Results 181 to 190 of about 128,528 (304)

Boosting Ferroelectricity: 2D and Polymer Ferroelectric Hybrids Enabling Ambipolar Nonvolatile MoS2 Memory Transistor

Advanced Science, EarlyView.
Two‐dimensional CuInP2S6 nanosheets are incorporated into a P(VDF‐TrFE) matrix to induce polarization‐cooperative ferroelectric coupling. The resulting P(VDF‐TrFE)/CuInP2S6 hybrid film exhibits reinforced ferroelectric ordering and reduced coercive electric fields compared with pristine P(VDF‐TrFE).
Yeonsu Jeong, Honglei Wang, Pietro Tordi, Ying Chieh Hu, Adrián Tamayo, Bing Wu, Hyun Soo Ahn, Zdenek Sofer, Jong Hoon Jung, Massimo Bonini, Paolo Samorì   +10 more
wiley   +1 more source

CuInS₂ quantum dots-based unipolar resistive switching for non-volatile memory applications. [PDF]

RSC Adv
Sharma H, Saini N, Lalita, Kaushik D, Kumar A, Srivastava R.   +5 more
europepmc   +1 more source

Ethical and Frugal Approaches to Animal Experimentation in Bioelectronics and Neural Engineering—An Invertebrate Renaissance?

Advanced Electronic Materials, EarlyView.
Invertebrates are the classic neuroscience models and should make a comeback. Invertebrate organisms can be a more ethical and cost‐effective way to move bioelectronics research forward more rapidly. ABSTRACT The accelerating development of bioelectronic neural interfaces has brought increased attention to ethical considerations surrounding in vivo ...
Eric Daniel Głowacki
wiley   +1 more source

Influence of Bottom Electrodes on the Ferroelectric Stability of AlScN Film at High Temperatures

Advanced Electronic Materials, EarlyView.
The thermal stability of AlScN depends on the bottom electrode. When the bottom electrode possesses compressive stress, tensile strain develops in the AlScN upon thermal annealing, reducing the switching barrier. When the bottom electrode forms a coherent interface with AlScN, significant tensile strain and defects are generated in the AlScN layer ...
Kyung Do Kim, Seung Kyu Ryoo, Min Kyu Yeom, Dong Jae Kim, Cheol Seong Hwang   +4 more
wiley   +1 more source

Information can be stored in the human skin memristor which has non-volatile memory. [PDF]

Sci Rep, 2019
Pabst O, Martinsen ØG, Chua L.
europepmc   +1 more source

Non-volatile memory re-programming using virtualization

reservedThis report presents the research and implementation work conducted for the thesis entitled "Non-volatile memory re-programming". The project explores an innovative approach to updating virtualization environment on microcontrollers ...
GHARBI, RANIA
core  

RRAM Variability Harvesting for CIM‐Integrated TRNG

Advanced Electronic Materials, EarlyView.
This work demonstrates a compute‐in‐memory‐compatible true random number generator that harvests intrinsic cycle‐to‐cycle variability from a 1T1R RRAM array. Parallel entropy extraction enables high‐throughput bit generation without dedicated circuits. This approach achieves NIST‐compliant randomness and low per‐bit energy, offering a scalable hardware
Ankit Bende, Gokulnath Rajendran, Regina Dittmann, Anupam Chattopadhyay, Vikas Rana   +4 more
wiley   +1 more source

Nanocrystal-Embedded-Insulator (NEI) Ferroelectric FETs for Negative Capacitance Device and Non-Volatile Memory Applications. [PDF]

Nanoscale Res Lett, 2019
Peng Y, Han G, Xiao W, Wu J, Liu Y, Zhang J, Hao Y.   +6 more
europepmc   +1 more source

Exfoliated‐MoS2 Gradual Resistive Switching Devices as Artificial Synapses

Advanced Electronic Materials, EarlyView.
A vertical memristor based on untreated, exfoliated MoS2 is presented, revealing gradual resistive switching governed by Schottky barrier modulation at the MoS2/metal interface from the trapping/detrapping of charges. Furthermore, the device emulates synaptic‐like plasticity functions, including: potentiation, depression, and spike‐amplitude‐dependent ...
Deianira Fejzaj, Richard Schroedter, Thomas Mikolajick, André Heinzig   +3 more
wiley   +1 more source

Phenomenological modelling of non-volatile memory threshold voltage shift induced by nonlinear ionization with a femtosecond laser. [PDF]

Sci Rep, 2019
Chiquet P, Chambonneau M, Della Marca V, Postel-Pellerin J, Canet P, Souiki-Figuigui S, Idda G, Portal JM, Grojo D.   +8 more
europepmc   +1 more source