Results 201 to 210 of about 2,989,727 (250)
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Applied Physics Letters, 2022
A normally off hydrogen-terminated diamond (H-diamond) metal-oxide-semiconductor field effect transistor (MOSFET) is realized by using lanthanum oxide (La2O3) gate dielectric.
Jianing Su +9 more
semanticscholar +1 more source
A normally off hydrogen-terminated diamond (H-diamond) metal-oxide-semiconductor field effect transistor (MOSFET) is realized by using lanthanum oxide (La2O3) gate dielectric.
Jianing Su +9 more
semanticscholar +1 more source
IEEE Transactions on Electron Devices, 2021
In this article, the normally- OFF etching-free p-GaN stripe array gate AlGaN/GaN high-electron-mobility-transistors (PSAG-HEMTs) are designed and experimentally demonstrated through hydrogen plasma treatment.
Xing Wei +14 more
semanticscholar +1 more source
In this article, the normally- OFF etching-free p-GaN stripe array gate AlGaN/GaN high-electron-mobility-transistors (PSAG-HEMTs) are designed and experimentally demonstrated through hydrogen plasma treatment.
Xing Wei +14 more
semanticscholar +1 more source
Normally-off hydrogen-terminated diamond field effect transistor with yttrium gate
Carbon, 2021The normally-off Yttrium (Y) gate hydrogen-terminated (H-terminated) diamond field effect transistor (FET) with 5 nm Al2O3 dielectric layer has been successfully fabricated and evaluated in this work.
Minghui Zhang +9 more
semanticscholar +1 more source
An 8-nm-thick Sn-doped polycrystalline β-Ga2O3 MOSFET with a “normally off” operation
Applied Physics Letters, 2021Monoclinic gallium oxide (β-Ga2O3) has attracted the interest of the scientific community due to its application in power electronics. Power electronics that need to handle a high voltage often uses a “normally off” device with a positive threshold ...
Youngbin Yoon +4 more
semanticscholar +1 more source
, 2021
A C–Si bonded SiO2/diamond interface is formed under a SiO2 mask during the selective diamond growth at a high temperature in a H2 atmosphere including methane (5%).
T. Bi +7 more
semanticscholar +1 more source
A C–Si bonded SiO2/diamond interface is formed under a SiO2 mask during the selective diamond growth at a high temperature in a H2 atmosphere including methane (5%).
T. Bi +7 more
semanticscholar +1 more source
Heavy-Ion Testing Method and Results of Normally OFF GaN-Based High-Electron-Mobility Transistor
IEEE Transactions on Nuclear Science, 2021Gallium nitride (GaN) power switches are promising devices for power conversion applications because this new technology enables the design of power converters with higher efficiency and reduced size than those achievable with conventional silicon ...
J. Sauveplane +8 more
semanticscholar +1 more source
Normally-off polycrystalline C H diamond MISFETs with MgF2 gate insulator and passivation
Diamond and related materials, 2021We report a normally-off C H diamond metal-insulator-semiconductor field effect transistor (MISFET) using a 15-nm-thick thermally evaporated MgF2 film as both the gate dielectric and the passivation layer.
He Qi +8 more
semanticscholar +1 more source
IEEE Electron Device Letters, 2022
Hot electrons with high kinetic energy could be generated in the channel of GaN high-electron-mobility transistors (HEMTs) during hard switching operation.
Hang Liao +9 more
semanticscholar +1 more source
Hot electrons with high kinetic energy could be generated in the channel of GaN high-electron-mobility transistors (HEMTs) during hard switching operation.
Hang Liao +9 more
semanticscholar +1 more source
, 2021
The article presents the results of development of selective etching of p-GaN over Al0.25Ga0.75N in Cl2/Ar/O2 ICP plasma for fabrication of normally-off p-GaN gate GaN HEMTs using a laser reflectometry system for precise control of the etched material ...
A. Taube +7 more
semanticscholar +1 more source
The article presents the results of development of selective etching of p-GaN over Al0.25Ga0.75N in Cl2/Ar/O2 ICP plasma for fabrication of normally-off p-GaN gate GaN HEMTs using a laser reflectometry system for precise control of the etched material ...
A. Taube +7 more
semanticscholar +1 more source
650-V Normally-OFF GaN/SiC Cascode Device for Power Switching Applications
IEEE transactions on industrial electronics (1982. Print), 2022A 650-V/84-mΩ normally-off GaN/SiC cascode device is demonstrated with systematic static and dynamic characterizations. The cascode device features a low-voltage enhancement-mode (E-mode) gallium nitride (GaN) high electron mobility transistor (HEMT) to ...
Kailun Zhong +5 more
semanticscholar +1 more source