Results 41 to 50 of about 2,431 (179)

-GaN Gate Radio-Frequency HEMT [PDF]

, 2023
We characterize and evaluate the RF linearity of an enhancement-mode {p}-GaN gate high-electron-mobility-Transistor (HEMT) on a 200-mm high-resistivity-silicon substrate.
Zheng, Zheyang, Ng, Yat Hon, Cheng, Yan, Kevin J. Chen, Zheyang Zheng, Yat Hon Ng, Chen, Kevin J., Yan Cheng   +7 more
core   +1 more source

Effect of X-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS Gates

Nanotechnology and Precision Engineering, 2020
Commercially available AlGaN/GaN high-electron-mobility transistors (HEMTs) are beginning to enter the public scene from a range of suppliers. Based on previous studies, commercial GaN-based electronics are expected to be tolerant to different types of ...
Yongle Qi, Denggui Wang, Jianjun Zhou, Kai Zhang, Yuechan Kong, Suzhen Wu, Tangsheng Chen   +6 more
doaj   +1 more source

Study of Self-Heating and High-Power Microwave Effects for Enhancement-Mode p-Gate GaN HEMT

Micromachines, 2022
The self-heating and high-power microwave (HPM) effects that can cause device heating are serious reliability issues for gallium nitride (GaN) high-electron-mobility transistors (HEMT), but the specific mechanisms are disparate.
Yingshuo Qin, Changchun Chai, Fuxing Li, Qishuai Liang, Han Wu, Yintang Yang   +5 more
doaj   +1 more source

The Evolution of Manufacturing Technology for GaN Electronic Devices

Micromachines, 2021
GaN has been widely used to develop devices for high-power and high-frequency applications owing to its higher breakdown voltage and high electron saturation velocity.
An-Chen Liu, Po-Tsung Tu, Catherine Langpoklakpam, Yu-Wen Huang, Ya-Ting Chang, An-Jye Tzou, Lung-Hsing Hsu, Chun-Hsiung Lin, Hao-Chung Kuo, Edward Yi Chang   +9 more
doaj   +1 more source

Novel TCAD oriented definition of the off-state breakdown voltage in Schottky-gate FETs: a 4H SiC MESFET case study [PDF]

, 2008
Physics-based breakdown voltage optimization in Schottky-barrier power RF and microwave field-effect transistors as well as in high-speed power-switching diodes is today an important topic in technology computer-aided design (TCAD).
Bonani, Fabrizio, Furno, M., Ghione, Giovanni, FURNO M   +3 more
core   +1 more source

Resonant driving scheme for p-doped gallium nitride high electron mobility transistor to reduce driving power loss

Energy Reports, 2023
In high-frequency power electronics applications, gallium nitride high electron mobility transistors (GaN HEMTs) can switch at frequencies of several megahertz.
Zhixuan Wang, Xiangdong Sun, Biying Ren, Zechi Chen   +3 more
doaj   +1 more source

An ultra low power MMIC amplifier using 50nm delta doped In0.52Al0.48As / In0.53Ga0.47As metamorphic HEMT [PDF]

, 2010
An ultra-low-power monolithic amplifier using 50-nm gate-length GaAs metamorphic high-electron-mobility transistor (MHEMT) has been designed and fabricated by a coplanar waveguide monolithic microwave integrated circuit ...
Lok, L.B., Chi-Jeon Hwang, Lai Bun Lok, Holland, Martin, Holland, M., Thayne, I.G., Hwang, C.J., Elgaid, Khaled, Elgaid, K., Hwang, C-J., Iain G. Thayne, Chong, Harold M H, Thayne, Iain G, Martin Holland, Hwang, Chi-Jeon, Khaled Elgaid, Harold M. H. Chong, Chong, Harold, Chong, H.M.H.   +18 more
core   +1 more source

Improving the High-Temperature Gate Bias Instabilities by a Low Thermal Budget Gate-First Process in p-GaN Gate HEMTs

Micromachines, 2023
In this study, we report a low ohmic contact resistance process on a 650 V E-mode p-GaN gate HEMT structure. An amorphous silicon (a-Si) assisted layer was inserted in between the ohmic contact and GaN.
Catherine Langpoklakpam, An-Chen Liu, Neng-Jie You, Ming-Hsuan Kao, Wen-Hsien Huang, Chang-Hong Shen, Jerry Tzou, Hao-Chung Kuo, Jia-Min Shieh   +8 more
doaj   +1 more source

Design and investigation of dual dielectric recessed-gate AlGaN/GaN HEMT as gas sensor application [PDF]

, 2022
This paper presents a highly sensitive Recessed Gate/source/drain AlGaN/GaN HEMT (RG-AlGaN/GaN HEMT) based Carbon Monoxide gas sensors. Many types of Carbon Monoxide (CO) gas sensor have already been demonstrated experimentally.
Sharma, Rajneesh, Kumar, Naveen, Chattopadhyay, Soumya Prasanna, Raman, Ashish, Kakkar, Deepti, Ranjan, Ravi   +5 more
core   +1 more source

P-GaN Gate HEMTs: A Solution to Improve the High-Temperature Gate Lifetime

IEEE Electron Device Letters
In this letter, we report an approach to improve the forward bias gate reliability of Schottky gate p-GaN HEMTs. In particular, a gate layout solution, namely Gate Within Active Area (GWA), aimed at improving the high-temperature time to failure (TTF), is proposed and validated. This solution allows to avoid the exposure of the gate finger (p-GaN/metal)
A. N. Tallarico, M. Millesimo, M. Borga, B. Bakeroot, N. Posthuma, T. Cosnier, S. Decoutere, E. Sangiorgi, C. Fiegna   +8 more
openaire   +2 more sources