Results 221 to 230 of about 13,760,510 (244)

Monolithic Co‐Integration of Vertical FET and Memristor for 1T1R Cell

Advanced Electronic Materials, EarlyView.
This work demonstrates a vertically integrated one‐transistor–one‐memristor (1T1R) cell by stacking a MoS2 vertical field‐effect transistor (VFET) with a mortise–tenon‐shaped (MTS) memristor. This compact architecture not only exhibits highly uniform resistive switching characteristics but also provides a strategy for constructing densely packed ...
Fubo Jiao, Weiqi Dang, Gong‐Jie Ruan, Jiameng Sun, Xiaoyu Sun, Dehe Kong, Yinzhi Huang, Yuxuan Yuan, Qin Liu, Sicheng Chen, Long Zhao, Cong Wang, Pengfei Wang, Chen Pan, Yajun Fu, Shi‐Jun Liang   +15 more
wiley   +1 more source

Wide field-of-view anisotropic optoelectronic resistive memory for monocular in-sensor 3D motion perception and localization system. [PDF]

Nat Commun
Wang Z, Jiang B, Pan R, Ran L, Tang H, Harrabi K, Liu Y, Lin L, Zhou F.   +8 more
europepmc   +1 more source

Gate-imprinted memory and light-induced erasure of superconductivity at KTaO₃-based interfaces. [PDF]

Nat Commun
Chen Z, Ran P, Dong MD, Sun J, Li F, Yao Z, Liu L, Wu J, Jiang J, Cheng ZG.   +9 more
europepmc   +1 more source

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