Results 41 to 50 of about 25,827,177 (224)

Characterization in Schottky-Type p-GaN Gate Power HEMT

, 2021
A multi-functional bootstrap voltage clamping circuit is proposed for characterizing the drain-bias-induced dynamic VTH, in which the GaN HEMT serves as the key bootstrapping device.
Zheng, Zheyang, Junting Chen, Song Yang, Xu, Han, Yang, Song, Kailun Zhong, Kevin J. Chen, Zheyang Zheng, Chen, Kevin J., Zhong, Kailun, Han Xu, Chen, Junting   +11 more
core   +1 more source

The Evolution of Manufacturing Technology for GaN Electronic Devices

Micromachines, 2021
GaN has been widely used to develop devices for high-power and high-frequency applications owing to its higher breakdown voltage and high electron saturation velocity.
An-Chen Liu, Po-Tsung Tu, Catherine Langpoklakpam, Yu-Wen Huang, Ya-Ting Chang, An-Jye Tzou, Lung-Hsing Hsu, Chun-Hsiung Lin, Hao-Chung Kuo, Edward Yi Chang   +9 more
doaj   +1 more source

Resonant driving scheme for p-doped gallium nitride high electron mobility transistor to reduce driving power loss

Energy Reports, 2023
In high-frequency power electronics applications, gallium nitride high electron mobility transistors (GaN HEMTs) can switch at frequencies of several megahertz.
Zhixuan Wang, Xiangdong Sun, Biying Ren, Zechi Chen   +3 more
doaj   +1 more source

Improving the High-Temperature Gate Bias Instabilities by a Low Thermal Budget Gate-First Process in p-GaN Gate HEMTs

Micromachines, 2023
In this study, we report a low ohmic contact resistance process on a 650 V E-mode p-GaN gate HEMT structure. An amorphous silicon (a-Si) assisted layer was inserted in between the ohmic contact and GaN.
Catherine Langpoklakpam, An-Chen Liu, Neng-Jie You, Ming-Hsuan Kao, Wen-Hsien Huang, Chang-Hong Shen, Jerry Tzou, Hao-Chung Kuo, Jia-Min Shieh   +8 more
doaj   +1 more source

P-GaN Gate HEMTs: A Solution to Improve the High-Temperature Gate Lifetime

IEEE Electron Device Letters
In this letter, we report an approach to improve the forward bias gate reliability of Schottky gate p-GaN HEMTs. In particular, a gate layout solution, namely Gate Within Active Area (GWA), aimed at improving the high-temperature time to failure (TTF), is proposed and validated. This solution allows to avoid the exposure of the gate finger (p-GaN/metal)
A. N. Tallarico, M. Millesimo, M. Borga, B. Bakeroot, N. Posthuma, T. Cosnier, S. Decoutere, E. Sangiorgi, C. Fiegna   +8 more
openaire   +2 more sources

Unstable behaviour of normally-off GaN E-HEMT under short-circuit [PDF]

, 2023
The short-circuit capability of power switching devices plays an important role in fault detection and the protection of power circuits. In this work, an experimental study on the short-circuit (SC) capability of commercial 600 V Gallium Nitride ...
Maset Sancho, Enrique, Ferreres Sabater, Agustín, Esteve Gómez, Vicente, Ejea Martí, Juan Bautista, Sanchis Kilders, Esteban, Martínez, Pedro J., Jordán Martínez, José, Gilabert Palmer, David   +7 more
core   +1 more source

Suppression of hot electron effect in AlGaN/GaN HEMT with multi-grooves barrier-etched structure

Materials Research Express, 2023
A multi-grooves barrier-etched structure between barrier layer and passivation layer is proposed in this paper to suppress the hot electron effect at the gate edge on the drain side in the p-GaN gate AlGaN/GaN high-electron-mobility transistor.
Xuanlin Li, Jie Xu, Weijing Liu
doaj   +1 more source

Implications of Various Charge Sources in AlGaN/GaN Epi-Stack on the Drain & Gate Connected Field Plate Design in HEMTs

IEEE Access, 2022
We have established that a design strategy for drain and gate connected field plates should be adopted while keeping in mind the interplay of various charge sources across AlGaN/GaN epi-stack, which governs the electric field distribution across HEMT ...
Ankit Soni, Mayank Shrivastava
doaj   +1 more source

E-Mode p-n Junction/AlGaN/GaN (PNJ) HEMTs

, 2020
In this work, we demonstrate a GaN-based p-n junction gate (PNJ) HEMT featuring an n-GaN/ p-GaN/AlGaN/GaN gate stack. Compared to the more conventional p-GaN gate HEMT with a Schottky junction between the gate metal and p-GaN layer, the p-n junction can ...
Wang, Chengcai, Zheng, Zheyang, Yang, Song, Wei, Jin, Zhang, Li, Chen, Kevin J., Hua, Mengyuan, Chen, Junting   +7 more
core   +1 more source

Design Optimization of a New Nanostructured P-GaN Gate for Normally-off GaN HEMTs

, 2022
Best Paper AwardInternational audienceA new AlGaN/GaN heterostructure is proposed to achieve a normally-off behavior for GaN HEMTs. It relies on multiple P-GaN wells epitaxial regrowth along the gate.
Patrick Austin, Frederic Morancho, Chaymaa Haloui, Morancho, Frédéric, Daniel Rouly, Austin, Patrick, Karine Isoird, Josiane Tasselli, Rouly, Daniel, Tasselli, Josiane, Haloui, Chaymaa, Isoird, Karine   +11 more
core   +1 more source