Results 211 to 220 of about 3,063,705 (286)

Normally-OFF AlGaN/GaN MIS-HEMTs With Low RON and Vth Hysteresis by Functioning In-situ SiNx in Regrowth Process

IEEE Electron Device Letters, 2022
Normally-off AlGaN/GaN MIS-HEMTs with a high threshold voltage ( $\text{V}_{\text {th}}$ ) more than 2.5 V and a low on- resistance of $5.5\Omega \cdot $ mm have been achieved by an improved regrowth technique with in-situ SiNx passivation.
Jiaqi He, Qing Wang, Guangnan Zhou, Wenmao Li, Yang Jiang, Zepeng Qiao, Chuying Tang, Gang Li, Hongyu Yu   +8 more
semanticscholar   +1 more source

High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate

IEEE Transactions on Electron Devices, 2022
A normally- OFF AlGaN/GaN high-electron-mobility transistor (HEMT) with p-GaN gate was fabricated on free-standing GaN substrate. The self-terminated etching technology was achieved by combining with AlN stop layer and SF6-based etching gas.
Hsiang-Chun Wang, Taofei Pu, Xiaobo Li, Chia-Hao Liu, Junye Wu, Jiaying Yang, Ziyue Zhang, Youming Lu, Qi Wang, Lijun Song, H. Chiu, J. Ao, Xinke Liu   +12 more
semanticscholar   +1 more source

Over 1200 V Normally-OFF p-NiO Gated AlGaN/GaN HEMTs on Si With a Small Threshold Voltage Shift

IEEE Electron Device Letters, 2022
In this letter, we demonstrated a normally-off AlGaN/GaN HEMT using p-NiO as a gate stack combined with a recess structure. The fabricated HEMT exhibits a positive threshold voltage of 1.73 V, a saturation output current of 524 mA/mm, a small ...
Hui Guo, H. Gong, Pengfei Shao, Xinxin Yu, Jin Wang, Rui Wang, Le Yu, Jiandong Ye, Dunjun Chen, Hai Lu, Rong Zhang, Youdou Zheng   +11 more
semanticscholar   +1 more source

Normally-off β-Ga2O3 Power Heterojunction Field-Effect-Transistor Realized by p-NiO and Recessed-Gate

International Symposium on Power Semiconductor Devices and IC's, 2022
In this work, we designed and fabricated a p-NiO gate heterojunction field effect transistor (HJFET) with gate-recessed architecture based on β-Ga2O3. The gate recess process was utilized, and wet chemical etching and annealing process were performed to ...
Xuanze Zhou, Qi Liu, Weibing Hao, Guangwei Xu, S. Long   +4 more
semanticscholar   +1 more source

Investigation of Thermally Induced Threshold Voltage Shift in Normally-OFF p-GaN Gate HEMTs

IEEE Transactions on Electron Devices, 2022
In this article, the thermally induced threshold voltage ( ${V}_{\text{TH}}$ ) shift was investigated on two types of normally- OFF p-GaN gate high-electron-mobility transistors (HEMTs), featuring either an Ohmic-type or a Schottky-type gate. A positive
Huan-Hsiung Wang, Yan Lin, Junsong Jiang, Dan Dong, Fengwei Ji, Meng Zhang, Ming Jiang, Wei Gan, Hui Li, Maojun Wang, Jin Wei, Baikui Li, Xi Tang, Cungang Hu, Wenping Cao   +14 more
semanticscholar   +1 more source

High Mobility Normally-OFF Hydrogenated Diamond Field Effect Transistors With BaF₂ Gate Insulator Formed by Electron Beam Evaporator

IEEE Transactions on Electron Devices, 2022
High performance normally-OFF hydrogenated diamond (C-H diamond) metal–insulator–semiconductor (MIS) field-effect transistors (FETs) have been achieved with Al/BaF2 gate materials.
Qi He, Kai Su, Jinfeng Zhang, Z. Ren, Yufei Xing, Jincheng Zhang, Yingyi Lei, Yue Hao   +7 more
semanticscholar   +1 more source

Current transport dynamics and stability characteristics of the NiO x based gate structure for normally-off GaN HEMTs

Journal of Physics D: Applied Physics, 2022
The application of p-type oxide typified with NiO x as cap layer in AlGaN/GaN high electron mobility transistor for normally-off operation has specific benefits, including etching free fabrication process, high hole density and elimination of Mg dopants ...
Yonghao Du, Weizong Xu, H. Gong, Jiandong Ye, F. Zhou, F. Ren, Dong Zhou, Dunjun Chen, Rong Zhang, Youdou Zheng, Hai Lu   +10 more
semanticscholar   +1 more source

Normally-OFF p-GaN Gate Double-Channel HEMT With Suppressed Hot-Electron-Induced Dynamic ON-Resistance Degradation

IEEE Electron Device Letters, 2022
Hot electrons with high kinetic energy could be generated in the channel of GaN high-electron-mobility transistors (HEMTs) during hard switching operation.
Hang Liao, Zheyang Zheng, Tao Chen, Li Zhang, Yan Cheng, S. Feng, Y. H. Ng, Long Chen, Li Yuan, K. J. Chen   +9 more
semanticscholar   +1 more source

Electrical characteristics of normally off hydrogen-terminated diamond field effect transistors with lanthanum oxide gate dielectric

Applied Physics Letters, 2022
A normally off hydrogen-terminated diamond (H-diamond) metal-oxide-semiconductor field effect transistor (MOSFET) is realized by using lanthanum oxide (La2O3) gate dielectric.
Jianing Su, Genqiang Chen, Wen Wang, Han Shi, Shi He, X. Lv, Yanfeng Wang, Minghui Zhang, Ruozheng Wang, Hongxing Wang   +9 more
semanticscholar   +1 more source

Leakage current reduction of normally off hydrogen-terminated diamond field effect transistor utilizing dual-barrier Schottky gate

Journal of Applied Physics, 2022
Normally Off diamond field-effect transistor (FET) is demanded for energy saving and safety for practical application. Metal/diamond Schottky junction serving as the gate is a simple and effective approach to deplete holes under the gate, whereas low ...
Genqiang Chen, Wei Wang, Shi He, Juan Wang, Shumiao Zhang, Minghui Zhang, Hongxing Wang   +6 more
semanticscholar   +1 more source