Results 211 to 220 of about 13,760,510 (244)

Highly Linear Perovskite Synapses for Neuromorphic Computing

Advanced Science, EarlyView.
Voltage spikes applied to an Au/ACI‐phase perovskite/ITO memristor emulate the ionic signaling of a biological synapse, generating a tunable postsynaptic current. The vertically aligned perovskite film confines iodide‐vacancy migration, enabling highly linear, and symmetric conductance updates with 100 states and 5.5 aJ per event. Such synapses sustain
Zhongwen Sun, Boyu Wan, Zifan Zhang, Zhikai Wang, Xuan Zhao, Haonan Si, Qingliang Liao, Yue Zhang   +7 more
wiley   +1 more source

Blocking Honeybee Preference for Neonicotinoids by Interfering With Dopamine Signaling

Advanced Science, EarlyView.
Honeybees (Apis mellifera) paradoxically prefer nectar containing the harmful neonicotinoid thiamethoxam. This preference is associated with transient brain dopamine elevation during proboscis extension reflex (PER) responses and active feeding, and is reduced by the dopamine receptor antagonist fluphenazine.
Jing Li, Yuan Ge, Wangjiang Feng, David C. Lyon, Pingli Dai, Yong‐Jun Liu   +5 more
wiley   +1 more source

Dynamic Supercooled Crystal–Gels for Ultrafast, Reversible Mechanical Adaptative Materials

Advanced Science, EarlyView.
A dynamic supercooled crystal–gel mimics starfish tissue by storing non‐equilibrium energy in a metastable liquid. A gentle touch triggers templated crystallization, producing a 2596‐fold stiffness increase with negligible volume change. The lattice disintegrates reversibly under humidity or warmth.
Yuesong Lv, Hao Feng, Zhangqin Yang, Jianping Yin, Hanfei Li, Bo Zhou, Yuyang Meng, Yuntong Su, Xinxing Zhang, Xibo Pei   +9 more
wiley   +1 more source

Chip‐Level Voltage Controlled Magnetic p‐Bits Array with Variation Compensation for Stochastic Neural Network Computation

Advanced Science, EarlyView.
A chip‐level VCMA‐MTJ array is demonstrated for stochastic neural‐network computing. Combined with a tail‐truncation strategy to compensate for device‐to‐device variations, it establishes a hardware–software co‐design approach for scalable probabilistic computing.
Jiachen Bao, Songsong Li, Ruizhi Ren, Zheng Zhu, Di Wu, Jiayong Wang, Minggao Zuo, Mingke Li, Duanzihua Cheng, Jianyu Lv, Lintong Zou, Chuyue Liu, Wangyang Hu, Yi Cao, Yuesheng Li, Guanghua Yu   +15 more
wiley   +1 more source

Interface‐Mediated Self‐Rectifying CsCuCl3 Memristors With Tunable Thresholds for Reconfigurable Neuromorphic Computing

Advanced Science, EarlyView.
Interface‐mediated CsCuCl3 memristors achieve self‐rectification and tunable thresholds, enabling selector‐free 8 × 8 arrays with > 105 ON/OFF and > 104 rectification. Supporting dual‐mode neuromorphic computing, negative thresholds preserve low‐light recognition accuracy (91%), while positive thresholds enable sparsity‐aware edge computing.
Qingwei Shi, Mufan Zhu, Song He, Zhen Yan, Yuezhong Lu, Shuaidi Wu, Wenju Xie, Xiaofeng Wang, Baochang Cheng, Jie Zhao   +9 more
wiley   +1 more source

Epigenetic and RNA-mediated regulation of plant VOC biosynthesis and signalling. [PDF]

Front Plant Sci
Boba A, Domańska A, Kulma A, Nowosad K, Bujak H, Kostyn K.   +5 more
europepmc   +1 more source

Exfoliated‐MoS2 Gradual Resistive Switching Devices as Artificial Synapses

Advanced Electronic Materials, EarlyView.
A vertical memristor based on untreated, exfoliated MoS2 is presented, revealing gradual resistive switching governed by Schottky barrier modulation at the MoS2/metal interface from the trapping/detrapping of charges. Furthermore, the device emulates synaptic‐like plasticity functions, including: potentiation, depression, and spike‐amplitude‐dependent ...
Deianira Fejzaj, Richard Schroedter, Thomas Mikolajick, André Heinzig   +3 more
wiley   +1 more source

Ultrafast non-volatile charge storage and mid-infrared photoluminescence in LuminoMem tellurium devices for in-memory computing. [PDF]

Nat Commun
Liang D, Wang S, Wang Y, Li D, Chen Y, Cheng B, Qin M, Yang D, Sheng J, Liu H, Li L, Zeng C, Sun D, Pan A, Liu J.   +14 more
europepmc   +1 more source

Low‐Power Control Of Resistance Switching Transitions in First‐Order Memristors

Advanced Electronic Materials, EarlyView.
Joule losses are a serious concern in modern integrated circuit design. In this regard, minimizing the energy necessary for programming memristors should be handled with care. This manuscript presents an optimal control framework, allowing to derive energy‐efficient programming voltage protocols for resistance switching devices. Following this approach,
Valeriy A. Slipko, Alon Ascoli, Fernando Corinto, Yuriy V. Pershin   +3 more
wiley   +1 more source

Ferroelectric Hafnium Oxide for In-Memory Computing: Advancing Devices, Circuit Architectures, and System-Level Integration. [PDF]

Micromachines (Basel)
He C, Li W, Li J, Li Q, Xie Z, Du T.
europepmc   +1 more source