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2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers, 2006
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Volatile/Non-Volatile Memory Cell
2011The invention concerns a memory device comprising at least one memory cell comprising: a first transistor (102) coupled between a first storage node (106) and a first resistance switching element (202) programmed to have a first resistance; and a second transistor (104) coupled between a second storage node (108) and a second resistance switching ...
Guillemenet, Yoann +4 more
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