Results 21 to 30 of about 2,431 (179)
Breakdown enhancement and hot electrons mitigation for p-GaN gate HEMTs by electric field modulation
Results in Physics, 2023 In this article, an enhancement mode (E-mode) p-GaN gate AlGaN/GaN high electron mobility transistor (HEMT) with the novel strain technology (NST) has been proposed.
Jingyu Shen +4 more
doaj +1 more source
-GaN Gate Double-Channel GaN HEMT [PDF]
, 2023 Electroluminescence (EL) of a Schottky-type p -GaN gate double-channel (DC-) GaN high-electron-mobility transistor (HEMT) was investigated to understand the mechanism of the carrier dynamics in the gate stack.
Tao Chen +15 more
core +1 more source
IEEE Journal of the Electron Devices Society, 2022 A novel p-GaN gate AlGaN/GaN high electron mobility transistor (HEMT) structure with a stepped hybrid GaN/AlN buffer layer (S-HEMT) is proposed and simulated by the Sentaurus TCAD in this paper.
Yuan Wang +5 more
doaj +1 more source
, 2021 In this work, the impacts of OFF-state gate bias (VGS,OFF) on the dynamic on-resistance (RON) are investigated in the commercial Schottky-type p-GaN gate high-electron-mobility transistor (HEMT).
Xinran Huang +11 more
core +1 more source
Reliability of p-GaN Gate HEMTs in Reverse Conduction
IEEE Transactions on Electron Devices, 2021 Synchronous buck converter comprises a low side (LS) and a high side (HS) switch, where the HS switch works in the first quadrant (forward conduction) whereas the LS switch works in the third quadrant (reverse conduction). However, the reliability of the p-GaN gate high electron mobility transistor (HEMT) in reverse conduction is unclear. In this work,
Cingu, Deepthi +9 more
openaire +3 more sources
High Dynamic Stability in Enhancement-Mode Active-Passivation p-GaN Gate HEMT [PDF]
, 2023 The dynamic stability of E-mode active-passivation p-GaN gate HEMT (AP- HEMT) is investigated, including dynamic VTH shift, dynamic RON degradation, and dynamic leakage current.
Zheng, Zheyang +11 more
core +1 more source
Reliability, Applications and Challenges of GaN HEMT Technology for Modern Power Devices: A Review
Crystals, 2022 A new generation of high-efficiency power devices is being developed using wide bandgap (WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to silicon. The recent interest in GaN has been piqued by its excellent material
Naeemul Islam +5 more
doaj +1 more source
p-GaN Selective Passivation via H Ion Implantation to Obtain a p-GaN Gate Normally off AlGaN/GaN HEMT [PDF]
, 2023 A dependable and robust technique for nanomachining is ion implantation. In this work, hydrogen (H) ion implantation was used, for the first time, to passivate p-GaN, except for the gate area, in order to create a normally off p-GaN/AlGaN/GaN high ...
Zhongkai Du +8 more
core +1 more source
Characterization in Schottky-Type p-GaN Gate Power HEMT [PDF]
, 2021 A multi-functional bootstrap voltage clamping circuit is proposed for characterizing the drain-bias-induced dynamic VTH, in which the GaN HEMT serves as the key bootstrapping device.
Zheng, Zheyang +11 more
core +1 more source
Piezotronic effect in a normally off p-GaN/AlGaN/GaN HEMT toward highly sensitive pressure sensor [PDF]
, 2021 We report the effect of stress or strain on the electronic characteristics of a normally off AlGaN/GaN high electron mobility transistor (HEMT) and demonstrate its role as a highly sensitive pressure sensor.
Hong-Quan Nguyen +19 more
core +1 more source