Results 31 to 40 of about 2,431 (179)

A New GaN-Based Device, P-Cascode GaN HEMT, and Its Synchronous Buck Converter Circuit Realization

Energies, 2021
This paper attempts to disclose a new GaN-based device, called the P-Cascode GaN HEMT, which uses only a single gate driver to control both the D-mode GaN and PMOS transistors.
Chih-Chiang Wu, Ching-Yao Liu, Guo-Bin Wang, Yueh-Tsung Shieh, Wei-Hua Chieng, Edward Yi Chang   +5 more
doaj   +1 more source

High-Performance Normally Off p-GaN Gate HEMT With Composite AlN/Al_0.17Ga_0.83N/Al_0.3Ga_0.7N Barrier Layers Design

IEEE Journal of the Electron Devices Society, 2018
In this paper, a novel normally off p-gallium nitride (GaN) gate high electron-mobility transistor (HEMT) with composite AlN/Al0.17Ga0.83N/Al0.3Ga0.7N barrier layers is proposed.
Hsien-Chin Chiu, Yi-Sheng Chang, Bo-Hong Li, Hsiang-Chun Wang, Hsuan-Ling Kao, Chih-Wei Hu, Rong Xuan   +6 more
doaj   +1 more source

Temperature-dependent characteristics for the p-type CuO gate HEMT and high-k HfO2 MIS-HEMT on the Si substrates

AIP Advances, 2021
This work presents the temperature-dependent characteristics of the thin-barrier Al0.45Ga0.55N/GaN high electron mobility transistor (HEMT), p-type CuO gate HEMT, and high-k HfO2 metal–insulator–semiconductor HEMT (MIS-HEMT).
Yaopeng Zhao, Chong Wang, Xuefeng Zheng, Yunlong He, Xiaohua Ma, Kai Liu, Ang Li, Yue Hao   +7 more
doaj   +1 more source

Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation

Nanomaterials, 2022
This paper studies the synergistic effect of total ionizing dose (TID) and displacement damage dose (DDD) in enhancement-mode GaN high electron mobility transistor (HEMT) based on the p-GaN gate and cascode structure using neutron and 60Co gamma-ray ...
Rui Chen, Yanan Liang, Jianwei Han, Qihong Lu, Qian Chen, Ziyu Wang, Hao Wang, Xuan Wang, Runjie Yuan   +8 more
doaj   +1 more source

Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization

Micromachines, 2023
The bias temperature instability (BTI) effect of p-GaN gate high-electron-mobility transistors (HEMTs) is a serious problem for reliability. To uncover the essential cause of this effect, in this paper, we precisely monitored the shifting process of the ...
Xiangdong Li, Meng Wang, Jincheng Zhang, Rui Gao, Hongyue Wang, Weitao Yang, Jiahui Yuan, Shuzhen You, Jingjing Chang, Zhihong Liu, Yue Hao   +10 more
doaj   +1 more source

1 μm gate length, In_0.75Ga_0.25As channel, thin body n-MOSFET on InP substrate with transconductance of 737μS/μm [PDF]

, 2008
The first demonstration of implant-free, flatband-mode In_0.75Ga_0.25As channel n-MOSFETs is reported. These 1 μm gate length MOSFETs, fabricated on a structure with average mobility of 7720 cm<sup ...
Moran, D.A.J., Ignatova, O., Asenov, A., Passlack, M., Li, X., Thayne, I.G., Droopad, R., Zhou, H., Fejes, P., Thoms, S., Rajagopalan, K., Hill, R.J.W., Macintyre, D.   +12 more
core   +1 more source

Gate Current in p-GaN Gate HEMTs as a Channel Temperature Sensitive Parameter: A Comparative Study between Schottky- and Ohmic-Gate GaN HEMTs

Energies, 2021
In this work, a comparison between the gate-driving requirements of p-GaN HEMTs with gate contact of Schottky and Ohmic type is presented. Furthermore, the presence of a gate current of different magnitude is experimentally verified for both types of ...
Alessandro Borghese, Alessandro Di Costanzo, Michele Riccio, Luca Maresca, Giovanni Breglio, Andrea Irace   +5 more
doaj   +1 more source

E-mode p-n Junction/AlGaN/GaN HEMTs with Enhanced Gate Reliability [PDF]

, 2020
in this work, we investigate the gate reliability of E-mode ${p-n}$ junction gate (PNJ) HEMT, which features an n GaN/p-GaN/AlGaN/GaN gate stack. Both electric-field and thermal-accelerated time-dependent gate breakdown (TDGB) tests were conducted on the
Wang, Chengcai, Yang, Song, Zhang, Li, Chen, Kevin J., Hua, Mengyuan   +4 more
core   +1 more source

Developing of normally-off p-GaN gate HEMT

Journal of Physics: Conference Series, 2019
Abstract In this paper, the high electron mobility transistor (HEMT) with p-GaN gate is developed. The article demonstrates development of normally-off p-GaN gate HEMT on heterostructure with AlN stop layer for p-GaN selective etching and formation of normally-on GaN HEMT on the same wafer.
O B Kukhtyaeva, V I Egorkin, V E Zemlyakov, V V Kapaev, A A Zaitsev, A F Tsatsulnikov, A E Nikolaev, A V Sakharov   +7 more
openaire   +1 more source

Characterization of the novel ICeGaN 650V/ 8.5 A, 200 mΩ power device technology

Power Electronic Devices and Components, 2023
This work reports on the static and dynamic performance of the state-of-the-art 650 V ICeGaN™ (Integrated Circuit Enhancement GaN) power switch with an ON-state resistance Ron of 200 mΩ. Through the monolithic integration of a novel gate interface with a
K. Mukherjee, M. Arnold, J. Zhang, K. Ledins, M. Michalak, O. Fung, L. Efthymiou, Z. Ansari, G. Longobardi, F. Udrea   +9 more
doaj   +1 more source