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The Journal of Physical Chemistry Letters
The development of monolithic integrated energy-efficient complementary circuits is crucial for the large-scale application of wide bandgap semiconductor-based high-frequency and high-power field-effect transistors (FETs). However, the inferior performance of p-channel FETs attributed to low hole density and mobility presents a substantial challenge ...
Wenchao Zhang +10 more
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The development of monolithic integrated energy-efficient complementary circuits is crucial for the large-scale application of wide bandgap semiconductor-based high-frequency and high-power field-effect transistors (FETs). However, the inferior performance of p-channel FETs attributed to low hole density and mobility presents a substantial challenge ...
Wenchao Zhang +10 more
openaire +2 more sources
Journal of Physics E: Scientific Instruments, 1968
An apparatus for the measurement of the normal spectral emissivity and the angular dependence of thermal radiation of electric conducting solid materials is described. The method of measurement is the direct comparison of radiation from the material and from a black body by means of a rotating mirror and a prism monochromator. The radiating surface and
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An apparatus for the measurement of the normal spectral emissivity and the angular dependence of thermal radiation of electric conducting solid materials is described. The method of measurement is the direct comparison of radiation from the material and from a black body by means of a rotating mirror and a prism monochromator. The radiating surface and
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Normally-Off Hydrogen-Terminated Diamond Field Effect Transistor With Yttrium Gate
Carbon, 2021Hong-Xing Wang, Shuwei Fan
exaly
Optical Effect in Normally-Off GaAs MESFET
physica status solidi (a), 1985R. Gulati +5 more
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Normally-Off Polycrystalline CH Diamond MISFETs With MgF2 Gate Insulator and Passivation
Diamond and Related Materials, 2021Jincheng Zhang, Zeyang Ren, Kai Su
exaly
Classes of Normally and Nearly Normally Torsion-Free Monomial Ideals
Communications in Algebra, 2022Ayesha Asloob Qureshi +1 more
exaly
Design and Fabrication of Normally-on and Normally-off Ultrathin AlN-based Transistors
2023 Seminar on Microelectronics, Dielectrics and Plasmas (MDP), 2023Olga B. Chukanova +3 more
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Review of Technology for Normally-Off HEMTs With p-GaN Gate
Materials Science in Semiconductor Processing, 2018Fabrizio Roccaforte +2 more
exaly