Results 111 to 120 of about 13,760,510 (244)

Non-Volatile Memory and Synaptic Characteristics of TiN/CeO_x/Pt RRAM Devices. [PDF]

Materials (Basel), 2022
Ha H, Pyo J, Lee Y, Kim S.
europepmc   +1 more source

Robotics in Ionizing Radiation Environments: Vulnerabilities, Hardening, and Future Directions

Advanced Robotics Research, EarlyView.
Radiation exposure causes cumulative degradation in robotic sensors, actuators, and electronic logic, often leading to undetected failures. This study maps component vulnerabilities, evaluates hardening and shielding strategies, and identifies testing gaps that must be addressed to enable next‐generation radiation‐tolerant robotic systems.
Francis A. K. Djirackor, Josephine T. Djirackor, Amanuel Abrdo Tereda, Sun Yi, Younho Seong   +4 more
wiley   +1 more source

Cognitive Computing with Non-Volatile Memory Elements

Cognitive Computing with Non-Volatile Memory ...
Boybat, Irem, Sandrini, Jury, Burr, Geoffrey W., Sacchetto, Davide, Leblebici, Yusuf   +4 more
core  

An On‐Demand Neuromorphic Vision System Enabled by a Multi‐Paradigm Neuromorphic Device and Hierarchical Reconfigurability Designed from Device to System Level

Advanced Science, EarlyView.
An on‐demand ultra‐reconfigurable intelligent vision system with hierarchical reconfigurability from device to system levels is demonstrated. Through co‐design of a multi‐paradigm device, reconfigurable circuits, and adaptive system architecture/algorithms, the system enables seamless switching among spiking, non‐spiking, neuromorphic imaging (NI), and
Biyi Jiang, Jiayi Xu, Liang Ran, Xinhe Feng, Khalil Harrabi, Yida Li, Longyang Lin, Feichi Zhou   +7 more
wiley   +1 more source

Energy efficient photonic memory based on electrically programmable embedded III-V/Si memristors: switches and filters

Communications Engineering
Over the past few years, extensive work on optical neural networks has been investigated in hopes of achieving orders of magnitude improvement in energy efficiency and compute density via all-optical matrix-vector multiplication. However, these solutions
Stanley Cheung, Bassem Tossoun, Yuan Yuan, Yiwei Peng, Yingtao Hu, Wayne V. Sorin, Geza Kurczveil, Di Liang, Raymond G. Beausoleil   +8 more
doaj   +1 more source

Relieving Compression-Induced Local Wear on Non-Volatile Memory Block via Sliding Writes. [PDF]

Micromachines (Basel), 2023
Jin K, Du Y, Zhang M, Yin Z, Ausavarungnirun R.   +4 more
europepmc   +1 more source

Orbital Magnetic Moment Controlled Converse Magnetoelectric Effect in bcc‐Co3Mn/Fe/V/PMN‐PT Multiferroic Heterostructures

Advanced Science, EarlyView.
Based on orbital magnetic moment control, a material design strategy is proposed for a giant converse magnetoelectric effect in multiferroic heterostructures. This study will pioneer a promising route toward low‐power spintronic devices with an electric field.
Takamasa Usami, Yuichi Murakami, Ryota Watarai, Yu Shiratsuchi, Yoshihiro Gohda, Kohei Hamaya   +5 more
wiley   +1 more source

Gate Metal-Driven Sensing and Memory Bifunctionality in Intrinsically Stretchable Organic Electrochemical Transistors for Soft Neuromorphic Systems. [PDF]

Adv Sci (Weinh)
Intrinsically stretchable OECTs enable bifunctional operations via gate engineering. Polarizable Ag/AgCl gates provide volatile sensing, while Au gates enable non‐volatile memory. The SEBS‐blended channel maintains performance under strain, supporting reliable signal transduction.
Yoon J, Jang J, Jung H, Seong D, Kim D, Jeon Y, Koo JH, Won SM, Son D.   +8 more
europepmc   +2 more sources

Two‐Dimensional Triferroics: From Fundamental Couplings to Multifunctional Applications

Advanced Science, EarlyView.
This graphic summarizes the three main types of currently reported 2D triferroic couplings. From the structural perspective, existing systems can be broadly classified into two categories, which exhibit distinct symmetry features and coupling behaviors. Beyond the lattice difference, a third type involves the interplay among ferroelectricity, magnetism,
Yang Li, Jialin Gong, Zhiqing Li
wiley   +1 more source

Si-Doped HfO₂-Based Ferroelectric Tunnel Junctions with a Composite Energy Barrier for Non-Volatile Memory Applications. [PDF]

Materials (Basel), 2022
Lee Y, Song S, Ham W, Ahn SE.
europepmc   +1 more source