Results 21 to 30 of about 25,827,177 (224)
The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs
IEEE Electron Device Letters, 2022 In this letter, we present an extensive analysis on the role of both switching frequency (ranging from 100 kHz to 1 MHz) and duty cycle (from 10% to 90%) on the time-dependent gate breakdown of high electron mobility transistors (HEMTs) with Schottky metal to p-GaN gate.
M. Millesimo +7 more
openaire +2 more sources
-GaN Gate Double-Channel GaN HEMT
, 2023 Electroluminescence (EL) of a Schottky-type p -GaN gate double-channel (DC-) GaN high-electron-mobility transistor (HEMT) was investigated to understand the mechanism of the carrier dynamics in the gate stack.
Tao Chen +15 more
core +1 more source
Micromachines, 2021 The influence of the repair process on the electrical properties of the normally off p-GaN high-electron-mobility transistor (HEMT) is studied in detail in this paper.
Di Niu +10 more
doaj +1 more source
High Dynamic Stability in Enhancement-Mode Active-Passivation p-GaN Gate HEMT
, 2023 The dynamic stability of E-mode active-passivation p-GaN gate HEMT (AP- HEMT) is investigated, including dynamic VTH shift, dynamic RON degradation, and dynamic leakage current.
Zheng, Zheyang +11 more
core +1 more source
Improved Gate Reliability of p-GaN Gate HEMTs by Gate Doping Engineering
, 2021 We present a novel p-GaN gate HEMT structure with reduced hole concentration near the Schottky interface by doping engineering in MOCVD, which aims at lowering the electric field across the gate. By employing an additional unintentionally doped GaN layer, the gate leakage current is suppressed and the gate breakdown voltage is boosted from 10.6 to 14.6
Zhou, Guangnan +6 more
openaire +2 more sources
Micromachines, 2021 Normally-off p-gallium nitride (GaN) high electron mobility transistor (HEMT) devices with multi-finger layout were successfully fabricated by use of a self-terminating etching technique with Cl2/BCl3/SF6-mixed gas plasma. This etching technique features
Ya-Chun Chang +4 more
doaj +1 more source
Gate-Bias Induced RON Instability in p-GaN Power HEMTs
IEEE Electron Device Letters, 2023 In this letter, we investigate the on-resistance ( RON ) instability in p-GaN power HEMTs induced by a positive or negative gate bias ( VGB ), following the application of a quasi-static initialization voltage ( VGP ) of opposite sign. The transient behavior of this instability was characterized at different temperatures in the 90–135 °C range.
Chini, Alessandro +7 more
openaire +2 more sources
A New GaN-Based Device, P-Cascode GaN HEMT, and Its Synchronous Buck Converter Circuit Realization
Energies, 2021 This paper attempts to disclose a new GaN-based device, called the P-Cascode GaN HEMT, which uses only a single gate driver to control both the D-mode GaN and PMOS transistors.
Chih-Chiang Wu +5 more
doaj +1 more source
IEEE Journal of the Electron Devices Society, 2018 In this paper, a novel normally off p-gallium nitride (GaN) gate high electron-mobility transistor (HEMT) with composite AlN/Al0.17Ga0.83N/Al0.3Ga0.7N barrier layers is proposed.
Hsien-Chin Chiu +6 more
doaj +1 more source
AIP Advances, 2021 This work presents the temperature-dependent characteristics of the thin-barrier Al0.45Ga0.55N/GaN high electron mobility transistor (HEMT), p-type CuO gate HEMT, and high-k HfO2 metal–insulator–semiconductor HEMT (MIS-HEMT).
Yaopeng Zhao +7 more
doaj +1 more source