Advanced Electronic Materials, EarlyView.A lead‐free perovskite memristive solar cell structure that call emulate both synaptic and neuronal functions controlled by light and electric fields depending on top electrode type. ABSTRACT Memristive devices based on halide perovskites hold strong promise to provide energy‐efficient systems for the Internet of Things (IoT); however, lead (Pb ...
Michalis Loizos +4 more
wiley +1 more source
Integrated photonics with programmable non-volatile memory. [PDF]
Sci Rep, 2016 Song JF +10 more
europepmc +1 more source
Low‐Power Control Of Resistance Switching Transitions in First‐Order Memristors
Advanced Electronic Materials, EarlyView.Joule losses are a serious concern in modern integrated circuit design. In this regard, minimizing the energy necessary for programming memristors should be handled with care. This manuscript presents an optimal control framework, allowing to derive energy‐efficient programming voltage protocols for resistance switching devices. Following this approach,
Valeriy A. Slipko +3 more
wiley +1 more source
The Characteristics of Transparent Non-Volatile Memory Devices Employing Si-Rich SiOX as a Charge Trapping Layer and Indium-Tin-Zinc-Oxide. [PDF]
Nanomaterials (Basel), 2019 Park JH, Shin MH, Yi JS.
europepmc +1 more source
Monolithic Co‐Integration of Vertical FET and Memristor for 1T1R Cell
Advanced Electronic Materials, EarlyView.This work demonstrates a vertically integrated one‐transistor–one‐memristor (1T1R) cell by stacking a MoS2 vertical field‐effect transistor (VFET) with a mortise–tenon‐shaped (MTS) memristor. This compact architecture not only exhibits highly uniform resistive switching characteristics but also provides a strategy for constructing densely packed ...
Fubo Jiao +15 more
wiley +1 more source
Non-volatile memory devices with redox-active diruthenium molecular compound. [PDF]
J Phys Condens Matter, 2016 Pookpanratana S +7 more
europepmc +1 more source
Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration
Advanced Electronic Materials, EarlyView.Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song +10 more
wiley +1 more source
Effect of Bilayer CeO2-x/ZnO and ZnO/CeO2-x Heterostructures and Electroforming Polarity on Switching Properties of Non-volatile Memory. [PDF]
Nanoscale Res Lett, 2018 Ismail M +6 more
europepmc +1 more source
Model‐Based Time‐Modulated Write Algorithm for 1R Analog Memristive Crossbar Arrays
Advanced Electronic Materials, EarlyView.A novel model‐based time‐modulated write algorithm efficiently programs analog 1R memristive crossbar arrays by varying pulse duration at a fixed voltage. By leveraging a physics‐based compact model and a dynamic gain mechanism, this approach overcomes device nonlinearities and parasitic effects.
Richard Schroedter +7 more
wiley +1 more source
DNA multi-bit non-volatile memory and bit-shifting operations using addressable electrode arrays and electric field-induced hybridization. [PDF]
Nat Commun, 2018 Song Y, Kim S, Heller MJ, Huang X.
europepmc +1 more source