Results 1 to 10 of about 25,827,177 (224)

Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al₂O₃/AlN Composite Gate Insulator

Membranes, 2021
A metal–insulator–semiconductor p-type GaN gate high-electron-mobility transistor (MIS-HEMT) with an Al2O3/AlN gate insulator layer deposited through atomic layer deposition was investigated.
Hsien-Chin Chiu, Chia-Hao Liu, Chong-Rong Huang, Chi-Chuan Chiu, Hsiang-Chun Wang, Hsuan-Ling Kao, Shinn-Yn Lin, Feng-Tso Chien   +7 more
doaj   +2 more sources

Low Gate Lag Normally-Off p-GaN/AlGaN/GaN High Electron Mobility Transistor with Zirconium Gate Metal

Crystals, 2020
The impact of gate metal on the leakage current and breakdown voltage of normally-off p-GaN gate high-electron-mobility-transistor (HEMT) with nickel (Ni) and zirconium (Zr) metals were studied and investigated.
Chia-Hao Liu, Hsien-Chin Chiu, Chong-Rong Huang, Kuo-Jen Chang, Chih-Tien Chen, Kuang-Po Hsueh   +5 more
doaj   +2 more sources

Optimization of enhancement-mode MIS-GaN HEMT with dual channel for simple process using TCAD simulation [PDF]

Scientific Reports
A metal-insulator-semiconductor (MIS) GaN high electron mobility transistor (HEMT) utilizing a dual-channel structure is demonstrated for enhancement-mode (E-mode) operation using the Synopsys Sentaurus™ technology computer-aided design (TCAD) simulator.
Kang Hee Lee, Yeonsil Yang, Junseok Heo, Jang Hyun Kim   +3 more
doaj   +2 more sources

The ESD Robustness and Protection Technology of P-GaN HEMT [PDF]

Micromachines
This work first analyzes the failure behaviors of P-GaN HEMTs with different gate structures (Schottky gate vs. Ohmic gate) under both forward and reverse ESD stresses.
Yijun Shi, Yantao Chen, Liang He, Xinghuan Chen, Yuan Chen, Guoguang Lu   +5 more
doaj   +2 more sources

Breakdown enhancement and hot electrons mitigation for p-GaN gate HEMTs by electric field modulation

Results in Physics, 2023
In this article, an enhancement mode (E-mode) p-GaN gate AlGaN/GaN high electron mobility transistor (HEMT) with the novel strain technology (NST) has been proposed.
Jingyu Shen, Liang Jing, Ping Li, Hao Wu, Shengdong Hu   +4 more
doaj   +1 more source

Enhancement of Breakdown Voltage in p-GaN Gate AlGaN/GaN HEMTs With a Stepped Hybrid GaN/AlN Buffer Layer

IEEE Journal of the Electron Devices Society, 2022
A novel p-GaN gate AlGaN/GaN high electron mobility transistor (HEMT) structure with a stepped hybrid GaN/AlN buffer layer (S-HEMT) is proposed and simulated by the Sentaurus TCAD in this paper.
Yuan Wang, Shengdong Hu, Jingwei Guo, Hao Wu, Tao Liu, Jie Jiang   +5 more
doaj   +1 more source

Reliability, Applications and Challenges of GaN HEMT Technology for Modern Power Devices: A Review

Crystals, 2022
A new generation of high-efficiency power devices is being developed using wide bandgap (WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to silicon. The recent interest in GaN has been piqued by its excellent material
Naeemul Islam, Mohamed Fauzi Packeer Mohamed, Muhammad Firdaus Akbar Jalaludin Khan, Shaili Falina, Hiroshi Kawarada, Mohd Syamsul   +5 more
doaj   +1 more source

Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications

IEEE Journal of the Electron Devices Society, 2021
In this work, low voltage RF power capability on AlGaN/GaN and InAlN/GaN HEMTs is analyzed from the perspective of DC and pulse characteristics, for terminal applications whose operating voltage is usually in the range of 3 to 15 V. Device fabrication is
Yuwei Zhou, Jiejie Zhu, Minhan Mi, Meng Zhang, Pengfei Wang, Yutong Han, Sheng Wu, Jielong Liu, Qing Zhu, Yilin Chen, Bin Hou, Xiaohua Ma, Yue Hao   +12 more
doaj   +1 more source

Investigation on the Thermal Characteristics of Enhancement-Mode p-GaN HEMT Device on Si Substrate Using Thermoreflectance Microscopy

Micromachines, 2022
In this paper, thermoreflectance microscopy was used to measure the high spatial resolution temperature distribution of the p-GaN HEMT under high power density. The maximum temperature along the GaN channel was located at the drain-side gate edge region.
Hongyue Wang, Chao Yuan, Yajie Xin, Yijun Shi, Yaozong Zhong, Yun Huang, Guoguang Lu   +6 more
doaj   +1 more source

Study of AlGaN/GaN Vertical Superjunction HEMT for Improvement of Breakdown Voltage and Specific On-Resistance

IEEE Access, 2021
A GaN-based vertical superjunction high electron mobility transistor (SJ HEMT) with a composite structure (CS-SJ HEMT) is proposed and analyzed by Silvaco TCAD to improve the breakdown voltage and specific on-resistance (RonA).
Miao Zhang, Zhiyou Guo, Yong Huang, Yuan Li, Jiancheng Ma, Xiaoyu Xia, Xiuyang Tan, Fan Xia, Huiqing Sun   +8 more
doaj   +1 more source