Results 91 to 100 of about 11,787,803 (205)

Emerging horizons in phase-change materials for non-volatile memory [PDF]

Phase Change Memory (PCM) technology, particularly utilizing GeTe-based materials, has emerged as a compelling alternative to traditional nonvolatile memory systems, offering significant advancements in speed, scalability, and endurance.
Lei Chen, Le, Yuqiao, Liu, Xingpeng, Zhang, Fabi, Chen, Lei, Haiou Li, Fabi Zhang, Min Hong, Chen, Yan, Xingpeng Liu, Hu, XinXin, Hong, Min, Liu, Haisong, Chengyan Liu, Peng, Ying, Yan Chen, Li, Haiou, Ying Peng, Sun, Tangyou, Yuqiao Le, Liu, Chengyan, Tangyou Sun, XinXin Hu, Haisong Liu   +23 more
core   +1 more source

Force‐Triggered Non‐Volatile Multilevel Mechano‐Optical Memory System for Logic Computation and Image Recognition

Advanced Science
In the big data era, sensing multi‐modal information in memory is highly demanded for the sake of artificial intelligence applications to overcome the limitations of the von Neumann architecture.
Jiaxing Guo, Feng Guo, Hang Yang, Tianhong Zhou, Xiaona Du, Rui Gao, Haisheng Chen, Minghao Hu, Weiwei Liu, Yang Zhang, Dong Tu, Jianhua Hao   +11 more
doaj   +1 more source

Noise‐Tunable Memristor Enabling Programmable Probabilistic Neurons for Frequency‐Selective Time‐Series Signal Encoding

Advanced Materials, EarlyView.
Memristors offer tunable resistance and intrinsic instability, making them promising tunable noise sources. We propose a spiking‐rate‐programmable probabilistic neuron using a Ru/TaOx/Pt memristor, where resistance‐dependent noise enables frequency‐selective encoding.
Do Hoon Kim, Seoeun Jang, Hakseung Rhee, Min Gu Lee, Daehee Kim, Taewook Go, Woon Hyung Cheong, Hanchan Song, Kyung Min Kim   +8 more
wiley   +1 more source

Resistive non-volatile memory devices

, 2009
The review provides a survey of non-volatile, highly scalable memory devices which are based on redox phenomena controlling the resistance of nanoscale memory cells. The classification of the memory effects, the understanding of the underlying mechanisms,
Waser, R., Waser, Rainer
core   +1 more source

Analog Tensor Processing With Carbon Nanotube In‐Memory Matrix Multiplications for Edge Computer Vision Acceleration

Advanced Materials, EarlyView.
This work prototypes a carbon nanotube‐based analog tensor core that performs in‐memory, parallel visual processing. Integrating non‐volatile memories and compact circuits, the core enables high‐speed analog matrix multiplications and can demonstrate accurate three dimensional (3D) spatial transformation and edge detection. With lightweight design, the
Jingfang Pei, Lekai Song, Songwei Liu, Yingyi Wen, Yaoqiang Zhou, Yang Liu, Pengyu Liu, Wenyu Cui, Xin Lu, Teng Ma, Zegao Wang, Guohua Hu   +11 more
wiley   +1 more source

Extreme Bond Ionicity in Mg─Te Chalcogenides for Ultrathin Low Voltage Selector‐Only Memory beyond the Leakage Scaling Limit

Advanced Materials, EarlyView.
Mg─Te chalcogenides address the leakage scaling trade‐off in ultrathin selector‐only memory. Structural partitioning in multiphase Mg─Te, combined with highly ionic Mg─Te bonding and Hf interfacial engineering, supports reliable 5 nm thickness operation at low write voltage with suppressed leakage current, narrow threshold voltage distributions, 10 ns ...
Yoori Seo, Dongmin Kim, Yu Bin Park, Jangseop Lee, Tae Hoon Lee, Hyunsang Hwang   +5 more
wiley   +1 more source

Polypyridyl chromium(III) complexes for non-volatile memory application: impact of the coordination sphere on memory device performance

, 2018
Molecular non-volatile memory devices are deemed to offer remarkable features such as low-cost, high retention times and low power consumption that could possibly catapult their implementation over the contemporary silicon-based devices.
Roy, V.A.L., Kandasamy, Balamurugan, Zhou, Li, Li Zhou, Chi-Chiu Ko, Xu, Zongxiang, V. A. L. Roy, Ganesamoorthi Ramar, Su-Ting Han, Shun-Cheung Cheng, Zongxiang Xu, Ramar, Ganesamoorthi, Ko, Chi-Chiu, Han, Su-Ting, Cheng, Shun-Cheung, Balamurugan Kandasamy, Shishir Venkatesh, Venkatesh, Shishir   +17 more
core   +1 more source

Reliable Sub-Nanosecond Switching of a Perpendicular SOT-MRAM Cell without External Magnetic Field [PDF]

Journal of Systemics, Cybernetics and Informatics, 2018
The steady increase in performance and speed of modern integrated circuits is continuously supported by constant miniaturization of complementary metal-oxide semiconductor (CMOS) devices.
Viktor Sverdlov, Alexander Makarov, Siegfried Selberherr   +2 more
doaj  

Memristive Motion‐Streak Neuron for Spatiotemporal Multiple Object Detection

Advanced Materials, EarlyView.
This work proposes motion‐streak neuron hardware using amorphous In–Ga–Zn–O optoelectronic memristors and dynamic memristors for spatiotemporal multiple‐object detection. The motion streak neuron array processes optical and electrical stimuli, allowing speed‐dependent filament relaxation to encode motion trajectories.
Hyungjun Park, Jin Hong Kim, Hyun Wook Kim, Néstor Ghenzi, Sung Keun Shim, Joon‐Kyu Han, Min Jung Chung, Dong Hoon Shin, Kyung Seok Woo, Cheol Seong Hwang   +9 more
wiley   +1 more source

Volatile Memristive Devices With Tunable Temporal Dynamics For Event‐Based Sensing

Advanced Materials, EarlyView.
Tunable volatile memristive devices can serve various neural‐inspired tasks that require different time windows of information retention. The ionic‐based volatility of the presented Pt/a‐STO/TaOx/Ta device stack can be reproducibly and controllably tuned in multiple ways.
Dimitrios Spithouris, Johannes Hellwig, Hugh Greatorex, Clemens Wittberg, Panagiotis Koutsogiannis, César Magén, Elisabetta Chicca, Regina Dittmann   +7 more
wiley   +1 more source