Results 161 to 170 of about 178,824 (287)
Ion Crowding Effect in Unilaterally Downsized Perovskite Memristors
The downscaling of perovskite memristors incorporating monocrystalline nanoplates is accompanied by an ion crowding effect, which greatly enhances the local electric field in the vicinity of electrode. The highly controlled crowding of anions and vacancies results in anisotropic switching characteristics as well as unique morphology modification ...
Conghui Tan +11 more
wiley +1 more source
Nanocrystal-Embedded-Insulator (NEI) Ferroelectric FETs for Negative Capacitance Device and Non-Volatile Memory Applications. [PDF]
Peng Y +6 more
europepmc +1 more source
ABSTRACT Conventional software‐based encryption faces mounting limitations in power efficiency and security, inspiring the development of emerging neuromorphic computing hardware encryption. This study presents a hardware‐level multi‐dimensional encryption paradigm utilizing optoelectronic neuromorphic devices with low energy consumption of 3.3 fJ ...
Bo Sun +3 more
wiley +1 more source
Phenomenological modelling of non-volatile memory threshold voltage shift induced by nonlinear ionization with a femtosecond laser. [PDF]
Chiquet P +8 more
europepmc +1 more source
This study presents a wireless, non‐invasive strategy for neural repair by developing a biodegradable piezoelectric dural patch that, under transcranial ultrasound, generates localized electrical fields to drive endogenous neural stem cells toward neuronal differentiation and functional integration.
Pengbo Zhou +7 more
wiley +1 more source
Integrated photonics with programmable non-volatile memory. [PDF]
Song JF +10 more
europepmc +1 more source
Two‐Dimensional Triferroics: From Fundamental Couplings to Multifunctional Applications
This graphic summarizes the three main types of currently reported 2D triferroic couplings. From the structural perspective, existing systems can be broadly classified into two categories, which exhibit distinct symmetry features and coupling behaviors. Beyond the lattice difference, a third type involves the interplay among ferroelectricity, magnetism,
Yang Li, Jialin Gong, Zhiqing Li
wiley +1 more source
The Characteristics of Transparent Non-Volatile Memory Devices Employing Si-Rich SiOX as a Charge Trapping Layer and Indium-Tin-Zinc-Oxide. [PDF]
Park JH, Shin MH, Yi JS.
europepmc +1 more source
ABSTRACT Methane's efficient catalytic removal is vital for sustainable development. Bimetallic catalysts, though promising for methane activation, pose a design challenge due to their complex compositional space. This work introduces an integrated framework that combines high‐throughput density functional theory (DFT) and interpretable machine ...
Mingzhang Pan +8 more
wiley +1 more source
Non-volatile memory devices with redox-active diruthenium molecular compound. [PDF]
Pookpanratana S +7 more
europepmc +1 more source

