Results 231 to 240 of about 3,063,705 (286)

C–Si bonded two-dimensional hole gas diamond MOSFET with normally-off operation and wide temperature range stability

, 2021
A C–Si bonded SiO2/diamond interface is formed under a SiO2 mask during the selective diamond growth at a high temperature in a H2 atmosphere including methane (5%).
T. Bi, Yuhao Chang, Wenxi Fei, M. Iwataki, A. Morishita, Yu Fu, Naoya Niikura, H. Kawarada   +7 more
semanticscholar   +1 more source

RRAM-based FPGA for "normally off, instantly on" applications

Proceedings of the 2012 IEEE/ACM International Symposium on Nanoscale Architectures, 2012
"Normally off, instantly on" applications are becoming common in our environment. They range from healthcare to video surveillance. As the number of applications and their associated performance requirements grow rapidly, more and more powerful, flexible and power efficient computing units are necessary.
Turkyilmaz, Ogun, Onkaraiah, Santhosh, Reyboz, Marina, Clermidy, Fabien, Hraziia, H., Anghel, Costin, Portal, Jean-Michel, Bocquet, Marc   +7 more
openaire   +1 more source

GaN HEMT devices: Experimental results on normally-on, normally-off and cascode configuration

IECON 2013 - 39th Annual Conference of the IEEE Industrial Electronics Society, 2013
Power electronics systems play key function in power management and motion control: power consumption and volume reduction are strongly required in new applications oriented to protect environment. Moreover, a switching frequency increase is demanded for microwave and power switching applications, thus reducing passive component and converter volume ...
Sorrentino G, Melito M., Patti A, Parrino G, Raciti A   +4 more
openaire   +2 more sources

Normally-Off Oxidized Si-Terminated (111) Diamond MOSFETs via ALD-Al2O3 Gate Insulator With Drain Current Density Over 300 mA/mm

IEEE Transactions on Electron Devices, 2022
A novel method to fabricate the oxidized silicon-terminated (C–Si–O) diamond metal-oxide-semi- conductor field-effect transistors (MOSFETs) by replacing the retained SiO2 masks with an atomic layer deposition (ALD)-Al2O3 film as the main gate insulator ...
Yu Fu, Yuhao Chang, Xiaohua Zhu, Ruimin Xu, Yuehang Xu, H. Kawarada   +5 more
semanticscholar   +1 more source

Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT With AlGaN Cap-Layer

IEEE Electron Device Letters, 2021
In this work, the dual junction-high-electron-mobility-transistor (DJ-HEMT) was investigated. The thin AlGaN was grown between the p-GaN gate and gate metal.
Chia-Hao Liu, H. Chiu, Hsiang-Chun Wang, H. Kao, Chong-Rong Huang   +4 more
semanticscholar   +1 more source

Spin-RAM for Normally-Off Computer

2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding, 2011
Spin-RAM technologies for operation speed faster than 30 ns, memory capacity larger than 1 Gbits and practically infinite read/write endurance have been developed by using magnetic tunnel junctions with perpendicular magnetization layers. Combination of Spin-RAM and power-gating technology will enable ultra low power computer called Normally-Off ...
K. Ando, K. Yakushiji, H. Kubota, A. Fukushima, S. Yuasa, T. Kai, T. Kishi, N. Shimomura, H. Aikawa, M. Yoshikawa, T. Nagase, K. Nishiyama, E. Kitagawa, T. Daibou, M. Amano, S. Takahashi, M. Nakayama, S. Ikegawa, M. Nagamine, J. Ozeki, D. Watanabe, H. Yoda, T. Nozaki, Y. Suzuki, M. Oogane, S. Mizukami, Y. Ando, T. Miyazaki, Y. Nakatani   +28 more
openaire   +1 more source

1.2 kV/25 A Normally off P-N Junction/AlGaN/GaN HEMTs With Nanosecond Switching Characteristics and Robust Overvoltage Capability

IEEE transactions on power electronics, 2021
With a reverse p-n junction in the gate stack design, this work demonstrates a 1.2 kV/25 A normally off p-n junction/AlGaN/GaN high-electron mobility transistor (PNJ-HEMT).
F. Zhou, Weizong Xu, F. Ren, Yuanyang Xia, Leke Wu, T. Zhu, Dunjun Chen, Rong Zhang, Youdou Zheng, Hai Lu   +9 more
semanticscholar   +1 more source

Threshold voltages of normally off MESFET's

IEEE Transactions on Electron Devices, 1972
The threshold voltage of "normally off" Si-MESFET's for simple dc-coupled circuits is defined and computed with a two-dimensional device model, taking into account carrier velocity saturation and diffusion. The influence of the main parameters, gate length, conducting-layer thickness, and doping is investigated outside the range of Shockley's equations.
W. Jutzi, M. Reiser
openaire   +1 more source

Normally-Off Mesfet Analogue Circuits

16th European Microwave Conference, 1986, 1986
A very small (0.04 mm2) monolithic DC to 2GHz, input/output matched, amplifier using enhancement mode GaAs MESFET's has been realized, to demonstrate the analog circuits capability of this type of transistor. The gain of the amplifier is 12dB, its noise factor is 2dB.
V. Pauker, P. Dautriche, A. Giakoumis, A. Kazeminejad   +3 more
openaire   +1 more source

Enhancement-mode normally-off β-Ga2O3:Si metal-semiconductor field-effect deep-ultraviolet phototransistor

Semiconductor Science and Technology, 2021
In this work, a solar-blind ultraviolet (UV) photodetector based on a three-terminal enhancement-mode (E-mode) Si-doped β-Ga2O3 (β-Ga2O3:Si) metal-semiconductor field-effect transistor structure is demonstrated, whose threshold voltage (V th) and ...
Zeng Liu, Maolin Zhang, Lili Yang, Shan Li, Shaohui Zhang, Kaikai Li, Peigang Li, Yufeng Guo, Weihua Tang   +8 more
semanticscholar   +1 more source