Results 241 to 250 of about 3,063,705 (286)

Normally-off computing for IoT systems

2015 International SoC Design Conference (ISOCC), 2015
It is important to thoroughly reduce energy consumption for IoT systems. Normally-Off is a way of computing which aggressively powers off components of computer systems when they need not to operate. Recently, new non-volatile memories (NVMs) have appeared. We introduce normally-off computing using these NVMs.
Takashi Nakada, Toru Shimizu, Hiroshi Nakamura   +2 more
openaire   +1 more source

Normally-off technology at Philips microwave

III-Vs Review, 1991
Abstract Philips Microwave GaAs Foundry and ASIC Design Centre at Limeil, near Paris, has a calibrated 0.7μm ERO7AD process which is particularly well suited to low dc power analogue and digital ICs. In a clear demonstration of the capability of the process, new structures have been used to improve the performance of a family of low noise amplifiers.
D. Meignant, P. Philippe, N. Caglio
openaire   +1 more source

Investigation of the dynamic on-state resistance of 600V normally-off and normally-on GaN HEMTs

2015 IEEE Energy Conversion Congress and Exposition (ECCE), 2015
In this paper, current collapse phenomena and thermal effects in normally-off and normally-on GaN HEMTs are investigated. The experimental results show that a high-off-state voltage and high-switched drain current at high junction temperature cause an increase of the on-state resistance ${{\rm{R}}_{{\rm{DSON}}}}$ .
Badawi, Nasser, Hilt, Oliver, Behat-Treidel, Eldad, Böcker, Jan, Würfl, Joachim, Dieckerhoff, Sibylle   +5 more
openaire   +1 more source

Implementation of normally-off function for TOPPERS/ASP kernel

2013 IEEE 2nd Global Conference on Consumer Electronics (GCCE), 2013
This paper proposes a normally-off embedded system. The idea behind this system is it turns the power off when the system is idle. Volatile devices, however, cannot maintain their own internal information when they are powered off. So, we use non-volatile RAM (NVRAM) to save the internal information.
Yuma Arakawa, Takeshi Nagasaki, Masashi Toda, Keiji Hirata 0001, Hitoshi Matsubara   +4 more
openaire   +1 more source

Technologies for normally-off GaN HEMTs

2020
This chapter reviews the current technologies for normally-off GaN-based HEMTs. First, the HEMT "cascode" approach is briefly described, highlighting advantages and limitation of this design.Then, after illustrating the recessed gate HEMT and the fluorinate gate approach, the focus is put on the recessed gate hybrid metal insulator semiconductor high ...
Giuseppe Greco, Patrick Fiorenza, Ferdinando Iucolano, Fabrizio Roccaforte   +3 more
openaire   +1 more source

Cone positive off-response in normal and dystrophic cats

Documenta Ophthalmologica, 1998
Light-adapted cone ERG in response to white stimuli with long duration (200 ms) was studied in seven normal cats and six cats with early to moderate, inherited retinal dystrophy. The stimuli typically elicited an ERG consisting of an a- and b-wave in response to light onset, whereas light-offset was followed by a cornea-positive d-wave and subsequent ...
B, Ekesten, K, Narfström
openaire   +2 more sources

Technologies for Realizing Normally-Off Computing

2017
Normally-off computing relies on device technologies, architectural and activity management technologies. To realize normally-off computing systems, details of each technology should be studied. Device technologies provide component that has as small BET as possible by minimizing energy overhead. Architectural technologies combined several devices that
Takashi Nakada, Shinobu Fujita, Masanori Hayashikoshi, Yoshikazu Fujimori, Hiroshi Nakamura   +4 more
openaire   +1 more source

Normally-Off- $\beta$ -Ga2O3 Power MOSFET With Ferroelectric Charge Storage Gate Stack Structure

IEEE Electron Device Letters, 2020
In this work, we have demonstrated normally-off $\beta {-}\text {Ga}_{{2}}\text {O}_{{3}}$ metal-oxide-semiconductor field-effect transistor (MOSFET) with the ferroelectric charge storage gate stack structure. Saturation currents of 18.3 and 16.0 mA/mm
Zhaoqing Feng, Q. Feng, Hong Zhuo, Jincheng Zhang, Y. Hao, Xusheng Tian, Zhe Li, Zhuangzhuang Hu, Yanni Zhang, X. Kang, Jing Ning, Yachao Zhang, Chunfu Zhang   +12 more
semanticscholar   +1 more source

Nanofabrication of normally-off GaN vertical nanowire MESFETs

Nanotechnology, 2019
Abstract Gallium nitride (GaN) all-around (wrap) gate vertical nanowire (V-NW) field-effect transistors (FETs) are favorable for enhanced electrostatic control of the gate and selectivity for normally on/off operation. In this work, GaN V-NW FETs with a Schottky barrier gate (V-NW MESFETs), were fabricated for the
G Doundoulakis, A Adikimenakis, A Stavrinidis, K Tsagaraki, M Androulidaki, F Iacovella, G Deligeorgis, G Konstantinidis, A Georgakilas   +8 more
openaire   +2 more sources

Single and multi-fin normally-off Ga2O3 vertical transistors with a breakdown voltage over 2.6 kV

International Electron Devices Meeting, 2019
We demonstrate record-high performance in normally-off single and multi-fin b-Ga2O3 vertical power transistors. The effective channel mobility is significantly improved up to ~130 cm2/V•s with a post-deposition annealing process. With a fin-channel width
Wenshen Li, K. Nomoto, Zongyang Hu, Tohru Nakamura, D. Jena, H. Xing   +5 more
semanticscholar   +1 more source