Results 211 to 220 of about 128,528 (304)

SPICE‐Compatible Compact Modeling of Cuprate‐Based Memristors Across a Wide Temperature Range

Advanced Electronic Materials, EarlyView.
A physics‐guided compact model for YBCO memristors is introduced, incorporating carrier trapping, field‐induced detrapping, and a differential balance equation to describe their switching dynamics. The model is compared with experiments and implemented in LTspice, allowing realistic circuit‐level simulations.
Thomas Günkel, Aleix Barrera, Lluís Balcells, Narcís Mestres, Enrique Miranda, Anna Palau, Jordi Suñé   +6 more
wiley   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

On the Role of Preprocessing and Memristor Dynamics in Reservoir Computing for Image Classification

Advanced Electronic Materials, EarlyView.
ABSTRACT Reservoir computing (RC) is an emerging recurrent neural network architecture that has attracted growing attention for its low training cost and modest hardware requirements. Memristor‐based circuits are particularly promising for RC, as their intrinsic dynamics can reduce network size and parameter overhead in tasks such as time‐series ...
Rishona Daniels, Duna Wattad, Ronny Ronen, David Saad, Shahar Kvatinsky   +4 more
wiley   +1 more source

Logic Functionality and Circuit Design of In2Se3‐Based Split‐Gate Ferroelectric Field‐Effect Transistor for Zero‐Trust Applications

Advanced Electronic Materials, EarlyView.
ABSTRACT Van der Waals ferroelectric materials are emerging as key building blocks for future logic devices and integrated circuits. Among them, α‐In2Se3 offers a unique combination of robust room temperature ferroelectricity and semiconducting behavior.
Ankita Ram, Cédric Marchand, Shehr Bano Masood, Aymen Mahmoudi, Takashi Taniguchi, Kenji Watanabe, Bernard Doudin, Abdelkarim Ouerghi, Ian O'Connor, Alexei Gruverman, Jean‐François Dayen   +10 more
wiley   +1 more source

Experimental Demonstration of Temporally Aware Fault‐Tolerant Sensor Fusion Using Memristive Associative Learning

Advanced Electronic Materials, EarlyView.
In dynamic driving scenarios, the proposed approach ensures only temporally aligned sensor inputs to make driving decisions, preventing false activations. By enabling selective hardware‐level learning, it achieves fast, reliable responses under noisy conditions.
Kapil Bhardwaj, Ashfak Nehal, Dmitrii Semenov, Roman Sotner, Sayani Majumdar   +4 more
wiley   +1 more source

Enhanced Resistive Switching Uniformity in Tantalum Oxide Memristor Devices via Copper Implantation

Advanced Electronic Materials, EarlyView.
Metal oxide memristor devices typically suffer from uncontrolled forming processes and limited resistive switching uniformity due to the stochastic formation of an oxygen vacancy filament. Improved resistive switching uniformity in Ta2O5 memristor is developed by Cu implantation in the switching oxide.
Shaochuan Chen, Ilia Valov
wiley   +1 more source

Non-volatile memory based on the ferroelectric photovoltaic effect. [PDF]

Nat Commun, 2013
Guo R, You L, Zhou Y, Lim ZS, Zou X, Chen L, Ramesh R, Wang J.   +7 more
europepmc   +1 more source

Remarkable Electric Field‐Controlled Magnetism in La/Sm Co‐Substituted BiFeO3 Multiferroic Ceramics

Advanced Electronic Materials, EarlyView.
The remarkable electric field‐controlled magnetism (change of Mr reaches up to 62.7%) in La/Sm co‐substituted BiFeO3 ceramics, originating from the electric field‐induced phase transition of Pna21/R3c, is achieved by enhancing the dielectric strength. Moreover, the significant improvement in ferroelectricity is also determined after the electric field ...
Qing Tian Li, Xiao Li Zhu, Xiao Qiang Liu, Xiang Ming Chen   +3 more
wiley   +1 more source

Discovery of an Ideal HgO12 Icosahedron and Magnetodielectric Coupling in HgCu3Ti4O12

Advanced Electronic Materials, EarlyView.
HgCu3Ti4O12, an A‐site‐ordered quadruple perovskite with a perfectly regular HgO12 coordination, has been synthesized for the first time using high‐pressure methods. The material shows antiferromagnetic ordering at 31 K together with an intrinsic dielectric anomaly, implying possible magnetodielectric coupling.
Haoyu Zheng, Jianfa Zhao, Jun Deng, Lei Duan, Xudong Shen, Zhiwei Hu, Luchuan Shi, Yuling Dai, Xiaoming Chen, Xubin Ye, Jun Zhang, Wenmin Li, Zheng Deng, Xiancheng Wang, Chang‐Yang Kuo, Chien‐Te Chen, Youwen Long, Runze Yu, Changjiang Xiao, Changqing Jin   +19 more
wiley   +1 more source

Understanding Egg Price Volatility and Policy Implications in the U.S. With Machine Learning

Applied Economic Perspectives and Policy, EarlyView.
ABSTRACT Eggs are an inexpensive and sustainable source of proteins, but volatility in the U.S. egg prices has intensified in recent years, raising concerns over food affordability and market stability. This study examines the drivers of U.S. egg price dynamics over 2004–2025 using a two‐stage framework that combines LASSO‐based variable selection with
Xuemei Zhao, Simon Meister, Lucie Maruejols, Xiaohua Yu   +3 more
wiley   +1 more source