Results 111 to 120 of about 15,576,567 (291)

Weak In‐Plane Ferromagnetism and Electronic Nematicity in the Distorted Triple‐Q Magnetic Phase of Co1/3TaS2

Advanced Materials, EarlyView.
Co1/3TaS2${\rm Co}_{1/3}{\rm TaS}_{2}$ hosts a triple‐Q noncoplanar antiferromagnetic state with coexisting Z3${\rm Z}_3$ electronic nematicity. We report rotational hysteresis observed in both magnetoresistance and magnetic torque, revealing strongly pinned in‐plane weak ferromagnetic moments in the triple‐Q phase and the magnetism‐driven nature of ...
Joonyoung Choi, Woonghee Cho, Pyeongjae Park, Woun Kang, Je‐Geun Park, Younjung Jo   +5 more
wiley   +1 more source

Excellent Switching Performances of TiON/HZO/MoS2 Ferroelectric Diode

, 2022
1
Yunjeong Hwang, HWANG, HYUNSANG, SEUNYEOL, OH, Yonghun Kim, SEONGJAE, HEO, LAE, YONG JUNG, Seungkwon Hwang, Jung-Dae Kwon, LEE, KYUMIN, JANG, HO JUNG, Byeongjin Park   +10 more
core  

A reliable non‐volatile in‐memory computing associative memory based on spintronic neurons and synapses

Engineering Reports
This article introduces an innovative non‐volatile associative memory (AM) that leverages spintronic synapses, employing magnetic tunnel junctions (MTJ) in conjunction with neurons constructed using carbon nanotube field‐effect transistors (CNTFETs). Our
Mahan Rezaei, Abdolah Amirany, Mohammad Hossein Moaiyeri, Kian Jafari   +3 more
doaj   +1 more source

Epitaxially Integrated Electro‐Optic KNbO3 Thin Films on Silicon

Advanced Materials, EarlyView.
We demonstrate the first epitaxial integration of electro‐optic KNbO3 thin films on silicon using suboxide molecular‐beam epitaxy. Combining adsorption‐controlled molecular‐beam epitaxy, advanced characterization, and phase‐field modeling, we demonstrate phase‐pure crystalline films mirroring bulk crystals with robust Pockels response, enabling future ...
Sankalpa Hazra, Tobias Schwaigert, Yingxin Zhu, Aiden Ross, Muhammad Aminul Haque Chowdhury, Shun‐Li Shang, Sameer Singh, Zhiyu Zhang, Zhe Wang, Brynn Brower, Saugata Sarker, Suchismita Sarker, Zi‐Kui Liu, Rama K. Vasudevan, Long‐Qing Chen, Yang Yang, Darrell G. Schlom, Venkatraman Gopalan   +17 more
wiley   +1 more source

SAP HANA adoption of non-volatile memory

, 2017
Non-Volatile RAM (NVRAM) is a novel class of hardware technology which is an interesting blend of two storage paradigms: byte-addressable DRAM and block-addressable storage (e.g. HDD/SSD).
Daniel Booss, Werner Thesing, Günter Radestock, Ivan Schreter, Akanksha Meghlan, Thomas Willhalm, Robert Schulze, Christian Lemke, Thomas Peh, Mehul Wagle, Muhammad Sharique, Carsten Thiel, Rolando Blanco, Sebastian Seifert, Mihnea Andrei, Surendra Vishnoi   +15 more
core   +1 more source

Force‐Triggered Non‐Volatile Multilevel Mechano‐Optical Memory System for Logic Computation and Image Recognition

Advanced Science
In the big data era, sensing multi‐modal information in memory is highly demanded for the sake of artificial intelligence applications to overcome the limitations of the von Neumann architecture.
Jiaxing Guo, Feng Guo, Hang Yang, Tianhong Zhou, Xiaona Du, Rui Gao, Haisheng Chen, Minghao Hu, Weiwei Liu, Yang Zhang, Dong Tu, Jianhua Hao   +11 more
doaj   +1 more source

Layered Spin‐Crossover Metal‐Organic Frameworks for Light‐Induced Control of Two‐Dimensional Quantum Materials

Advanced Materials, EarlyView.
Spin‐crossover metal‐organic frameworks (SCO‐MOFs) provide a route to control the electronic and magnetic properties of two‐dimensional quantum materials. By integrating a layered SCO‐MOFs with graphene, CrSBr, and NbSe2 nanodevices, thermally and light induced spin transitions induce strain that reversibly modulates charge transport, magnetic memory ...
Carla Boix‐Constant, Alejandro Orellana‐Silla, José Antonio Real, Samuel Mañas‐Valero, Eugenio Coronado   +4 more
wiley   +1 more source

Toward Sub-1V FRAM: Ultra-low Field Operation and Excellent Retention (10y/85°C) by Stack Engineering

, 2022
1
T. Werner, F. Koushan, A. Kashir, HWANG, HYUNSANG, SEUNYEOL, OH, R. Gautam, T. Schenk, M. Schuster, JANG, HO JUNG, S. Mueller   +9 more
core  

Advances in Bio‐Integrated Edge Computing Systems for Smart and Connected Health

Advanced Materials, EarlyView.
This review explores advances in bio‐integrated edge computing for healthcare, focusing on co‐designing computing, sensing, and energy strategies to overcome integration and power challenges for optimized, decentralized operation. ABSTRACT Recent advances in bio‐integrated healthcare technologies have enabled continuous, high‐resolution monitoring and ...
Gyuwon Kim, Seungwon Yoo, Tae Woog Kang, Yunuo Huang, Woon‐Hong Yeo   +4 more
wiley   +1 more source

Thickness‐Defined Transport Regime Toward Near‐Ideal Area‐Type Switching

Advanced Materials, EarlyView.
By thinning the oxide layer, memristors pass from diode‐like and battery‐effect‐dominated behavior toward eventual short‐circuit failure. Within the intermediate 5–6 nm window, they reach a near‐ideal analog area‐type switching regime, featuring symmetric hysteresis, area‐dependent conductance, and continuous linear programming of HRS and LRS with ...
Cuo Wu, Junjie Zhao, Richard Schroedter, Jason Vincent, Hampus Hoffman, Leif Riemenschneider, Abdallh Herbawe, Hao Shen, Ronald Tetzlaff, Stefan Slesazeck, Gianaurelio Cuniberti, Thomas Mikolajick, Benjamin Max   +12 more
wiley   +1 more source