Results 201 to 210 of about 11,806,743 (291)
An antiferroelectric tunnel junction serves as a reservoir computing node, where field‐induced phase transitions and spontaneous ZrO2 relaxation deliver nonlinear fading memory. An In‐Ga‐Zn oxide interlayer enlarges the memory margin and multibit state richness.
Taegyu Kwon +13 more
wiley +1 more source
Non-volatile memory devices with redox-active diruthenium molecular compound. [PDF]
Pookpanratana S +7 more
europepmc +1 more source
Integration of Reconfigurable p‐Bit and 1R Crossbar Array for Memristive Probabilistic Computing
A memristive probabilistic computing system is demonstrated by integrating stochastic p‐bits based on volatile memristors with a 1R crossbar array encoding interaction weights. The system performs weighted‐sum operations across the array and updates p‐bits iteratively.
Keunho Soh +7 more
wiley +1 more source
Effect of Bilayer CeO2-x/ZnO and ZnO/CeO2-x Heterostructures and Electroforming Polarity on Switching Properties of Non-volatile Memory. [PDF]
Ismail M +6 more
europepmc +1 more source
HfO2‐based ferroelectrics exhibit wake‐up and fatigue behaviors during electrical cycling, significantly affecting device endurance and reliability. These phenomena are governed by defect dynamics, including oxygen vacancy redistribution and charge trapping.
Hongseok Kim +6 more
wiley +1 more source
Non-volatile memory re-programming using virtualization
reservedThis report presents the research and implementation work conducted for the thesis entitled "Non-volatile memory re-programming". The project explores an innovative approach to updating virtualization environment on microcontrollers ...
GHARBI, RANIA
core
A soft hybrid multi‐wavelength PPG wearable acquires neonatal signals. Synchronized PPG and invasive ABP data are segmented into fixed windows. A 1D‐EfficientNet model predicts segment‐level SBP and DBP. Model performance is examined with retrospective subgroup analysis across acquisition conditions.
Wenqi Shi +12 more
wiley +1 more source
A magneto‐ionic security‐by‐materials‐design strategy exploits voltage‐driven N3– migration in selectively contacted FeCoN dots, creating reconfigurable sub‐15 nm ferromagnetic sublayers with deterministic and/or probabilistic (single‐domain↔vortex) states, voltage‐tunable probabilities and fully stochastic orientation/chirality.
Irena Spasojevic +4 more
wiley +1 more source
Non‐volatile voltage control of magnetic configurations is achieved in a strain‐coupled multiferroic heterostructure. Voltage pulses reversibly interconvert giant single‐domain and multidomain magnetic states, which remain stable at zero applied voltage. ABSTRACT Voltage control of magnetic states in multiferroic heterostructures represents a promising
M. Ghidini +11 more
wiley +1 more source
Battery‐Inspired Electrochemical Synapses for Neuromorphic Applications
Battery‐ion‐inspired synaptic devices integrate diverse electrolyte systems (solid, ion‐gel, liquid) with transition metal oxides, two‐dimensional materials, and organic channels to regulate ion‐electron coupling. By tailoring ion transport and host interactions, these platforms enable controllable plasticity and energy‐efficient implementations for ...
Won Woo Lee +6 more
wiley +1 more source

