, Seung Hwan Lee, Hong‐Sub Lee   +7 more
wiley   +1 more source

Non-filamentary non-volatile memory elements as synapses in neuromorphic systems

Crossbar arrays of non-volatile memory (NVM) devices represent one possible path for implementing highly energy-efficient neuromorphic computing systems.
Jang, J., Moon, K., Narayanan, P., Fumarola, Alessandro, Sidler, S., Sanchez, L. L., Burr, G. W., Hwang, H., Leblebici, Y., Shelby, R. M.   +9 more
core   +1 more source

Non‐volatile Sliding Ferroelectric Memory Effect in Ultrathin γ‐InSe

Advanced Electronic Materials
Ferroelectrics exhibit field‐tunable non‐volatile polarization, making them essential for modern electronic devices, including memories and sensors. Conventional ferroelectric transistors typically suffer from limited memory windows and poor fatigue ...
Yue Li, Luoyang Ding, Zhixiong Li, Feng Chen, Xiaoyao Weng, Min Zhu, Siyuan Wan, Yangbo Zhou   +7 more
doaj   +1 more source

Non-volatile optoelectronic memory based on a photosensitive dielectric

Nature Communications, 2023
Recently, the optoelectronic memory is capturing growing attention due to its integrated function of sense and memory as well as multilevel storage ability.
Rui Zhu, Huili Liang, Shangfeng Liu, Ye Yuan, Xinqiang Wang, Francis Chi-Chung Ling, Andrej Kuznetsov, Guangyu Zhang, Zengxia Mei   +8 more
doaj   +1 more source

Emerging Post‐CMOS Hardware Neurons for Brain‐Inspired Computing: Devices, Circuits, and System Integration

Advanced Functional Materials, EarlyView.
The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan, Hocheon Yoo, Benoît H. Lessard, Ioannis Kymissis, Chang‐Hyun Kim   +4 more
wiley   +1 more source

Exploring data placement in racetrack memory based scratchpad memory

, 2015
Scratchpad Memory (SPM) has been widely adopted in various computing systems to improve performance of data access. Recently, non-volatile memory technologies (NVMs) have been employed for SPM design to improve its capacity and reduce its energy ...
Mao, Haiyu, Chao Zhang, Zhang, Chao, Sun, Guangyu, Jiwu Shu, Haiyu Mao, Guangyu Sun, Shu, Jiwu   +7 more
core   +1 more source

Overview of Phase-Change Materials Based Photonic Devices

IEEE Access, 2020
Non-volatile storage memory is widely considered to be one of the most promising candidates to replace dynamic random access memory and even static random access memory.
Jianmin Wang, Lei Wang, Jun Liu
doaj   +1 more source

Enhanced Ferroelectric Phase Formation via Local Structure Modification in the Pre‐Crystalline State of Hafnium Zirconium Oxide Thin Films

Advanced Functional Materials, EarlyView.
Hafnium zirconium oxide thin films are grown using plasma‐enhanced atomic layer deposition with the addition of an atomic layer annealing (ALA) step. ALA leads to a change in the short‐range structure of the deposit and encourages formation of the ferroelectric Pca21 phase. The result is wake‐up‐free performance with films exposed to ALA.
Nicolas K. Lam, Gerald R. Bejger, Waseem A. Wani, Kristina M. Holsgrove, Andrew N. Titus, Niyorjyoti Sharma, Shihao Wang, Keithen Orson, Megan K. Lenox, Liron Shvilberg, Yong Kyu Choi, Ian A. Brummel, Benjamin L. Aronson, Petra Reinke, Quentin Ramasse, Amit Kumar, Brian J. Rodriguez, Christina M. Rost, Jon F. Ihlefeld   +18 more
wiley   +1 more source