Results 161 to 170 of about 178,893 (267)

Transmission of Radio‐Frequency Waves and Nuclear Magnetic Resonance in Lanthanum Superhydrides

Advanced Science, EarlyView.
1H NMR and radio‐frequency transmission measurements of lanthanum superhydrides at 165 GPa reveals a transition at 260–280 K by a strong suppression of the signal intensity, significant changes in NMR spectra, including a dramatic decrease of the relaxation rate 1/T1T, and pronounced shielding effect, which may have a superconducting nature.
Dmitrii V. Semenok, Florian Bärtl, Di Zhou, Toni Helm, Sven Luther, Joachim Wosnitza, Ivan A. Troyan, Viktor V. Struzhkin, Hannes Kühne   +8 more
wiley   +1 more source

Nanocrystal-Embedded-Insulator (NEI) Ferroelectric FETs for Negative Capacitance Device and Non-Volatile Memory Applications. [PDF]

Nanoscale Res Lett, 2019
Peng Y, Han G, Xiao W, Wu J, Liu Y, Zhang J, Hao Y.   +6 more
europepmc   +1 more source

Phase‐Engineered Non‐Degenerate Sliding Ferroelectricity Enables Tunable Photovoltaics in Monolayer Janus In2S2Se

Advanced Science, EarlyView.
The meticulously phase‐engineered non‐degenerate sliding ferroelectricities in monolayer In2S2Se, along with their tunable impacts on photovoltaic performances, introduce innovative perspectives for the future design and optimization of 2D advanced photovoltaic devices.
Yixuan Li, Qiang Wang, Keying Han, Yitong Liang, Kai Kong, Yan Liang, Thomas Frauenheim, Xingshuai Lv, Defeng Guo, Bin Wang   +9 more
wiley   +1 more source

Phenomenological modelling of non-volatile memory threshold voltage shift induced by nonlinear ionization with a femtosecond laser. [PDF]

Sci Rep, 2019
Chiquet P, Chambonneau M, Della Marca V, Postel-Pellerin J, Canet P, Souiki-Figuigui S, Idda G, Portal JM, Grojo D.   +8 more
europepmc   +1 more source

Non‐Volatile Phase Modulation with Ultralow Energy Consumption Enabled by 2D Ferroelectric/TMD Heterostructures

Advanced Science, EarlyView.
We demonstrate a hybrid WS2/CuInP2S6/graphene heterostructure integrated on a silicon nitride microring resonator for non‐volatile optical phase modulation with ultra‐low energy consumption and low insertion loss. While CIPS alone does not provide efficient optical index modulation, the engineered proposed device structure converts ferroelctric domain ...
Lalit Singh, Shi Guo, Yuhui Yang, Sholehin Juperi, Rui Yu, Xiangxin Gong, Jeremy Leong, Sung‐Gyu Lee, Qingyun Wu, Lay Kee Ang, Sang Hoon Chae   +10 more
wiley   +1 more source

Integrated photonics with programmable non-volatile memory. [PDF]

Sci Rep, 2016
Song JF, Luo XS, Lim AE, Li C, Fang Q, Liow TY, Jia LX, Tu XG, Huang Y, Zhou HF, Lo GQ.   +10 more
europepmc   +1 more source

Cation‐Driven Valence Change Mechanism in 2D AgCrS2 for Ultralow‐Power and Reliable Memristors

Advanced Science, EarlyView.
A 2D AgCrS2 volatile memristor is shown to switch via a cation‐driven valence change mechanism, where Ag+ reversibly intercalates into tetrahedral vacancies between CrS2 layers to form a conductive Ag2CrS2 pathway without elemental Ag metallization. The device exhibits 0.2 V switching, nA‐compliance power down to 200 pW, and endurance beyond 3 × 105 ...
Yueqi Su, Minghao Wang, Xiaolin Tai, Yuhua Liu, Yue Lin, Yuqiao Guo, Jing Peng, Yi Xie, Changzheng Wu   +8 more
wiley   +1 more source

The Characteristics of Transparent Non-Volatile Memory Devices Employing Si-Rich SiO_X as a Charge Trapping Layer and Indium-Tin-Zinc-Oxide. [PDF]

Nanomaterials (Basel), 2019
Park JH, Shin MH, Yi JS.
europepmc   +1 more source

In Situ Quantization with Memory‐Transistor Transfer Unit Based on Electrochemical Random‐Access Memory for Edge Applications

Advanced Science, EarlyView.
By combining ionic nonvolatile memories and transistors, this work proposes a compact synaptic unit to enable low‐precision neural network training. The design supports in situ weight quantization without extra programming and achieves accuracy comparable to ideal methods. This work obtains energy consumption advantage of 25.51× (ECRAM) and 4.84× (RRAM)
Zhen Yang, Yuxiang Yang, Baiqian Wang, Yaoyu Tao, Zelun Pan, Lei Cai, Teng Zhang, Longhao Yan, Xianbin Li, Yuchao Yang   +9 more
wiley   +1 more source

Non-volatile memory devices with redox-active diruthenium molecular compound. [PDF]

J Phys Condens Matter, 2016
Pookpanratana S, Zhu H, Bittle EG, Natoli SN, Ren T, Richter CA, Li Q, Hacker CA.   +7 more
europepmc   +1 more source