Results 231 to 240 of about 304,113 (304)

Transistor‐Level Activation Functions via Two‐Gate Designs: From Analog Sigmoid and Gaussian Control to Real‐Time Hardware Demonstrations

open access: yesAdvanced Materials, EarlyView.
Screen gate‐based transistors are presented, enabling tunable analog sigmoid and Gaussian activations. The SA‐transistor improves MRI classification accuracy, while the GA‐transistor supports precise Gaussian kernel tuning for forecasting. Both functions are implemented in a single device, offering compact, energy‐efficient analog AI processing ...
Junhyung Cho   +9 more
wiley   +1 more source

Directional Flow of Confined Polaritons in CrSBr

open access: yesAdvanced Materials, EarlyView.
CrSBr, a layered magnetic semiconductor, naturally channels self‐hybridized excitonpolaritons into highly directional flow. Its intrinsic optical anisotropy, high refractive index, and strong lightmatter coupling enable long‐range guided modes along the a‐axis, with propagation lengths set by their excitonphoton admixture.
Pratap Chandra Adak   +10 more
wiley   +1 more source

Polyimide‐Linked Hexaazatriphenylene‐Based Porous Organic Polymer with Multiple Redox‐Active Sites as a High‐Capacity Organic Cathode for Lithium‐Ion Batteries

open access: yesAdvanced Materials, EarlyView.
A high‐capacity polyimide‐linked porous organic polymer (HAT‐PTO) incorporating numerous redox‐active centers is synthesized via a hydrothermal reaction, delivering a high theoretical capacity of 484 mAh g−1. In situ hybridization with carboxyl‐functionalized multiwalled carbon nanotubes enhances conductivity and stability, achieving 397 mAh g−1 at C ...
Arindam Mal   +7 more
wiley   +1 more source

Real-Time Cascaded State Estimation Framework on Lie Groups for Legged Robots Using Proprioception. [PDF]

open access: yesBiomimetics (Basel)
Liu B   +6 more
europepmc   +1 more source

Disorder Scattering Induced Large Room Temperature Nonlinear Anomalous Hall Effect in a Semiconductor CdGeAs2

open access: yesAdvanced Materials, EarlyView.
Bulk CdGeAs2, a well‐known nonlinear optical semiconductor, exhibits an exceptionally large room‐temperature nonlinear Hall effect (NLHE), achieving a record‐high nonlinear Hall responsivity of 2.2 × 10−3 m/V. This pronounced NLHE enables broadband frequency mixing up to the megahertz regime, establishing CdGeAs2 as a promising platform for next ...
Seng Huat Lee   +16 more
wiley   +1 more source

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