Results 81 to 90 of about 15,576,567 (291)

Low-power and area-efficient memristor based non-volatile D latch and flip-flop: Design and analysis.

PLoS ONE
In recent years, non-volatile memory elements have become highly appealing for memory applications to implement a new class of storage memory that could replace flash memories in sequential logic applications, with features such as compactness, low power,
Haroon Rasheed S, Rajeev Pankaj Nelapati
doaj   +1 more source

Two Dimensional Parity Check with Variable Length Error Detection Code for the Non-Volatile Memory of Smart Data

Applied Sciences, 2018
This paper proposes a novel technology of memory protection for the Non-Volatile Memory (NVM), applied to smart sensors and smart data. Based on the asymmetry of failure rate between the statuses of bit-0 and bit-1 in the non-volatile memory, as a result
Cihun-Siyong Alex Gong, Yung-Chang Chang, Li-Ren Huang, Chih-Jen Yang, Kung-Ming Ji, Kuen-Long Lu, Jian-Chiun Liou   +6 more
doaj   +1 more source

Atomic‐Scale Visualization of Topotactic Resistive Switching in Epitaxial La0.5Sr0.5CoOx Neuromorphic Memristors

Advanced Functional Materials, EarlyView.
Forming‐free epitaxial Pt/La0.5Sr0.5CoOx (LSCO)/La0.5Sr0.5MnO3 (LSMO) memristors exhibit heterogeneous and partially reversible topotactic switching involving brownmillerite (BM)‐, Grenier (GN)‐like‐, and perovskite (PV)‐like configurations. Atomic‐resolution scanning transmission electron microscopy and in situ transmission electron microscopy resolve
Zi‐Qin Hong, Yen‐Jung Chen, Shih‐Chao Chang, Jui‐yuan Chen, Jan‐Chi Yang, Wen‐Wei Wu   +5 more
wiley   +1 more source

Magneto‐Ionic Devices With Polymer‐Based Electrolytes

Advanced Functional Materials, EarlyView.
Polymer electrolytes are introduced for magneto‐ionic devices based on hydroxide and hydrogen ions. The magneto‐ionic effect results in a pronounced voltage‐controlled variation of coercivity in both devices. The switching speed is in the range of 100 ms.
Markus Gößler, Richard Weber, Michael Sommer, Karin Leistner   +3 more
wiley   +1 more source

Non‐volatile Sliding Ferroelectric Memory Effect in Ultrathin γ‐InSe

Advanced Electronic Materials
Ferroelectrics exhibit field‐tunable non‐volatile polarization, making them essential for modern electronic devices, including memories and sensors. Conventional ferroelectric transistors typically suffer from limited memory windows and poor fatigue ...
Yue Li, Luoyang Ding, Zhixiong Li, Feng Chen, Xiaoyao Weng, Min Zhu, Siyuan Wan, Yangbo Zhou   +7 more
doaj   +1 more source

GeS as an Emerging OTS Material: Atomic Structure and Modeling of ON/OFF Switching

Advanced Functional Materials, EarlyView.
The structural puzzle of glassy GeS, an advanced memory‐selector material, has finally been disentangled, revealing a patchwork of mixed tetrahedral and trigonal species. Under a high electric field, over‐ and under‐coordinated Ge and S defects, together with three‐membered rings, form an interconnected network associated with localized and extended ...
Andrey Tverjanovich, Jörg C. Neuefeind, Chris J. Benmore, Daniele Fontanari, Anton Sokolov, Maxim Khomenko, Shinji Kohara, Aleksei Bytchkov, Takeshi Usuki, Maria Bokova, Mohammad Kassem, Pascal Masselin, Mariana Milochova, Eugene Bychkov   +13 more
wiley   +1 more source

Overview of Radiation Effects on Emerging Non-Volatile Memory Technologies [PDF]

, 2017
In this paper we give an overview of radiation effects in emergent, non-volatile memory technologies. Investigations into radiation hardness of resistive random access memory, ferroelectric random access memory, magneto-resistive random access memory ...
Lazarević, Đorđe R., Lončar, Boris B., Fetahovic, Irfan S., Dolicanin, Edin C.   +3 more
core   +1 more source

Overview of Phase-Change Materials Based Photonic Devices

IEEE Access, 2020
Non-volatile storage memory is widely considered to be one of the most promising candidates to replace dynamic random access memory and even static random access memory.
Jianmin Wang, Lei Wang, Jun Liu
doaj   +1 more source

Non-volatile optoelectronic memory based on a photosensitive dielectric

Nature Communications, 2023
Recently, the optoelectronic memory is capturing growing attention due to its integrated function of sense and memory as well as multilevel storage ability.
Rui Zhu, Huili Liang, Shangfeng Liu, Ye Yuan, Xinqiang Wang, Francis Chi-Chung Ling, Andrej Kuznetsov, Guangyu Zhang, Zengxia Mei   +8 more
doaj   +1 more source

Neuromorphic Devices for Extreme Environments: State‐Variable Reliability and Stabilization Strategies

Advanced Functional Materials, EarlyView.
Neuromorphic devices for extreme environments are interpreted through the physical states that store and process information. Radiation, temperature extremes, and vacuum can perturb vacancies, filaments, trapped charges, polarization, interfaces, and readout signals.
Taehyun Park, Geon Park, Junhyung Cho, Jaechan Song, Wangmyung Choi, Jaehyun Hur, Nicola Gasparini, Hocheon Yoo   +7 more
wiley   +1 more source