Results 61 to 70 of about 2,431 (179)

Gate-Bias Induced R_ON Instability in p-GaN Power HEMTs

IEEE Electron Device Letters, 2023
In this letter, we investigate the on-resistance ( RON ) instability in p-GaN power HEMTs induced by a positive or negative gate bias ( VGB ), following the application of a quasi-static initialization voltage ( VGP ) of opposite sign. The transient behavior of this instability was characterized at different temperatures in the 90–135 °C range.
Chini, Alessandro, Zagni, Nicolo', Verzellesi, Giovanni, Cioni, Marcello, Giorgino, Giovanni, Nicotra, Maria Concetta, Castagna, Maria Eloisa, Iucolano, Ferdinando   +7 more
openaire   +2 more sources

When self-consistency makes a difference [PDF]

, 2008
Compound semiconductor power RF and microwave device modeling requires, in many cases, the use of selfconsistent electrothermal equivalent circuits.
Bonani, Fabrizio, Cappelluti, Federica, Camarchia, Vittorio, Ghione, Giovanni, Donati Guerrieri, Simona, Pirola, Marco   +5 more
core   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, Volume 36, Issue 41, 21 May 2026.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

Total ionizing dose effect of enhanced AlGaN/GaN HEMT devices under different bias

He jishu, 2023
BackgroundGallium nitride (GaN) power devices have garnered attention in the anti-irradiation field owing to their excellent performance.PurposeThis study aims to explore the anti-γ-ray damage ability of gallium nitride power devices and clarify the ...
QIU Yiwu, GUO Fengqi, YIN Yanan, ZHANG Pingwei, ZHOU Xinjie   +4 more
doaj   +1 more source

A High Performance AlGaN/GaN HEMT with a New Method for T-Gate Layout Design [PDF]

, 2008
We propose and fabricate an A1GaN/GaN high electron mobility transistor （HEMT） on sapphire substrate using a new kind of electron beam （EB） lithography layout for the T-gate.
Chen Zhigang, Zhang Renping, Yang Fuhua, Li Jinmin, Luo Weijun, Wang Xiaoliang, Zhang Yang   +6 more
core  

Two‐Dimensional Piezoelectric Nanomaterials for Nanoelectronics and Energy Harvesting

ENERGY &ENVIRONMENTAL MATERIALS, Volume 9, Issue 3, May 2026.
Two‐Dimensional Piezoelectric Nanomaterials from properties to applications. Smart materials, especially piezoelectric materials, have gained popularity over the last two decades. Two‐dimensional (2D) piezoelectric materials exhibit attributes including great flexibility, ease of workability, extensive surface area, and many active sites, indicating ...
Yujun Cao, Sikandar Aftab, Zeeshan Ali, Muhammad Farooq Khan, Ghazanfar Nazir, Awais Khalid, Hosameldin Helmy Hegazy, Ibrahim S. Yahia, Altaf Hussain Rajpar, Burragoni Sravanthi Goud, Jae Hong Kim, Erdi Akman, Xin Li   +12 more
wiley   +1 more source

High Power Added Efficiency Enhancement-Mode Γ-Gate RF HEMT With High/Low p-GaN Doping Profile

IEEE Journal of the Electron Devices Society
$0.5~\mu $ m enhancement-mode (E-mode) p-GaN $\Gamma $ -gate RF HEMT with engineered Mg doping profile in p-GaN layer was studied for high power amplifier application.
Hsien-Chin Chiu, Chong-Rong Huang, Chia-Han Lin, Chia-Hao Yu, Hsuan-Ling Kao, Shinn-Yn Lin, Barry Lin   +6 more
doaj   +1 more source

On the operating speed and energy efficiency of GaN-based monolithic complementary logic circuits for integrated power conversion systems

Fundamental Research, 2021
Gallium nitride (GaN)-based power conversion systems exhibit striking competitiveness in realizing compact and high-efficiency power management modules.
Zheyang Zheng, Han Xu, Li Zhang, Kevin J. Chen   +3 more
doaj   +1 more source

Kilo‐Volt Class Al0.65Ga0.35N Channel Metal Insulator Semiconductor HEMTs With >300MW/cm2 Baliga Figure of Merit on Sapphire Substrate

physica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 5, May 2026.
Passivated Al‐rich AlGaN channel metal insulator semiconductor HEMTs on sapphire demonstrate breakdown voltages exceeding 2 kV with average electric fields above 1.3 MV/cm. A peak Baliga figure of merit of 325 MW/cm2 is achieved, representing a significant improvement over prior reports.
Khush Gohel, Swarnav Mukhopadhyay, Md Tahmidul Alam, Jiahao Chen, Surjava Sanyal, Ruixin Bai, Guangying Wang, Shubhra Pasayat, Chirag Gupta   +8 more
wiley   +1 more source

Quasi-Normally-Off AlGaN/GaN HEMTs With SiNₓ Stress Liner and Comb Gate for Power Electronics Applications

IEEE Journal of the Electron Devices Society, 2020
Recess processes for the fabrication of normally-off GaN HEMTs generally compromise devices’ on-state performance. In this work, recess-free quasi-normally-off GaN HEMTs with a threshold voltage of 0.24 V is realized by local control of two ...
Wei-Chih Cheng, Fanming Zeng, Minghao He, Qing Wang, Mansun Chan, Hongyu Yu   +5 more
doaj   +1 more source