Results 31 to 40 of about 25,827,177 (224)

Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation

Nanomaterials, 2022
This paper studies the synergistic effect of total ionizing dose (TID) and displacement damage dose (DDD) in enhancement-mode GaN high electron mobility transistor (HEMT) based on the p-GaN gate and cascode structure using neutron and 60Co gamma-ray ...
Rui Chen, Yanan Liang, Jianwei Han, Qihong Lu, Qian Chen, Ziyu Wang, Hao Wang, Xuan Wang, Runjie Yuan   +8 more
doaj   +1 more source

p-GaN Selective Passivation via H Ion Implantation to Obtain a p-GaN Gate Normally off AlGaN/GaN HEMT

, 2023
A dependable and robust technique for nanomachining is ion implantation. In this work, hydrogen (H) ion implantation was used, for the first time, to passivate p-GaN, except for the gate area, in order to create a normally off p-GaN/AlGaN/GaN high ...
Zhongkai Du, Bingliang Zhang, Xu Yuan, Baoshun Zhang, Tao Ju, Xinping Zhang, Xiaoyu Ding, Zhongming Zeng, Guohao Yu   +8 more
core   +1 more source

Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization

Micromachines, 2023
The bias temperature instability (BTI) effect of p-GaN gate high-electron-mobility transistors (HEMTs) is a serious problem for reliability. To uncover the essential cause of this effect, in this paper, we precisely monitored the shifting process of the ...
Xiangdong Li, Meng Wang, Jincheng Zhang, Rui Gao, Hongyue Wang, Weitao Yang, Jiahui Yuan, Shuzhen You, Jingjing Chang, Zhihong Liu, Yue Hao   +10 more
doaj   +1 more source

Developing of normally-off p-GaN gate HEMT

Journal of Physics: Conference Series, 2019
Abstract In this paper, the high electron mobility transistor (HEMT) with p-GaN gate is developed. The article demonstrates development of normally-off p-GaN gate HEMT on heterostructure with AlN stop layer for p-GaN selective etching and formation of normally-on GaN HEMT on the same wafer.
O B Kukhtyaeva, V I Egorkin, V E Zemlyakov, V V Kapaev, A A Zaitsev, A F Tsatsulnikov, A E Nikolaev, A V Sakharov   +7 more
openaire   +1 more source

of p-GaN Gate HEMT

, 2021
In this work, the impacts of OFF-state gate bias (VGS,OFF) on the dynamic on-resistance (RON) are investigated in the commercial Schottky-type p-GaN gate high-electron-mobility transistor (HEMT).
Xinran Huang, Lingling Li, Junting Chen, Jiang, Zuoheng, Kevin J. Chen, Mengyuan Hua, Zuoheng Jiang, Chen, Kevin J., Huang, Xinran, Hua, Mengyuan, Li, Lingling, Chen, Junting   +11 more
core   +1 more source

Gate Current in p-GaN Gate HEMTs as a Channel Temperature Sensitive Parameter: A Comparative Study between Schottky- and Ohmic-Gate GaN HEMTs

Energies, 2021
In this work, a comparison between the gate-driving requirements of p-GaN HEMTs with gate contact of Schottky and Ohmic type is presented. Furthermore, the presence of a gate current of different magnitude is experimentally verified for both types of ...
Alessandro Borghese, Alessandro Di Costanzo, Michele Riccio, Luca Maresca, Giovanni Breglio, Andrea Irace   +5 more
doaj   +1 more source

AlN/GaN-based MOS-HEMT technology: processing and device results [PDF]

, 2011
Process development of AlN/GaN MOS-HEMTs is presented, along with issues and problems concerning the fabrication processes. The developed technology uses thermally grown Al₂O₃ as a gate dielectric and surface
Wasige, E., S. Taking, E. Wasige, D. MacFarlane, MacFarlane, D., Taking, S.   +5 more
core   +1 more source

Effect of X-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS Gates

Nanotechnology and Precision Engineering, 2020
Commercially available AlGaN/GaN high-electron-mobility transistors (HEMTs) are beginning to enter the public scene from a range of suppliers. Based on previous studies, commercial GaN-based electronics are expected to be tolerant to different types of ...
Yongle Qi, Denggui Wang, Jianjun Zhou, Kai Zhang, Yuechan Kong, Suzhen Wu, Tangsheng Chen   +6 more
doaj   +1 more source

Characterization of the novel ICeGaN 650V/ 8.5 A, 200 mΩ power device technology

Power Electronic Devices and Components, 2023
This work reports on the static and dynamic performance of the state-of-the-art 650 V ICeGaN™ (Integrated Circuit Enhancement GaN) power switch with an ON-state resistance Ron of 200 mΩ. Through the monolithic integration of a novel gate interface with a
K. Mukherjee, M. Arnold, J. Zhang, K. Ledins, M. Michalak, O. Fung, L. Efthymiou, Z. Ansari, G. Longobardi, F. Udrea   +9 more
doaj   +1 more source

E-mode p-n Junction/AlGaN/GaN HEMTs with Enhanced Gate Reliability

, 2020
in this work, we investigate the gate reliability of E-mode ${p-n}$ junction gate (PNJ) HEMT, which features an n GaN/p-GaN/AlGaN/GaN gate stack. Both electric-field and thermal-accelerated time-dependent gate breakdown (TDGB) tests were conducted on the
Wang, Chengcai, Yang, Song, Zhang, Li, Chen, Kevin J., Hua, Mengyuan   +4 more
core   +1 more source