Results 181 to 190 of about 19,012 (258)

Non-Volatile Phase Modulation with Ultralow Energy Consumption Enabled by 2D Ferroelectric/TMD Heterostructures. [PDF]

Adv Sci (Weinh)
Singh L, Guo S, Yang Y, Juperi S, Yu R, Gong X, Leong J, Lee SG, Wu Q, Ang LK, Chae SH.   +10 more
europepmc   +1 more source

On the Role of Preprocessing and Memristor Dynamics in Reservoir Computing for Image Classification

Advanced Electronic Materials, EarlyView.
ABSTRACT Reservoir computing (RC) is an emerging recurrent neural network architecture that has attracted growing attention for its low training cost and modest hardware requirements. Memristor‐based circuits are particularly promising for RC, as their intrinsic dynamics can reduce network size and parameter overhead in tasks such as time‐series ...
Rishona Daniels, Duna Wattad, Ronny Ronen, David Saad, Shahar Kvatinsky   +4 more
wiley   +1 more source

Electric-field-driven magnetic domain wall dynamics: a multiferroic route toward scalable and low-power spintronic logic. [PDF]

Nanoscale Adv
Zhang P, Weng J, Sun Z, Wang C, He S, Lu J, Qiu ZQ, Hong J.   +7 more
europepmc   +1 more source

Logic Functionality and Circuit Design of In2Se3‐Based Split‐Gate Ferroelectric Field‐Effect Transistor for Zero‐Trust Applications

Advanced Electronic Materials, EarlyView.
ABSTRACT Van der Waals ferroelectric materials are emerging as key building blocks for future logic devices and integrated circuits. Among them, α‐In2Se3 offers a unique combination of robust room temperature ferroelectricity and semiconducting behavior.
Ankita Ram, Cédric Marchand, Shehr Bano Masood, Aymen Mahmoudi, Takashi Taniguchi, Kenji Watanabe, Bernard Doudin, Abdelkarim Ouerghi, Ian O'Connor, Alexei Gruverman, Jean‐François Dayen   +10 more
wiley   +1 more source

Dual-directional CIM-based non-volatile SRAM for instant-on/off energy-constrained edge AI devices. [PDF]

Sci Rep
Hemmasi SP, Moaiyeri MH, Eslami N, Ebrahimi B.   +3 more
europepmc   +1 more source

Experimental Demonstration of Temporally Aware Fault‐Tolerant Sensor Fusion Using Memristive Associative Learning

Advanced Electronic Materials, EarlyView.
In dynamic driving scenarios, the proposed approach ensures only temporally aligned sensor inputs to make driving decisions, preventing false activations. By enabling selective hardware‐level learning, it achieves fast, reliable responses under noisy conditions.
Kapil Bhardwaj, Ashfak Nehal, Dmitrii Semenov, Roman Sotner, Sayani Majumdar   +4 more
wiley   +1 more source

2D Materials Powering Neuromorphic Intelligence. [PDF]

Nanomicro Lett
Kazmi J, Ahmad W, Naqi M, Abbas Y, Abbas A, Wang P, Mohamed MA, Rosei F, Wang ZM, Song H.   +9 more
europepmc   +1 more source

Enhanced Resistive Switching Uniformity in Tantalum Oxide Memristor Devices via Copper Implantation

Advanced Electronic Materials, EarlyView.
Metal oxide memristor devices typically suffer from uncontrolled forming processes and limited resistive switching uniformity due to the stochastic formation of an oxygen vacancy filament. Improved resistive switching uniformity in Ta2O5 memristor is developed by Cu implantation in the switching oxide.
Shaochuan Chen, Ilia Valov
wiley   +1 more source

S-atom dislocation-induced room-temperature ferroelectricity in two-dimensional α-MnS semiconductor. [PDF]

Nat Commun
Huang L, Wu J, Dai CM, Du R, Yang J, Peng Y, Li X, Sun H, Song L, Li Y, Xu R, Xiao C, Jiang Y, Du Z, Li Y, Wen Y, Shi J, He J.   +17 more
europepmc   +1 more source