Results 101 to 110 of about 11,787,803 (205)

Securing Non-Volatile Main Memory

open access: yes, 2008
Non-volatile memories provide energy efficiency, tolerance against power failure, and “instant-on” power-up. These memories are likely to replace traditional volatile memory in next-generation laptops and desktops.
Patrick Mcdaniel   +3 more
core  

Toward Pore‐Engineered 3D‐Printed Materials for Sorption Water Harvesting, Interfacial Evaporation, and Radiative Cooling

open access: yesAdvanced Materials, EarlyView.
Water harvesting, radiative cooling, and interfacial solar evaporation are fundamentally governed by coupled heat, mass, and light transport processes. These processes are mediated by pore architecture, including pore size, connectivity, and hierarchical organization.
Dejan J. Trajkovski   +5 more
wiley   +1 more source

Dynamic Random-Access Memory and Non-Volatile Memory Allocation Strategies for Container Tasks

open access: yesEngineering Proceedings
To support multimedia and deep learning applications running on containers within a server, both processor cores and main memory space are critical resources for performance tuning. With the growing memory demands of applications to maintain intermediate
Che-Wei Chang, Chen-Yu Ho
doaj   +1 more source

Topological Spin‐Texture Transitions in van der Waals Magnets Revealed by X‐Ray Fourier Transform Holography

open access: yesAdvanced Materials, EarlyView.
Applied here for the first time to a 2D material, high‐resolution synchrotron x‐ray Fourier transform holography directly images topological spin textures in Fe3GeTe2. Combined with atomistic tight‐binding simulations including itinerant electrons and Rashba spin‐orbit coupling, the approach reveals labyrinth, skyrmion, and mixed phases, and uncovers ...
Sourav Chowdhury   +16 more
wiley   +1 more source

Non-volatile and volatile memory behaviour in oxygenated amorphous carbon electrochemical metallisation devices

open access: yes, 2018
The resistive switching behaviour of oxygenated amorphous carbon electrochemical metallisation devices is investigated. The effect of temperature on the microstructure and composition of the oxygenated carbon matrix is also investigated by annealing in ...
Anders Barlow (8269725)   +4 more
core  

Program Code Regeneration Method for Non-volatile Memory Platform

open access: yes, 2016
Non-volatile memory is a promising material that covers both cache and secondary storage in a memory hierarchy. Many software platforms exploiting non-volatile have been developed and provide user-level programming interfaces.
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core   +1 more source

Descriptors to Dynamics: A Materials and Device Perspective on in‐Materio Physical Reservoir Computing for Neuromorphic Edge Intelligence

open access: yesAdvanced Materials, EarlyView.
Intrinsic material dynamics are harnessed as computational resources for neuromorphic in‐materio physical reservoir computing. Defects, ionic motion, interfaces, percolation, geometry, and biasing shape transient states that provide fading memory, nonlinearity, and high‐dimensional projection for simple readout. A descriptor‐to‐dynamics framework links
Kshitij RB Singh   +5 more
wiley   +1 more source

MoS2/Graphene Floating‐Gate Transistor Toward Non‐Volatile Memory and High‐Precision Synaptic Operations

open access: yesAdvanced Electronic Materials
Molybdenum disulfide (MoS2) and graphene, as two significant members of the two‐dimensional family, have garnered considerable attention for enhanced non‐volatile memory (NVM) applications. Nonetheless, the synaptic behavior of the MoS2/graphene floating‐
Md. Ibrahim Ahmed, Sharnali Islam
doaj   +1 more source

Dual‐State Programmable Oxide Transistor for Time‐Based Cryptography

open access: yesAdvanced Materials, EarlyView.
A DUPOT enables independently tunable Vth and Isat depending on gate bias polarity, producing three‐dimensional dynamical behavior within a transfer characteristic. This behavior originates from charge trapping and oxygen‐ion migration in the HfO2 layer.
Huisu Noh   +9 more
wiley   +1 more source

Low temperature rectifying junctions for crossbar non-volatile memory devices

open access: yes, 2009
ZnO-based Schottky junctions fabricated at low temperature are proposed as selectors for crossbar non-volatile memory devices. Rectifying ratio over 10(7) and forward current density as high as 10(4) A/cm(2) are reported.
PLugli   +8 more
core  

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